주제분류(KDC/DDC) |
결정학
|
263
|
10
|
|
주제어 |
$NaGd(MoO_4)_2$
|
1
|
1
|
|
Bulk GaN
|
1
|
1
|
|
GaN substrate
|
1
|
1
|
|
Hexagonal V-pit
|
1
|
1
|
|
Power electronic
|
1
|
1
|
|
Thermal annealing process
|
1
|
1
|
|
Two-photon process
|
1
|
1
|
|
far-infrared radiation cerami ...
|
1
|
1
|
|
Indium hydroxide
|
3
|
2
|
|
Crack-self-healing
|
2
|
1
|
|
Dislocation density
|
2
|
1
|
|
Rare earth ion
|
2
|
1
|
|
wet chemical etching
|
2
|
1
|
|
precipitationmethod
|
5
|
2
|
|
Defect density
|
3
|
1
|
|
industrialtrend
|
3
|
1
|
|
koh/naoh
|
3
|
1
|
|
sintering process
|
3
|
1
|
|
etchpit
|
4
|
1
|
|
Aluminum nitride
|
15
|
2
|
|
Hot press
|
9
|
1
|
|
Silicon oxide
|
9
|
1
|
|
hvpe
|
18
|
2
|
|
far-infrared ray
|
10
|
1
|
|
Chemical mechanical polishing
|
11
|
1
|
|
indium
|
14
|
1
|
|
wet etching
|
14
|
1
|
|
raw material
|
33
|
2
|
|
Phase-transition
|
27
|
1
|
|
upconversion
|
29
|
1
|
|
optical property
|
34
|
1
|
|
etching
|
41
|
1
|
|
ito
|
89
|
2
|
|
gan
|
119
|
2
|
|
Residual stress
|
75
|
1
|
|
ceramic
|
76
|
1
|
|
silicon carbide
|
81
|
1
|
|
Semiconductor
|
108
|
1
|
|
thickness
|
120
|
1
|
|
oxidation
|
177
|
1
|
|
계 |
|
1,412 |
57 |
|
* 주제로 분류 되지 않은 논문건수 |
|
0 |
|