연구동향 분석

깊은 준위 결함에 의한 SiC SBD 전기적 특성에 대한 영향 분석

이건희 변동욱 신명철 구상모 2022년

논문상세정보
인용/피인용
' 깊은 준위 결함에 의한 SiC SBD 전기적 특성에 대한 영향 분석' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • Defect
  • Recombination
  • Sentaurus TCAD
  • Trap concentration
  • Z1/2
  • sic
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
187 0

0.0%

' 깊은 준위 결함에 의한 SiC SBD 전기적 특성에 대한 영향 분석' 의 참고문헌

  • TCAD device modelling and simulation of wide bandgap power semiconductors
    Lophitis. N [2018]
  • Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET
  • Sentaurus Device User, Version. L
  • Review of Silicon Carbide Power Devices and Their Applications
    Xu She [2017]
  • Recombination processes controlling the carrier lifetime in n−4H–SiC epilayers with low Z1/2 concentrations
    P. B. Klein [2010]
  • Optical Characterization of Deep Level Defects in SiC
  • Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
  • Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
    I. Pintilie [2002]
  • Development of SiC power devices and modules for automotive motor drive use
  • Deep levels by proton and electron irradiation in 4H–SiC
  • Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
  • Deep level defects in electron-irradiated 4H SiC epitaxial layers
  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
    T. Dalibor [1997]
  • Current SiC technology for power electronic devices beyond Si
  • Comparison of 6H-SiC, 3C-SiC, and Si for power devices