연구동향 분석

The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

Woo, Jong-Chang Choi, Chang-Auck Kim, Chang-Il 2014년

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인용/피인용
' The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • $sf_6$
  • aes
  • etching
  • icp
  • xps
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
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' The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process' 의 참고문헌

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