| 주제분류(KDC/DDC) |
응용 물리
|
4,649
|
13
|
|
| 주제어 |
Amorphous SiInZnO
|
1
|
1
|
|
|
Carrier diffusion
|
1
|
1
|
|
|
DC bias stress
|
1
|
1
|
|
|
Negative bias temperature str ...
|
1
|
1
|
|
|
Novel structure
|
1
|
1
|
|
|
Oxide based semiconductor
|
1
|
1
|
|
|
SZTO
|
1
|
1
|
|
|
Window wiper
|
1
|
1
|
|
|
X-ray diffraction spectroscop ...
|
1
|
1
|
|
|
Zn doped $In_2O_3$
|
1
|
1
|
|
|
a-SiInZnO
|
1
|
1
|
|
|
Oxide based semiconductors
|
2
|
1
|
|
|
Si doped InO
|
2
|
1
|
|
|
SiZnSnO
|
2
|
1
|
|
|
a-InGaZnO
|
2
|
1
|
|
|
rad-supplementing module
|
2
|
1
|
|
|
siinzno
|
2
|
1
|
|
|
skew monoid ring
|
2
|
1
|
|
|
supplementing module
|
2
|
1
|
|
|
szto tft
|
2
|
1
|
|
|
ti/al electrodes
|
2
|
1
|
|
|
Amorphous oxide semiconductor
|
3
|
1
|
|
|
Transparent film
|
3
|
1
|
|
|
hallmeasurement
|
3
|
1
|
|
|
oxide-metal-oxide multilayer
|
3
|
1
|
|
|
solenoidactuator
|
3
|
1
|
|
|
source and drain electrode
|
3
|
1
|
|
|
transmission line method
|
3
|
1
|
|
|
Indium zinc oxide
|
4
|
1
|
|
|
perfect ring
|
4
|
1
|
|
|
omo
|
5
|
1
|
|
|
Electrical property
|
12
|
2
|
|
|
Thermal annealing
|
12
|
2
|
|
|
ag thickness
|
6
|
1
|
|
|
annealing temperature
|
14
|
2
|
|
|
Oxide semiconductor
|
22
|
3
|
|
|
transparent conductive oxide
|
26
|
2
|
|
|
a-igzo
|
17
|
1
|
|
|
thin-film transistor
|
36
|
2
|
|
|
variational methods
|
19
|
1
|
|
|
oxide tft
|
24
|
1
|
|
|
Electrical properties
|
25
|
1
|
|
|
Structural safety
|
32
|
1
|
|
|
Activation energy
|
33
|
1
|
|
|
contact resistance
|
33
|
1
|
|
|
Instability
|
37
|
1
|
|
|
ag
|
38
|
1
|
|
|
tft
|
38
|
1
|
|
|
multi-layer
|
71
|
1
|
|
|
x-ray diffraction
|
141
|
1
|
|
| 계 |
|
5,350 |
70 |
|
| * 주제로 분류 되지 않은 논문건수 |
|
0 |
|
