연구동향 분석

A SPICE-Compatible Model for a Gate/Body-Tied PMOSFET Photodetector With an Overlapping Control Gate

( Sung Hyun Jo ) ( Myung Han Bae ) ( Byoung Soo Choi ) ( Pyung Choi ) ( Jang Kyoo Shin ) 2015년

논문상세정보
인용/피인용
' A SPICE-Compatible Model for a Gate/Body-Tied PMOSFET Photodetector With an Overlapping Control Gate' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 전자공학
  • gate/body-tiedphotodetector
  • high-sensitivity
  • spice model
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
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' A SPICE-Compatible Model for a Gate/Body-Tied PMOSFET Photodetector With an Overlapping Control Gate' 의 참고문헌

  • 내장된 전송게이트를 가지는 Gate/Body-Tied PMOSFET 광 검출기의 모델링
    이민호 센서학회지 23 (4) : 284 ~ 289 [2014]
  • Which photodiode to use : A comparison of CMOS-compatible structures
    K. Murari IEEE Sensors J 9 (7) : 752 ~ 760 [2009]
  • The dynamic threshold voltage MOSFET
    F. Javier de la Hidalga Proceedings of IEEE International Circuit and Systems : 414 ~ 422 [2000]
  • Pulse modulation CMOS image sensor for biofluorescence imaging applications
    Kagawa, K. Nunoshita, M. Ohta, J. Shiosaka, S. Tokuda, T. Proc. IEEE Symp. Circuits and Systems 4 : 3487 ~ 3490 [2005]
  • Physically based compact modelling on lateral pnp transistors
    F. G. O'Hara Trinity College [1990]
  • Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate
    W. Zhang IEEE Electron Device Lett 19 (11) : 435 ~ 437 [1998]
  • MOS transistors operated in the lateral bipolar mode and their application in CMOS technology
    E. A. Vittoz IEEE J. Solid-State Circuits 18 (3) : 273 ~ 279 [1983]
  • MODELLA-a new physics-based compact model for lateral p-n-p transistors
    F. G. O'Hara IEEE Trans. Electron Devices 39 (11) : 2523 ~ 2561 [1992]
  • Low-noise logarithmic active pixel sensor using a gate/n-well-tied PMOSFET-type photodetector
    H. Y. Hyun Sensors and Materials 19 (7) : 435 ~ 444 [2008]
  • Integrated circuit model for lateral pnp transistors including isolation junction interaction
    I. Kidron International J. Electronics 31 (5) : 421 ~ 440 [1971]
  • Highsensitivity SOI MOS photodetector with self-amplification
    H. Yamamoto Japanese J. Applied Physics 35 : 1382 ~ 1386 [1996]
  • Highly sensitive gate/body-tied p-channel metal oxide semiconductor field effect transistor-type photodetector with an overlapping control gate
    J. Jung Japanese J. Applied Physics 15 : 361 ~ 370 [2012]
  • Fully integrated single photon avalanche diode detector in standard CMOS 0. 18 ìm technology
    N. Faramarzpour IEEE Trans. Electron Devices 55 (3) : 760 ~ 767 [2008]
  • Dynamic threshold-voltage MOSFET(DTMOS)for ultra-low voltage VLSI
    F. Assaderaghi IEEE Trans. Electron Devices 44 (3) : 414 ~ 421 [1997]
  • Dynamic range extension of the nwell/gate-tied PMOSFET-type photodetector with a built-in transfer gate
    S. Y. Lee J. Sensor Science and Technology 19 (4) : 328 ~ 335 [2010]
  • An all-digital, time-gated 128×128 SPAD array for on-chip, filter-less fluorescence detection
    Y. Maruyama 16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS) : 1180 ~ 1183 [2011]
  • A novel bipolar imaging device—BASIC(BAse stored imager in CMOS)process
    Y. -J. Kook IEEE Trans. Electron Devices 50 (11) : 2189 ~ 2195 [2003]
  • A Sub-0. 5 V Dynamic Threshold PMOS(DTPMOS)Scheme for Bulk CMOS Technologies
    Mohamed Elgebaly International Conference on Microelectronics : 75 ~ 78 [2001]