A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell

논문상세정보
' A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 전자공학
  • al2o3
  • anti-reflection coating
  • nh4oh
  • passivation layer
  • solar cell
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
2,538 0

0.0%

' A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell' 의 참고문헌

  • Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
    P. Saint-Cast Applied Physics Letters 95 (15) : 151502 ~ 151502-3 [2009]
  • Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwavedetected photoconductance decay
    A. W. Stephens Journal of Applied Physics 76 (1) : 363 ~ 370 [1994]
  • Surface passivation of high efficiency silicon solar cells by atomic-layer –deposited Al2O3
    J. Schmidt Progress in Photovoltaics: Research and Application 16 (6) : 461 ~ 466 [2008]
  • Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
    G. Dingemans Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4) : 040802 ~ 040802-27 [2012]
  • Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- κ Dielectrics
    Y. Xuan IEEE Transactions on Electron Devices 54 (8) : 1811 ~ 1817 [2007]
  • Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal-Oxide-Semiconductor Capacitor
    I. S. Jeon Japanese Journal of Applied physics 42 (3) : 1222 ~ 1226 [2003]
  • Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
    B. Shin Applied physics letters 96 (15) : 152908 ~ 152908-3 [2010]
  • Optimized Antireflection Coatings for High-Efficiency Silicon Solar Cells
    J. Zhao IEEE Transactions on Electron Devices 38 (8) : 1925 ~ 1934 [1991]
  • On the C-Si Surface passivation mechanism by the negative–chargedielectric Al2O3
    B. Hoex Jounal of Applied Physics 104 (11) : 113703 ~ 113703-7 [2008]
  • Native defects in Al2O3 and their impact on IIIV/Al2O3 metal-oxide-semiconductor-based devices
    J. R. Weber Journal of Applied Physics 109 (3) : 033715 ~ 033715-7 [2011]
  • MOS Physics and Technology
    E. H. Nicollian Wiley : 330 ~ 332 [1982]
  • Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
    G. Dingemans Electrochemical and Solid-State Letters 13 (3) : H76 ~ H79 [2009]
  • High-Efficiency c-Si Solar Cells Passivated Wigh ALD and PECVD Aluminum Oxide
    P. Saint-Cast IEEE Electron Device Letters 31 (7) : 695 ~ 697 [2010]
  • Electronic and chemical properties of the c-Si/Al2O3 interface
    F. Werner Journal of Applied Physics 109 (11) : 113701 ~ 113701-6 [2011]
  • Effect of Hydrogen Treatment on Electrical Properties of Hafnium Oxide for Gate Dielectric Application
    K. J. Choi Journal of Semiconductor Technology and Science 1 (2) : 95 ~ 102 [2001]
  • Device Characteristics of AlGaN/GaN MIS-HFET using Al2O3 Based High-k Dielectric
    K. Y. Park Journal of Semiconductor Technology and Science 5 (2) : 107 ~ 112 [2005]
  • Al2O3 Films Prepared by Electron-Beam Evaporation of Hot-Pressed Al2O3 in Oxygen Ambient
    D. Hoffman Journal of Vacuum Science & Technology 8 (1) : 107 ~ 111 [1971]