연구동향 분석

Correlation between pit formation and phase separation in thick InGaN film on a Si substrate

우현석 조용철 김종민 조상은 노정현 이준호 김형상 한철구 임현식 2018년

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' Correlation between pit formation and phase separation in thick InGaN film on a Si substrate' 의 참고문헌

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    Y. -H. Cho [1998]
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    Y. Narukawa [1997]
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    F. Bertram [2002]
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    Y. S. Park [2004]
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    C. A. Tran [1998]
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    E. -L. Lai [2006]
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    P. Mishra [2016]
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    M. Moseley [2012]
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    A. Lotsari [2012]
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    S. Chichibu [1997]
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    T. Kimura [2011]
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    S. Nakamura [2000]
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    Th Kehagias [2009]
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    A. Yamamoto [2015]
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    I. -K. Park [2005]
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    우현석 [2015]
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    S. Y. Woo [2015]
  • A comparison of Rutherford Backscattering spectroscopy and X‐ray diffraction to determine the composition of thick InGaN epilayers