연구동향 분석

Nano-wedge RRAM Cross-point Array with Nickel Silicide Bottom Electrode as a Synaptic Device for Neuromorphic Computing Applications = 시냅스 소자 적용을 위한 니켈 실리사이드 웨지구조를 가지는 저항변화 메모리 어레이

이동근 2021년

논문상세정보
인용/피인용
' Nano-wedge RRAM Cross-point Array with Nickel Silicide Bottom Electrode as a Synaptic Device for Neuromorphic Computing Applications = 시냅스 소자 적용을 위한 니켈 실리사이드 웨지구조를 가지는 저항변화 메모리 어레이' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 응용 물리
  • NiSi nano-wedge RRAM array
  • Synaptic devices
  • in-memorycomputing
  • resistive random access memory
  • vector-matrix multiplication
  • wire resistance
  • 뉴로모픽 컴퓨팅
  • 니켈실리사이드
  • 메모리 어레이
  • 벡터행렬 연산
  • 시냅스 소자
  • 웨지구조 저항 변화 메모리 어레이
  • 저항변화 메모리
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
4,689 0

0.0%

' Nano-wedge RRAM Cross-point Array with Nickel Silicide Bottom Electrode as a Synaptic Device for Neuromorphic Computing Applications = 시냅스 소자 적용을 위한 니켈 실리사이드 웨지구조를 가지는 저항변화 메모리 어레이' 의 참고문헌

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  • Nano-wedge RRAM Cross-point Array with Nickel Silicide Bottom Electrode as a Synaptic Device for Neuromorphic Computing Applications = 시냅스 소자 적용을 위한 니켈 실리사이드 웨지구조를 가지는 저항변화 메모리 어레이