연구동향 분석

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

Horyeong Lee Meng Li Jungwoo Oh Hi-Deok Lee 2015년

논문상세정보
인용/피인용
' A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 전자공학
  • antimony interlayer
  • effectiveschottkybarrierheight
  • nchannel mosfets
  • nckel silicide
  • schottky diode
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
2,332 0

0.0%

' A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs' 의 참고문헌

  • Threshold Voltage Controlled 0.1- μm MOSFET Utilizing Inversion Layer as Extreme Shallow Source/Drain
    H. Noda IEEE International Electron Devices Meeting : 123 ~ 126 [1993]
  • Self-Aligned Nickel-Mono- Silicide Technology for High-Speed Deep Submicrometer Logic CMOS ULSI
    T. Morimoto IEEE Transactions on Electron Devices 42 (5) : 915 ~ 922 [1995]
  • Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge Contacts
    Y. Tong IEEE Electron Device Letters 33 (6) : 773 ~ 775 [2012]
  • Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal
    Z. Zhang IEEE Electron Device Letters 28 (7) : 565 ~ 568 [2007]
  • Reduction of Sheet Resistance and Low-Thermal-Budget Relaxation of Stress Gradients in Polysilicon Microcantilever Beams Using Nickel-Silicides
    T. J. Kang Journal of Microelctromechanical Systems 16 (2) : 279 ~ 288 [2007]
  • Physics of Semiconductor Devices
    S. M. Sze Wiley-Interscience [1981]
  • Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub- 35nm Gate Length
    R. T. P. Lee IEEE International Electron Devices Meeting : 1 ~ 4 [2006]
  • NiSi salicide technology for scaled CMOS
    H. Iwai Microelectronic Engineering 60 (1-2) : 157 ~ 169 [2002]
  • Introduction to Microfabrication
    S. Franssila Wiley [2004]
  • Integrated Methodology for Accurate Extraction of S/D Series Resistance Components in Nanoscale MOSFETs
    S. D. Kim IEEE International Electron Devices Meeting : 149 ~ 152 [2005]
  • Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Process
    D. K. Wilson Physical Review 124 (4) : 1068 ~ 1083 [1961]
  • Correlating Drain Junction Scaling, Salicide Thickness, and Lateral NPN Behavior, with the ESD/EOS Performance of a 0.25 μm CMOS Process
    A. Amerasekera IEEE International Electron Devices Meeting : 893 ~ 896 [1996]
  • Contact-Resistance Reduction for Strained n-FinFETs With Silicon-Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation
    S. M. Koh IEEE Transactions on Electron Devices 58 (11) : 3852 ~ 3862 [2011]
  • Contact Technology for Strained nFinFETs With Silicon-Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation
    S. M. Koh IEEE Transactions on Electron Devices 59 (4) : 1046 ~ 1055 [2012]
  • Boron Implanted Shallow Junction Formation by High-Temperature/ Short- Time/High-Ramping-Rate(400oC/sec) RTA
    S. Shishiguchi Symposium on VLSI Technology : 89 ~ 90 [1997]
  • An in situ study of the stability of thin Ni-silicide layers
    D. Deduytsche Ghent University [2006]
  • Advanced model and analysis of series resistance for CMOS scaling into nanometer regime
    S. D. Kim IEEE Transactions on Electron Devices 49 (3) : 467 ~ 472 [2002]