연구동향 분석

Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method

Lee, Sang Yeol 2015년

논문상세정보
인용/피인용
' Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • a-igzo
  • amorphous oxide semiconductor
  • source and drain electrode
  • transparent conductive oxide
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
49 0

0.0%

' Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method' 의 참고문헌

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
    K. Nomura Science 300 (5623) : 1269 ~ 1272 [2003]
  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
    Kenji Nomura Applied Physics Letters 92 (20) : 202117 ~ [2008]
  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    Kenji Nomura Nature 432 (7016) : 488 ~ 492 [2004]
  • Role of silicon in silicon-indium-zinc-oxide thin-film transistor
    Eugene Chong Applied Physics Letters 97 (25) : 252112 ~ [2010]
  • Novel ZrInZnO Thin-film Transistor with Excellent Stability
    Jin-Seong Park Advanced Materials 21 (3) : 329 ~ 333 [2009]
  • Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
    Kichan Jeon Applied Physics Letters 93 (18) : 182102 ~ [2008]
  • Investigating the stability of zinc oxide thin film transistors
    R. B. M. Cross Applied Physics Letters 89 (26) : 263513 ~ [2006]
  • Highly Transparent and Conductive Al-Doped ZnO/Ag/Al-Doped ZnO Multilayer Source/Drain Electrodes for Transparent Oxide Thin Film Transistors
    Kwang-Hyuk Choi Electrochemical and Solid-State Letters 14 (4) : H152 ~ [2011]
  • Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
    Pedro Barquinha IEEE Transactions on Electron Devices 55 (4) : 954 ~ 960 [2008]
  • A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization
    Sunghwan Lee Journal of Applied Physics 109 (6) : 063702 ~ [2011]