연구동향 분석

VF₂-TrFE copolymer 박막을 이용한 MFS 커패시터의 제작 및 특성

정상현(Sang-Hyun Jeong) 김광호(Kwang-Ho Kim) 2014년

논문상세정보
인용/피인용
' VF₂-TrFE copolymer 박막을 이용한 MFS 커패시터의 제작 및 특성' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 전산공학
  • coercivefiled
  • fatigue
  • hysteresis
  • mfscapacitor
  • remnantpolarization
  • vf₂-trfecopolymer
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
818 0

0.0%

' VF₂-TrFE copolymer 박막을 이용한 MFS 커패시터의 제작 및 특성' 의 참고문헌

  • Top-Gate Ferroelectric Thin-Film-Transistors with P(VDFTrFE)Copolymer
    S. W. Jung Current Appl. Phys : e58 ~ e60 [2010]
  • The Flexible Non-Volatile Memory Devices using Oxide Semiconductors and Ferroelectric Polymer Poly (vinylidene fluoride-trifluoroethylene)
    G. G. Lee Appl. Phys. Lett 99 : 012901-1 ~ 012901-3 [2011]
  • Pyroelectricity and optical second harmonic generation in polyvinylidene fluoride films
    J. G. Bergman Appl. Phys. Lett 18 : 203 ~ 205 [1971]
  • Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non-Volatile Polymer Memory
    S. J. Kang Adv. Funct. Mater 19 : 2812 ~ 2818 [2009]
  • Nonvolatile Memory Performance Improvements for Solution-Processed Thin-Film Transistors with Composition-Modified In–Zn–Ti–O Active Channel and Ferroelectric Copolymer Gate Insulator
    J. Y. Bak Org. Electr 14 : 2148 ~ 2157 [2013]
  • Non-volatile Organic Memory with Sub-Millimetre Bending Radius
    R. H. Kim Nature Comm 5 : 3583-1 ~ 3583-12 [2014]
  • Low-Voltage- Operated Top-Gate Polymer Thin- Film Transistors with High-Capacitance P(VDF- TrFE)/ PVDF- Blended Dielectrics
    S. W. Jung Current Appl. Phys : S213 ~ S218 [2011]
  • Impact of Interface Controlling Layer of Al2O3 for Improving the Retention Behaviors of In–Ga–Zn Oxide-Based Ferroelectric Memory Transistor
    S. M. Yoon Appl. Phys. Lett 96 : 232903-1 ~ 232903-3 [2010]
  • Crystal Structures of Three Crystalline. Forms of Poly(viny1idene Fluoride)
    R. Hasegawa Polym. J. 3 : 600 ~ 610 [1972]
  • A new solid state memory resistor
    L. Moll IEEE Trans. Electron Devices 10 (9) : 338 ~ [1963]
  • A New Ferroelectric Memory Devices, Metal-Ferroelectric-semicoductor Transistor
    S. Y. Wu IEEE Trans. Electron Devices ED-21 (8) : 499 ~ [1974]
  • A Ferroelectric Nonvolatile Memory : 130 ~
    S. S. Eaton [1988]