The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor

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' The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • oxide
  • solution process
  • thin film transistor (tft)
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
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' The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor' 의 참고문헌

  • Theoretical analysis of IGZO transparent amorphous oxide semiconductor
    M. Takahashi Proc. 15th Int. Display Workshop : 1637 ~ 1640 [2008]
  • Simultaneous modification of pyrolysis and densification for low-temperature solutionprocessed flexible oxide thin-film transistors
    You Seung Rim Journal of Materials Chemistry 22 (25) : 12491 ~ [2012]
  • Room-temperature ferromagnetic Co-doped ZnO nanoneedle array prepared by pulsed laser deposition
    J. J. Chen Applied Physics Letters 87 (17) : 173119 ~ [2005]
  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    Kenji Nomura Nature 432 (7016) : 488 ~ 492 [2004]
  • Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
    Himchan Oh Applied Physics Letters 97 (18) : 183502 ~ [2010]
  • O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
    Byungki Ryu Applied Physics Letters 97 (2) : 022108 ~ [2010]
  • Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
    Myung-Gil Kim Nature Materials 10 (5) : 382 ~ 388 [2011]
  • High-performance flexible zinc tin oxide field-effect transistors
    W. B. Jackson Applied Physics Letters 87 (19) : 193503 ~ [2005]
  • Electrochem. Solid-State Lett 15 : H78 ~
    H. S. Lim [2012]
  • Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
    Ho Yong Chong Applied Physics Letters 99 (16) : 161908 ~ [2011]
  • Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors
    Yuri Choi Applied Physics Letters 97 (16) : 162102 ~ [2010]
  • Appl. Phys. Lett 98 : 232102 ~
    J. H. Kim [2011]
  • Appl. Phys. Lett 91 : 113505 ~
    J. K. Jeong [2007]
  • A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors
    D.-H. Lee Advanced Materials 19 (6) : 843 ~ 847 [2007]