연구동향 분석

Induction Heating을 이용한 태양전지 Light Induced Degradation 처리 연구 = Treatment of Light-Induced Degradation for Solar Cells in p-PERC Solar Module via Induction Heating

석민광 2022년

논문상세정보
인용/피인용
' Induction Heating을 이용한 태양전지 Light Induced Degradation 처리 연구 = Treatment of Light-Induced Degradation for Solar Cells in p-PERC Solar Module via Induction Heating' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 응용 물리
  • Induction heating
  • Light-induced degradation
  • p-PERC solar cell
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
97 0

0.0%

' Induction Heating을 이용한 태양전지 Light Induced Degradation 처리 연구 = Treatment of Light-Induced Degradation for Solar Cells in p-PERC Solar Module via Induction Heating' 의 참고문헌

  • Understanding and reducing the boronoxygen- related performance degradation in Czochralski silicon solar cells
    Bothe , K. ; Hezel , R. ; Schmidt , J Volume 95 , pp . 223 ? 228 . [2004]
  • Slow down of the light-induceddegradation in compensated solar-grade multicrystalline silicon .
  • Production viability of gallium doped mono-crystalline solar cells .
  • Electronically controlled reactions of interstitial iron in silicon .
    Kimerling , L.C . ; Benton , J.L . 116 ( 1-3 ) , 297 ? 300 [1983]
  • 9. Sterk, S.; Münzer, K.; Glunz, S. Investigation of the degradation of crystalline silicon solar cells. Proceedings of the 14th European Photovoltaic Solar Energy Conference, 1997, Vol. 85.
    [1997]
  • 8. Knobloch, J.; Clunz, S.; Henninger, V.; Warta, W.; Wettling, W.; Schomann, F.; Schmidt, W.; Endrös, A.; Münzer, K. 21% efficient solar cells processed form Czochralski grown silicon. Proceedings of the 13th European Photovoltaic Solar Energy Conference. WIP Renewable Energies Nice, France, 1995, pp. 9-12.
  • 7. Fischer, H. Investigation of photon and thermal changes in silicon solar cell. Conference Record of the 10^<th> IEEE Photovoltaic Specialists Conference, 1973, 1973.
  • 61. Bothe, K.; Schmidt, J. Electronically activated boron-oxygen-related recombination centers in crystalline silicon. J. Appl. Phys. 2006, 99, 013701
    [2006]
  • 60. Palmer, D.W.; Bothe, K.; Schmidt, J. Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon. Phys. Rev. B 2007, 76, 035210.
    [2007]
  • 6. Schmidt, J.; Bothe, K. Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon. Physical review B 2004, 69, 024107.
    [2004]
  • 59. Glunz, S.; Schaffer, E.; Rein, S.; Bothe, K.; Schmidt, J. Analysis of the defect activation in Cz-silicon by temperature-dependent bias-induced degradation of solar cells. In Proceedings of the 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, Osaka, Japan, 11–18 May 2003; Volume 1, pp. 919–922.
  • 58. Schmidt, J.; Bothe, K.; Hezel, R. Formation and annihilation of the metastable defect in boron-doped Czochralski silicon. In Proceedings of the Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, New Orleans, LA, USA, 19–24 May 2002; pp. 178–181.
  • 56. Du, M.H.; Branz, H.M.; Crandall, R.S.; Zhang, S.B. A New Mechanism for Non-Radiative Recombination at Light-Induced Boron-Oxygen Complexes in Silicon. Presented at the 2005 DOE Solar Energy Technologies, Denver, CO, USA, 7–10 November 2005
  • 54. Kim, S.M.; Jung, S.; Kim, Y.; Kim, J. Anti-LID Process with a Remote Direct Heating Method Using a Half-Bridge Resonance Circuit for a PERC Solar Cell Module. Energies 2020, 13, 110.
    [2020]
  • 53. Kim, S.M.; Chun, S.; Bae, S.; Park, S.; Kang, M.G.; Song, H.E.; Kang, Y.; Lee, H.S.; Kim, D. Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells. Applied Physics Letters 2014, 105, 083509.
    [2014]
  • 52. Espenson, J.H. Chemical Kinetics and Reaction Mechanisms, 2nd ed.; McGraw-Hill, Inc. New York, NY, USA: 2014.
    [2014]
  • 51. Connors, K.A. Chemical Kinetics; VCH Publishers, Inc. New York, NJ, USA: 2014.
    [2014]
  • 50. Edwards, T.C.; Steer, M.B. Foundations for Microstrip Circuit Design; John Wiley & Sons, 2016.
    [2016]
  • 5. Glunz, S.; Rein, S.; Warta, W.; Knobloch, J.; Wettling, W. On the degradation of Cz-silicon solar cells. Proc. 2nd WC PVSEC, 1998.
    [1998]
  • 49. Adey, J.; Jones, R.; Palmer, D.W.; Briddon, P.R.; Oberg, S. Degradation of boron-doped czochralski-grown silicon solar cells. Physical Review Letters, 2004, 93(5)
    [2004]
  • 48. silicon. Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting, November 2005
  • 47. Mao-Hua, D.;, Howard, M.B.; Richard, S.C.l, Zhang, S.B. A new mechanism for non-radiative recombination at light-induced boron-oxygen complexes in
  • 45. Aggregation kinetics of thermal double donors in silicon. 2001, 86(14), 3060– 3063
    [2001]
  • 44. Mikkelsen JR, J.C. The diffusivity and solubility of oxygen in silicon, In Materials Research Society, Boston, held December 2-5, 1986, page 19
    [1986]
  • 43. Oxgen-related minority-carrier trapping centers in p-type Czochralski silicon. 2002, 80(23), 4395
    [2002]
  • 42. Karsten Bothe, K.; Schmidt, J. Fast-forming boron-oxygen-related recombination center in crystalline silicon. Applied Physics Letters, 2005, 87(26)
    [2005]
  • 41. Fischer, H. Pschunder, W. Investigation of photon and thermal induced changes in silicon solar cells. IEEE Photovoltaic Specialists Conference 10th, page 404, 1974.
    [1974]
  • 40. Light-induced degradation in crystalline silicon solar cells. 95-96:187– 196, 2004
    [2004]
  • 4. Schmidt, J.; Aberle, A.G.; Hezel, R. Investigation of carrier lifetime instabilities in Cz-grown silicon. Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference-1997. IEEE, 1997, pp. 13-18.
    [1997]
  • 39. Sterk; nvestigation of the degradation of crystalline. - Google Scholar. Proc. 14th EC PVSEC (Barcelona), 1997.
    [1997]
  • 38. light-induced degradation in CZ silicon solar cells: fundamental understanding and strategies for its avoidance. google.co.kr, 2002
    [2002]
  • 37. Sawada, T.; Terada, N.; Tsuge, S.; Bada, T.; Takahama, T.; Wakisaka, K.; Tsuda, S.; Nakano, S. High-efficiency a-si/c-si heterojunction solar cell, In Photovoltaic Energy Conversion, 1994, Conference Record of the Twenty Fourth, IEEE Photovoltaic Specilaists Conference-1994, 1994 IEEE First Workd Conference on, 1994, 2, 1219-1226
  • 36. Dziewior, J.; Schmid, W. Auger coefficients for highly doped and highly exited silicon. Applied Physics Letters, 1977, 31(5), 346-348
    [1977]
  • 35. Hangleiter, A.; Häker, R. Enhancement of band-to-band Auger recombination by electron-hole correlations; Applied Physics Letters 1990, 65(2), 215
    [1990]
  • 34. Sze, S.M.; Irvin, J.C. Resistivity, mobility and impurity and impurity levels in GaAs, Ge, and Si at 300K. Solid-State Electrons, 1968, 11(6), 599-602
    [1968]
  • 33. Ben, G.S,; Sanjay K.B. Solid State Electrons Devices. International Edition. April 2009
  • 32. Herguth, A.; Schubert, G.; Kaes, M.; Hahn, G. Avoiding boron-oxygen related degradation in highly boron doped Cz silicon. 21st European Photovoltaic Solar Energy Conference: 21th EC PVSEC, 2006, 530–537.
    [2006]
  • 31. Herguth, A.; Schubert, G.; Kaes, M.; Hahn, G. A new approach to prevent the negative impact of the metastable defect in boron doped Cz silicon solar cells. 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006, Vol. 1, 940–943.
    [2006]
  • 30. Grant, N.E.; Altermatt, P.P.; Niewelt, T.; Post, R.; Kwapil, W.; Schubert, M.C.; Murphy, J.D. Gallium-doped silicon for high efficiency commercial passivated emitter and rear solar cells. Solar RRL 2021, 5, 2000754.
  • 3. Green, M.; Dunlop, E.; Hohl-Ebinger, J.; Yoshita, M.; Kopidakis, N.; Hao, X. Solar cell efficiency tables (version 57). Progress in Photovoltaics: Resesrch and Application 2021, 29, 3–15, [http://onlinelibrary.wiley.com/doi/pdf/10.1002/pip /3371].doi:http://doi.org/10.1002/pip.3371.
  • 29. Lin, D.; Hu, Z.; Song, L.; Yang, D.; Yu, X. Investigation on the light and elevated temperature induced degradation of gallium doped Cz-Si. Solar Energy 2021, 225, 407–411.
  • 28. Fritz, J.M.; Zuschlag, A.; Skorka, D.; Schmid, A.; Hahn, G. Temperature dependent degradation and regeneration of differently doped mc-Si materials. Energy Procedia 2017, 124, 718–725.
    [2017]
  • 27. Fritz, J.; Zuschlag, A.; Skorka, D.; Schmid, A.; Hahn, G. Impact of temperature and doping on LETID and regeneration in mc-Si. 33rd European Photovoltaic Solar Energy Conference and Exhibition: EU PVSEC 2017, 2017, pp. 569–572.
  • 26. Zhang, S.; Peng, J.; Qian, H.; Shen, H.; Wei, Q.; Lian, W.; Ni, Z.; Jie, J.; Zhang, X.; Xie, L. The impact of thermal treatment on light-induced degradation of multicrystalline silicon PERC solar cell. Energies 2019, 12, 416.
    [2019]
  • 25. Dhamrin, M.; Hashigami, H.; Saitoh, T. Elimination of light-induced degradation with gallium-doped multicrystalline silicon wafers. Progress in Photovoltaics: Research and Applications 2003, 11, 231–236.
    [2003]
  • 24. Meemongkolkiat, V.; Nakayashiki, K.; Rohatgi, A.; Crabtree, G.; Nickerson, J.; Jester, T. Resistivity and lifetime variation along commercially grown Ga-and B-Doped Czochralski Si ingots and its effect on light-induced degradation and performance of solar cells. Progress in Photovoltaics: Research and Applications 2006, 14, 125–134.
    [2006]
  • 23. Glunz, S.; Rein, S.; Knobloch, J.;Wettling,W.; Abe, T. Comparison of boron-and gallium-doped p-type Czochralski silicon for photovoltaic application. Progress in Photovoltaics: Research and Applications 1999, 7, 463–469.
    [1999]
  • 21. Rosenits, P.; Roth, T.; Glunz, S.W.; Beljakowa, S. Determining the defect parameters of the deep aluminum-related defect center in silicon. Applied Physics Letters 2007, 91, 122109.
    [2007]
  • 20. Schmidt, J. Temperature-and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors. Applied Physics Letters 2003, 82, 2178–2180.
    [2003]
  • 2. Kersten, F.; Doll, R.; Kux, A.; Huljic, D.M.; Gorig, M.A.; Breyer, C.; Müller, J.W.; Wawer, P. PV Learning Curves: Past and Future Drivers of Cost Reduction. 2011.
    [2011]
  • 19. Chen, D.; Hamer, P.G.; Kim, M.; Fung, T.H.; Bourret-Sicotte, G.; Liu, S.; Chan, C.E.; Ciesla, A.; Chen, R.; Abbott, M.D.; others. Hydrogen induced degradation: A possible mechanism for light-and elevated temperature-induced degradation in n-type silicon. Solar Energy Materials and Solar Cells 2018, 185, 174–182.
  • 18. Sperber, D.; Herguth, A.; Hahn, G. A 3-state defect model for light-induced degradation in boron-doped float-zone silicon. physica status solidi (RRL)–Rapid Research Letters 2017, 11, 1600408.
    [2017]
  • 17. Niewelt, T.; Schindler, F.; Kwapil, W.; Eberle, R.; Schön, J.; Schubert, M.C. Understanding the light-induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p-type silicon. Progress in Photovoltaics: Research and Applications 2018, 26, 533–542.
    [2018]
  • 16. Graf, A.; Herguth, A.; Hahn, G. Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions. AIP Conference Proceedings. AIP Publishing LLC, 2019, Vol. 2147, p. 140003.
    [2019]
  • 15. Chen, D.; Kim, M.; Stefani, B.V.; Hallam, B.J.; Abbott, M.D.; Chan, C.E.; Chen, R.; Payne, D.N.; Nampalli, N.; Ciesla, A.; others. Evidence of an identical firing-activated carrier-induced defect in monocrystalline and multicrystalline silicon. Solar Energy Materials and Solar Cells 2017, 172, 293–300.
  • 14. Fertig, F.; Lantzsch, R.; Mohr, A.; Schaper, M.; Bartzsch, M.; Wissen, D.; Kersten, F.; Mette, A.; Peters, S.; Eidner, A.; others. Mass production of p-type Cz silicon solar cells approaching average stable conversion efficiencies of 22%. Energy Procedia 2017, 124, 338–345.
  • 13. Kersten, F.; Fertig, F.; Petter, K.; Klöter, B.; Herzog, E.; Strobel, M.B.; Heitmann, J.; Müller, J.W. System performance loss due to LeTID. Energy Procedia 2017, 124, 540–546.
    [2017]
  • 12. Krauss, F.; Fertig, F.; Menzel, D.; Rein, S. Light-induced degradation of silicon solar cells with aluminiumoxide passivated rear side. Energy Procedia 2015, 77, 599-606.
    [2015]
  • 11. Ramspeck, K.; Zimmermann, S.; Nagel, H.; Metz, A.; Gassenbauer, Y.; Birkmann, B.; Seidl, A. Light Induced Degradation of Rear Passivated mc-Si Solar Cells. 2012. Available online: https://www.eupvsec-proceedings.com/ proceedings? paper=18798 (accessed on 21 July 2021).
  • 10. Zhao, J.; Wang, A.; Green, M.A.; Ferrazza, F. 19.8% efficient honeycomb textured multicrystalline and 24.4% monocrystalline silicon solar cells. Applied Physics Letter 1998, 73, 1991–1993.
  • 1. Equipment, V.P. International Technology Roadmap for Photovoltaic (ITRPV). 2021. Available online: http://itrpv.vdma.org/en/ueberuns (accessed on 21 July 2021)