주제어 |
$n_2$
|
1
|
1
|
|
amorphous structure
|
3
|
3
|
|
prolong annealing treatment
|
1
|
1
|
|
totalinterfacialtrapstate
|
1
|
1
|
|
wet annealing
|
1
|
1
|
|
szto tft
|
2
|
1
|
|
amorphous oxide semiconductor
|
3
|
1
|
|
source and drain electrode
|
3
|
1
|
|
sputteringpower
|
3
|
1
|
|
thin film transistor (tft)
|
5
|
1
|
|
wet
|
5
|
1
|
|
ag thickness
|
6
|
1
|
|
rf magnetron sputtering
|
58
|
4
|
|
transistor
|
16
|
1
|
|
a-igzo
|
17
|
1
|
|
oxide tft
|
24
|
1
|
|
azo
|
25
|
1
|
|
transparent conductive oxide
|
26
|
1
|
|
oxygen vacancy
|
28
|
1
|
|
zto
|
29
|
1
|
|
oxide
|
30
|
1
|
|
contact resistance
|
37
|
1
|
|
thin film transistor
|
40
|
1
|
|
vacuum
|
46
|
1
|
|
roughness
|
47
|
1
|
|
solution process
|
57
|
1
|
|
afm
|
60
|
1
|
|
igzo
|
64
|
1
|
|
activation energy
|
67
|
1
|
|
annealing
|
76
|
1
|
|
xps
|
96
|
1
|
|
xrd
|
159
|
1
|
|
zno
|
236
|
1
|
|
stability
|
484
|
1
|
|
계 |
|
1,756 |
39 |
|
* 주제로 분류 되지 않은 논문건수 |
|
0 |
|