Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

논문상세정보
' Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 전자공학
  • algan/gan heterostructure
  • forming gas annealing
  • interfacetrapdensity
  • moshfet
  • post metallization annealing
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
2,323 0

0.0%

' Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET' 의 참고문헌

  • “High frequency 12V – 1V DCDC converters – Advantages of Using EPC’s Galium Nitride (GaN) Power Transistors vs. Silicon-based Power MOSFETs,” Application Note
  • http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN/ bandstr.html
  • Two-dimensional Electron Gases Induced By Spontaneous And Piezoelectric Polarization In N- and Ga-face AlGaN/GaN Heterostructures
    O. Ambacher Journal of Applied Physics 85 (6) : 3222 ~ 3233 [1999]
  • Trap States in AlGaN/GaN Metal-Oxide-Semiconductor Structures with Al2O3 Prepared by Atomic Layer Deposition
    D. Gregusova Journal of Applied Physics 107 (10) : 106104 ~ [2010]
  • The Si-SiO2 Interface – Electrical Properties as Determined by the Metal- Insulator Silicon Conductance Technique
    E. H. Nicollian The Bell System Technical Journal 46 (6) : 1055 ~ 1133 [1967]
  • State-off-the-Art AlGaN/GaN-on- Si Heterojunction Field Effect Transistors with Dual Field Plates
    J. G. Lee Applied Physics Express 5 (6) : 066502 ~ [2012]
  • Semiconductor Material and Device Characterization
    D. K. Schroder A John Wiley & Sons, Inc [1990]
  • Recessed-gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications
    W. Saito Electron Devices, IEEE Transaction on 53 (2) : 356 ~ 362 [2006]
  • Normally-off GaN Recessed-gate MOSFET Fabricated by Selective Area Growth Technique
    Y. Yao Applied Physics Express 7 (1) : 016502 ~ [2013]
  • Interface Trap Evaluation of Pd/Al2O3/GaN Metal Oxide Semiconductor Capacitors and The Influence of Near-Interface Hydrogen
    R. D. Long Applied Physics Letters 103 (20) : 201607 ~ [2013]
  • Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs
    T. Hung IEEE Electron Device Letters 35 (3) : 312 ~ 314 [2014]
  • High-quality SiO2/GaN Interface for Enhanced Operation Field-Effect Transistor
    H. Kambayashi Physica Status Solidi A 204 (6) : 2032 ~ 2036 [2007]
  • High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx Passivation
    Z. Tang IEEE Electron Device Letters 34 (3) : 366 ~ 368 [2013]
  • High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
    B. R. Park IEEE Electron Device Letters 34 (3) : 354 ~ 356 [2013]
  • Fabrication and Properties GaN MIS Capacitors with a Remote-Plasma Atomic- Layer-Deposited Al2O3 Gate Dielectric
    H. -S. Yun Journal of the Korean Physical Society 54 (2) : 707 ~ 711 [2009]
  • Enhancement mode AlGaN/GaN HFET with Selectively Grown pn Junction Gate
    X. Hu Electronics Letters 36 (8) : 753 ~ 754 [2000]
  • Effect of Annealing on Structural and Electrical Properties of Ge Metal-Oxide- Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric
    S. Chandra Materials Tranasctions 52 (1) : 118 ~ 123 [2010]
  • Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications
    W. Saito Japanese Journal of Applied Physics 43 (4B) : 2239 ~ 2242 [2004]
  • Components of Channel Capacitance in Metal-Insulator-Semiconductor Capacitors
    A. J. Grede Journal of Applied Physics 114 (11) : 114510 ~ [2013]
  • Comparison of Methods to Quantify Interface Trap Densities at Dielectric/III-V Semiconductor Interfaces
    R. E. -H Journal of Applied Physics 108 (12) : 124101 ~ [2010]
  • Behavior of Hydrogen In High Dielectric Constant Oxide Gate Insulators
    P. W. Peacock Applied Physics Letters 83 (10) : 2025 ~ 2027 [2003]
  • An Investigation of Surface States at a Silicon/Silicon Oxide Interface Employing Metal-Oxide-Silicon Diodes
    L. M. Terman Solid-State Electronics 5 (5) : 285 ~ 299 [1962]
  • AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Ratio
    Y. Lin IEEE Electron Device Letters 31 (2) : 102 ~ 104 [2010]
  • -examination of The Extraction of MOS Interface-State Density by C-V Stretchout and Conductance Methods
    H. -P. Chen Semiconductor Science and Technology 28 (8) : 085008 ~ [2013]