Specific contact resistance of IGZO thin film transistors with metallic and transparent conductive oxides electrodes and XPS study of the contact/semiconductor interfaces
활용도 Analysis
논문 Analysis
연구자 Analysis
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Specific contact resistance of IGZO thin film transistors with metallic and transparent conductive oxides electrodes and XPS study of the contact/semiconductor interfaces' 의 참고문헌
Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering
The physics of amorphous-silicon thin film transistors
The heats of formation of TiO, <TEX>$Ti_2O_3$</TEX>, <TEX>$Ti_3O_5$</TEX> and <TEX>$TiO_2$</TEX> from combustion calorimetry
The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors
The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors
The Work Function of The Elements and Its Periodicity
Technology and Application of Amorphous Silicon
Surface potential profiling and contact resistance measurements on operating pentacene thin film transistors by Kelvin Probe Force Microscopy
Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes
Semiconductor Material and Device Characterization, second ed.
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Physics of Semiconductor Devices, third ed.
Low voltage IGZO TFTs with Al2O3 gate insulator grown by atomic layer deposition
Low resistance Ti/Au contacts to amorphous Ga-In-ZnO
Instabilities in amorphous oxide semiconductor thin film transistors
Indium and gallium diffusion through zirconia in the TiN/<TEX>$ZrO_2$</TEX>/InGaAs stack
Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin film transistors using an n+-ZnO buffer layer
Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
Enhanced performance of <TEX>${\alpha}$</TEX>-IGZO thin film transistors by forming AZO/IGZO heterojunction source/drain contacts
Effect of post treatment for Cu-Cr source/drain electrodes on a-IGZO TFTs
Diffusion of in and Ga in tin/<TEX>$HfO_2$</TEX>/InGaAs nanofilms
Device characterization and design guideline of amorphous InGaZnO junctionless thin film transistor
Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors
Characterizations of amorphous IGZO TFTs with low subthreshold swing
Channel length and gate bias dependence of contact resistance and mobility for <TEX>$In_2O_3$</TEX> nanowire field effect transistors
CRC Handbook of Chemistry and Physics, ninety seventh ed.
A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source/drain metallization
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Specific contact resistance of IGZO thin film transistors with metallic and transparent conductive oxides electrodes and XPS study of the contact/semiconductor interfaces'
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