연구동향 분석

3.3kV급 저저항 4H-SiC Semi-SJ MOSFET

천진희 김광수 2019년

논문상세정보
인용/피인용
' 3.3kV급 저저항 4H-SiC Semi-SJ MOSFET' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 4h-sic
  • breakdown voltage
  • on resistance
  • semi-superjunction
  • super junction
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
102 0

0.0%

' 3.3kV급 저저항 4H-SiC Semi-SJ MOSFET' 의 참고문헌

  • Superjunction Power Devices, History, Development, and Future Prospects
  • Silicon carbide power devices
  • Power semiconductor device figure of merit for high-frequency applications
    B.J. Baliga [1989]
  • Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices
  • Fundamentals of power semiconductor devices
  • Concept and design of super junction devices
    Bo Zhang [2018]
  • Advanced power MOSFET concepts
  • A semi-superjunction MOSFET with P-type Bottom Assist Layer
  • A comparative study of a deep-trench superjunction SiC VDMOS device
  • A 1-kV 4H-SiC Power DMOSFET Optimized for Low on-Resistance
    Asmita Saha [2007]
  • 14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)