연구동향 분석

3.3kV 항복 전압을 갖는 저저항 SC-SJ(Shielding

김정훈 김광수 2019년

논문상세정보
인용/피인용
' 3.3kV 항복 전압을 갖는 저저항 SC-SJ(Shielding' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 4h-sic
  • Trench mosfet
  • breakdown voltage
  • electric field
  • super junction
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
116 0

0.0%

' 3.3kV 항복 전압을 갖는 저저항 SC-SJ(Shielding' 의 참고문헌

  • The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs
  • The Trench Power MOSFET: Part I—History, Technology, and Prospects
  • Superjunction Power Devices, History, Development, and Future Prospects
  • Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss
    X. Li [2018]
  • Reliability and stability of SiC power MOSFETs and next-generation SiC MOSFETs
    B. Hull [2014]
  • Power semiconductor device figure of merit for high-frequency applications
    B.J. Baliga [1989]
  • Fundamentals of Power Semiconductor Devices
  • Design and fabrication of a 3.3kV 4H-SiC MOSFET
  • Concept and design of super junction devices
    Bo Zhang [2018]
  • A comparative study of a deep-trench superjunction SiC VDMOS device
  • 3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab
    B. Powell [2018]