연구동향 분석

3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO

Boukortt, Nour El Islam Hadri, Baghdad Caddemi, Alina Crupi, Giovanni Patane, Salvatore 2015년

논문상세정보
인용/피인용
' 3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • devicescaling
  • finfets
  • silicon on insulator
  • silvaco software
  • work function
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
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' 3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO' 의 참고문헌

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