Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

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' Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope' 의 주제별 논문영향력
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주제
  • enhancementmode
  • galliumnitride(gan)
  • power device
  • tcad
  • vertical channel
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' Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope' 의 참고문헌

  • Vertical heterojunction field-effect transistors utilizing re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates
    S. Yaegassi Phys. Status Solidi 8 (2) : 450 ~ 452 [2011]
  • Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
    H. Otake Appl. Phys. Express 1 (1) : 011105-1 ~ 011105-3 [2008]
  • Trapping effects in GaN and SiC microwave FETs
    S. C. Binari Proc. IEEE 9 (6) : 1048 ~ 1058 [2002]
  • Surface-Related Drain Current Dispersion Effects in AlGaN-GaN HEMTs
    G. Meneghesso IEEE Trans. Electron Devices 51 (10) : 1554 ~ 1561 [2004]
  • Monte Carlo simulation of electron transport in gallium nitride
    B. Gelmont J. Appl. Phys 74 (3) : 1818 ~ 1820 [1993]
  • Mechanism of PEALD-Grown AlN Passivation for AlGaN GaN HEMTs : Compensation of Interface Traps by Polarization Charges
    S. Huang IEEE Electron Device Lett 34 (2) : 193 ~ 195 [2013]
  • Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts
    H. Yu IEEE Electron Device Lett 26 (5) : 283 ~ 285 [2005]
  • Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure
    M. Siva Pratap Reddy JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 13 (5) : 492 ~ 499 [2013]
  • Induced strain mechanism of current collapse in AlGaN GaN heterostructure field-effect transistors
    G. Simin Appl. Phys. Lett 79 (16) : 2651 ~ 2653 [2001]
  • Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
    D. Okamoto IEEE Electron Device Lett 31 (7) : 710 ~ 712 [2010]
  • Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide
    G. Y. Chung IEEE Electron Device Lett 22 (4) : 176 ~ 178 [2001]
  • Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs
    Min-Seok Kang Journal of Electrical Engineering & Technology 7 (2) : 236 ~ 239 [2012]
  • Highvoltage normally off GaN MOSFETs on sapphire substrates
    K. Matocha IEEE Trans. Electron Devices 52 (1) : 6 ~ 10 [2005]
  • High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation
    Minki Kim Journal of Electrical Engineering & Technology 8 (5) : 1157 ~ 1162 [2013]
  • High performance CMOS surrounding gate transistor(SGT)for ultra high density LSIs
    H. Takato IEDM Tech. Dig : 222 ~ 225 [1988]
  • Gate Workfunction Optimization of a 32 nm Metal Gate MOSFET for Low Power Applications
    Yongho Oh Journal of Electrical Engineering & Technology 1 (2) : 237 ~ 240 [2006]
  • GaN/AlGaN high electron mobility transistors with fT of 110 GHz
    M. Micovic IEEE Electronics Lett 36 (4) : 358 ~ 359 [2000]
  • GaN-Based RF power devices and amplifiers
    U. K. Mishra Proc. IEEE 96 (2) : 287 ~ 305 [2008]
  • Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications
    이재길 Journal of the Korean Physical Society 59 (3) : 2297 ~ 2300 [2011]
  • Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
    Chow, T. P. Huang, W. Khan, T. Proc. of the 18th International Symposium on Power Semiconductor Devices & IC’s [2006]
  • Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics
    M. Kanamura IEEE Electron Device Lett 31 (3) : 189 ~ 191 [2010]
  • Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate
    S. Karmalkar IEEE Trans. Electron Devices 48 (8) : 1515 ~ 1521 [2001]
  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
    S. Huang IEEE Electron Device Lett 33 (4) : 516 ~ 518 [2012]
  • Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire
    S. K. Oh J. Semicond. Technol. Sci 11 (6) : 617 ~ 621 [2013]
  • Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors
    S. Cho IEEE Trans. Electron Devices 58 (12) : 4164 ~ 4171 [2011]
  • ATLAS User’s Manual
  • A Novel Circuit for Characteristics Measurement of SiC Transistors
    Guoen Cao Hee-Jun Kim Journal of Electrical Engineering & Technology 9 (4) : 1332 ~ 1342 [2014]