Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer

논문상세정보
    • 저자 Tao Yin Tosiro Doi 구로가와슈헤이 Zhao zhong Zhou Kai ping Feng
    • 제어번호 105949392
    • 학술지명 International Journal of Precision Engineering and Manufacturing
    • 권호사항 Vol. 19 No. 12 [ 2018 ]
    • 발행처 한국정밀공학회
    • 자료유형 학술저널
    • 수록면 1773-1780
    • 언어 English
    • 출판년도 2018
    • 등재정보 KCI등재
    • 소장기관 영남대학교 과학도서관
    • 판매처
    유사주제 논문( 0)

' Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer' 의 참고문헌

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  • The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer
    Yin, T. [2012]
  • The Critical Issues of SiC Materials for Future Nuclear Systems
    Li, M. [2018]
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  • Approach to High Efficient CMP for Power Device Substrates