Atomic layer deposited ZrxAl1-xOy film as high κ gate insulator for high performance ZnSnO thin film transistor

논문상세정보

' Atomic layer deposited ZrxAl1-xOy film as high κ gate insulator for high performance ZnSnO thin film transistor' 의 참고문헌

  • The deterioration of a-IGZO TFTs owing to the copper diff usion after the process of the source/drain metal formation
    Tai, Y.H. [2012]
  • Temperature-dependent transfer characteristics of amorphous InGaZnO 4 thin-film transistors
    Takechi, K [2009]
  • Surface-scattering eff ects in polycrystalline silicon thin-film transistors
    Valletta, A [2003]
  • Surface chemistry of atomic layer deposition, a case study for the trimethylaluminum/water process
  • Suppression of crystallization of tantalum oxide thin film by doping with zirconium
    Tewg, J.Y [2005]
  • Suppression in the negative bias illumination instability of ZnSnO thin-film transistors using hafnium doping by dual-target magnetron cosputtering system
    Huang, C.X [2016]
  • Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis
    Kim, U.K. [2013]
  • Structural evolution and defect control of yttrium-doped ZrO 2films grown by a sol–gel method
    Jeonga, K.S [2014]
  • Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors
    Yang, W [2013]
  • Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors
    Nomura, K. [2004]
  • Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field eff ect transistor
  • Role of Si as carrier suppressor in amorphous Zn–Sn–O
    Kang, I [2012]
  • Realization of solution-processed semiconducting single-walled carbon nanotubes thin film transistors with atomic layer deposited ZrAlO x gate insulator
    Huang, C.X [2017]
  • Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
    Oh, H [2010]
  • Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications
    Ha, T.J. [2013]
  • Performance enhancement in InZnO thin-film transistors with compounded ZrO 2 –Al 2 O 3 nanolaminate as gate insulators
    Zhang, J.H [2016]
  • Oxygen vacancies in ZnO
    Janotti, A [2005]
  • Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature
    Rim, Y.S [2014]
  • Low-temperature solution-processed ZrO 2 gate insulators for thin-film transistors using high-pressure annealing
    Kim, S.J [2011]
  • Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
  • Investigation of the eff ects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors
    Kim, G.H. [2010]
  • Investigation of co-sputtered LiZnSnO thin film transistors
    Jung, H.Y [2012]
  • Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors
    Ryu, M.K [2009]
  • High-κ gate dielectrics, current status and materials properties considerations
    Wilk, G.D [2001]
  • High performance, low temperature solution-processed barium and strontium doped oxide thin film transistors
    Banger, K.K [2014]
  • Electronic structure of the amorphous oxide semiconductor a-InGaZnO 4 –x, Tauc–Lorentz optical model and origins of subgap states
    Kamiya, T [2009]
  • Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors
    Sahoo, A.K [2016]
  • Effect of strontium addition on stability of Zinc–Tin–Oxide thinfi lm transistors fabricated by solution process
    Kim, Y.G [2014]
  • Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors
    Huang, C.X [2015]
  • Effect of Zr addition on ZnSnO thin-film transistors using a solution process
    Rim, Y.S [2010]
  • Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors
    Jeon, H.J [2014]
  • Dan, low-doping eff ects of nanostructure ZnO,Sn tin films annealed at diff erent temperature in nitrogen ambient to be applied as an anti-refl ecting coating
    Abdullah, H [2010]
  • Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films
    Seo, H [2010]
  • Characterization of intrinsic and impurity deep levels in ZnSe and ZnO crystals by nonlinear spectroscopy
  • Characterization of dual-target co-sputtered novel Hf-doped ZnSnO semiconductors and the enhanced stability of its associated thin film transistors
    Huang, C.X [2016]
  • Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors
    Lee, W.J [2007]
  • Characteristics of Al 2 O 3 /ZrO 2 laminated films deposited by ozone-based atomic layer deposition for organic device encapsulation
    Oh, J [2016]
  • Carrier transport and density of state distributions in pentacene transistors
    Volkel, A.R [2002]
  • Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors
    Huang, C.X [2017]
  • A study on H 2 plasma treatment eff ect on a-IGZO thin film transistor
    Kim, J. [2012]