EFG 방법으로 성장한 β-Ga2O3 단결정의 영역별 품질 분석

논문상세정보
' EFG 방법으로 성장한 β-Ga2O3 단결정의 영역별 품질 분석' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • EFG method
  • Single crystal growth
  • galliumoxide
  • β-Gallium oxide
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
27 0

0.0%

' EFG 방법으로 성장한 β-Ga2O3 단결정의 영역별 품질 분석' 의 참고문헌

  • Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
    T. Onuma [2015]
  • Ultrawide‐bandgap semiconductors: research opportunities and challenges
    J.Y. Tsao [2018]
  • Review of Ga2O3-based optoelectronic devices
    D. Guo [2019]
  • Raman spectra and valence force field of single-crystalline β- Ga2O3
    D. Dohy [1982]
  • Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method
    K. Zhang [2021]
  • Polymorphism of Ga2O3 and the system Ga2O3-H2O
    R. Roy [1952]
  • Guest Editorial: The dawn of gallium oxide microelectronics
  • Growth of β-Ga2O3 s ingle crystals by the edge-defined, film fed growth method
    H. Aida [2008]
  • Development of gallium oxide power devices
  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β -Ga2O3 (010) substrates and temperature dependence of their device characteristics