Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer
활용도 Analysis
논문 Analysis
연구자 Analysis
저자
Tao Yin
Tosiro Doi
구로가와슈헤이
Zhao zhong Zhou
Kai ping Feng
제어번호
105949392
학술지명
International Journal of Precision Engineering and Manufacturing
권호사항
Vol.
19
No.
12
[
2018
]
발행처
한국정밀공학회
자료유형
학술저널
수록면
1773-1780
언어
English
출판년도
2018
등재정보
KCI등재
소장기관
영남대학교 과학도서관
판매처
'
Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer' 의 참고문헌
Wide Band-Gap Power Semiconductor Devices
Ultraprecision CMP for Sapphire, GaN, and SiC for Advanced Optoelectronics Materials
The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer
The Critical Issues of SiC Materials for Future Nuclear Systems
Surface and Interface Issues in Wide Band Gap Semiconductor Electronics
Study on the Development of Resource-Saving High Performance Slurry-Polishing/CMP for Glass Substrates in a Radical Polishing Environment, Using Manganese Oxide Slurry as an Alternative for Ceria Slurry
Some Critical Materials and Processing Issues in SiC Power Devices
Role of Ionic Strength in Chemical Mechanical Polishing of Silicon Carbide Using Silica Slurries
Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate
Recent Advances on Dielectrics Technology for SiC and GaN Power Devices
Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling
Influence of SiC Surface Defects on Materials Removal in Atmospheric Pressure Plasma Polishing
Hybrid Polishing Mechanism of Single Crystal SiC Using Mixed Abrasive Slurry (MAS)
Emerging Trends in Wide Band Gap Semiconductors (SiC and GaN) Technology for Power Devices
Electro-Chemical Mechanical Polishing of Single-Crystal SiC Using CeO2 Slurry
Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC (0001)
Effect of Particle Size of Chemical Mechanical Polishing Slurries for Enhanced Polishing with Minimal Defects
Effect of Fenton-Kind Process in Silicon Carbon Polishing
Defect-Free Planarization of 4H–SiC (0001) Substrate Using Reference Plate
Chemical Mechanical Polishing (CMP) of On-Axis Si-Face 6H-SiC Wafer for Obtaining Atomically Flat Defect-Free Surface
Characteristics in SiC-CMP using MnO2 Slurry with Strong Oxidant under Different Atmospheric Conditions
Approach to High Efficient CMP for Power Device Substrates
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Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer'
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