연구동향 분석

Effect of Annealing Time on Electrical Performance of SiZnSnO Thin Film Transistor Fabricated by RF Magnetron Sputtering

Ko, Kyung-Min Lee, Sang Yeol 2015년

논문상세정보
인용/피인용
' Effect of Annealing Time on Electrical Performance of SiZnSnO Thin Film Transistor Fabricated by RF Magnetron Sputtering' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • amorphous structure
  • contact resistance
  • prolong annealing treatment
  • rf magnetron sputtering
  • roughness
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
141 0

0.0%

' Effect of Annealing Time on Electrical Performance of SiZnSnO Thin Film Transistor Fabricated by RF Magnetron Sputtering' 의 참고문헌

  • [DOI : http : //dx. doi. org/10. 1063/1
  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
    Toshio Kamiya Journal of Display Technology 5 (12) : 468 ~ 483 [2009]
  • Obtaining the specific contact resistance from transmission line model measurements
    G.K. Reeves IEEE Electron Device Letters 3 (5) : 111 ~ 113 [1982]
  • Investigation on the Temperature Dependence of the Performance of Solution Processed Si–Zn–Sn Oxide Thin Film Transistor
    Jun Young Choi Journal of Nanoscience and Nanotechnology 13 (10) : 7089 ~ 7091 [2013]
  • Grain size effects on contact resistance of top-contact pentacene TFTs
    Sung Hun Jin Synthetic Metals 156 (2-4) : 196 ~ 201 [2006]
  • First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability
    Eugene Chong Thin Solid Films 534 : 609 ~ 613 [2013]
  • Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model
    Toshio Kamiya Journal of Display Technology 5 (12) : 462 ~ 467 [2009]
  • Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films
    Ling Li Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (2) : 021506 ~ [2014]
  • Effect of oxygen on the threshold voltage of a-IGZO TFT
    Eugene Chong Journal of Electrical Engineering and Technology 6 (4) : 539 ~ 542 [2011]
  • Effect of Wet Annealing on the Device Stability of SiZnSnO Thin Film Transistors
    Hyoungseok Choi Journal of Nanoelectronics and Optoelectronics 9 (1) : 54 ~ 56 [2014]
  • Current Appl. Phys. 12 : S12 ~
    I. Kang [2012]