논문상세정보
' Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 전자공학
  • alnthinfilm
  • piezoelectric
  • pressure sensor
  • rfreactivesputtering
  • roomtemperaturedeposition
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
2,423 0

0.0%

' Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature' 의 참고문헌

  • Studies of the growth method and properties of AlN grown by RF-MBE
    B. Liu Journal of the Korean Physical Society 52 : 17 ~ 19 [2008]
  • Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields
    J. B. Malherbe Crit. Rev. Sol. State. Mater. Sci. 19 (2) : 55 ~ 127 [1994]
  • Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
    C. Ozgit Thin Solid Films 520 : 2750 ~ 2755 [2012]
  • SAW 소자 응용을 위한 실리콘 기판 위에 AlN 박막의 최적 증착 조건에 관한 연구
    고봉철 센서학회지 16 (4) : 301 ~ 306 [2007]
  • RF 마그네트론 스퍼터링 공정 조건에 따른AlN 박막의 배향성, 표면 거칠기 및 압전 특성에 관한 연구
    방정호 전자공학회논문지 - SD 43 (4) : 1 ~ 7 [2006]
  • Properties of reactively dc-magnetron-sputtered AlN thin films
    E. Rille Thin Solid Films. 228 : 215 ~ [1993]
  • Preparation of highly orientated aluminum nitride thin films on polycrystalline substrates by helicon plasma sputtering and annealing
    M. Akiyama J. Amer. Cer. Soc. 84 : 1917 ~ 1920 [2001]
  • Preparation of highly orientated AlN thin films on glass substrates by helicon plasma sputtering and design of experiments
    M. Akiyama Thin Solid Films 350 : 85 ~ 90 [1999]
  • Preparation and application of highly orientated aluminum nitride thin film–ceramic skin
    M. Akiyama Bull. Ceram. Soc. Jpn. 39 : 696 ~ 699 [2004]
  • Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators
    H. P. Loebl Mater. Chem. Phys. 79 : 143 ~ [2003]
  • Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering
    X. H. Xu Thin Solid Films. 388 : 62 ~ 67 [2001]
  • Modifications of AlN thin films by ions
    N. Matsunami Nucl. Instru m. Methods B. 257 : 433 ~ 437 [2007]
  • Materials for high temperature acoustic and vibration sensors: a review
    R. C. Turner Appl. Acoust.. 41 : 299 ~ 324 [1994]
  • Frequency effects on the dielectric properties of AlN film deposited by radio frequency reactive magnetron sputtering
    X. Song Microelec. Eng. 86 : 2217 ~ 2221 [2009]
  • Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation
    R. Boichot Surf. Coat. Technol. 205 : 1294 ~ 1301 [2010]
  • Electrical properties of AlN thin films prepared by ion beam enhanced deposition
    Z. An Surf. Coat. Technol. 196 : 130 ~ 134 [2005]
  • Control of preferential orientation of AlN films prepared by the reactive sputtering method
    M. Ishihara Thin solid film. 316 : 152 ~ 157 [1998]
  • Annual report of Japanese ceramic industry 2002
    T. Sugimoto Ceramics Japan 38 : 686 ~ 693 [2003]