온도 및 조성비 변화에 따른 질화물계 화합물 반도체 GaAs1-xNx의 에너지 밴드갭과 광학상수 계산
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저자
정호용
김대익
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제어번호
105981402
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학술지명
한국전자통신학회 논문지
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권호사항
Vol.
13
No.
6
[
2018
]
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발행처
한국전자통신학회
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자료유형
학술저널
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수록면
1213-1222
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언어
Korean
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출판년도
2018
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등재정보
KCI등재
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소장기관
전남대학교 여수캠퍼스 도서관
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판매처
'
온도 및 조성비 변화에 따른 질화물계 화합물 반도체 GaAs1-xNx의 에너지 밴드갭과 광학상수 계산' 의 참고문헌
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질화물계 화합물 반도체 GaAs{1-x}N{x}의 Bowing Parameter 및 에너지 밴드갭 계산
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Variation of refractive index with energy gap in semiconductors
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The factors contributing to the band gap bowing of the dilute nitride GaNP alloy
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The evolution of the band gap energy of the P-rich (0≤x≤0.05) on composition and temperature
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The anomalous bandgap bowing in GaAsN
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Temperature dependence of the energy gap in semiconductors
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Temperature and Composition Dependence of ( 0<x≤0.05) before and after Annealing
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Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
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Refractive index and dielectric constants of GaxIn1-xP: Disorder effect
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Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
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Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys
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Photoluminescence excitonic linewidth in GaAsN alloys
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Optical characterization of MBE-grown GaNAs
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Experimental investigation of the matrix element in the band anticrossing model for GaAsN and GaInAsN layers
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Energy gap–refractive index relations in semiconductors-an overview
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Energy Band Structures of Graded Gap Superlattices and Quaternary Compound Semiconductors
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Electronic structure and related properties for quasi-binary (GaP)1−x (ZnSe)x crystals
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Electronic and structural properties of zincblende
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Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics
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Dependence of electronic properties on nitrogen concentration in dilute alloys
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Composition and Temperature Dependence of the Direct Band Gap of (0≤x≤0.0232) Using Contactless Electroreflectance
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Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy
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Band structure and optical constants of
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Band parameters for III-V compound semiconductors and their alloys
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Band Structure, Charge Distribution and Optical Properties of Ternary Semiconductor Alloys
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Alloy composition and optoelectronic properties of dilute by pseudo-potential calculations
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온도 및 조성비 변화에 따른 질화물계 화합물 반도체 GaAs1-xNx의 에너지 밴드갭과 광학상수 계산'
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