Atmospheric-pressure plasma treatment toward high-quality solution-processed metal oxide films in thin-film transistors

박진택 2020년
논문상세정보
' Atmospheric-pressure plasma treatment toward high-quality solution-processed metal oxide films in thin-film transistors' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 기술과 연합작용
  • Atmospheric pressure plasma
  • gatedielectric
  • low-temperature process
  • oxide semiconductor
  • solution process
  • thin film transistor
  • 대기 플라즈마
  • 박막 트랜지스터
  • 산화물 반도체
  • 용액 공정
  • 저온 공정
  • 절연체
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
413 0

0.0%

' Atmospheric-pressure plasma treatment toward high-quality solution-processed metal oxide films in thin-film transistors' 의 참고문헌

  • [9] Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.S. Oh, G.-R. Yi, Y.-Y. Noh, and S.K. Park, Nature 489, 128 (2012).
    489 , 128 ( [2012]
  • [9] Y. Hwan Hwang, J.-S. Seo, J. Moon Yun, H. Park, S. Yang, S.-H. Ko Park, and B.-S. Bae, NPG Asia Mater. 5, e45 (2013).
    5 , e45 ( [2013]
  • [9] G. Adamopoulos, S. Thomas, P.H. Wöbkenberg, D.D.C. Bradley, M.A. McLachlan, and T.D. Anthopoulos, Adv. Mater. 23, 1894 (2011).
  • [8] Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.S. Oh, G.-R. Yi, Y.-Y. Noh, and S.K. Park, Nature 489, 128 (2012).
    489 , 128 ( [2012]
  • [8] N.-K.Cho, J. Park, D. Lee, J.-W. Park, W.H. Lee, and Y.S. Kim, ACS Appl. Electron. Mater. 1, 1698 (2019).
    1 , 1698 ( [2019]
  • [8] J. Robertson, Reports Prog. Phys. 69, 327 (2006).
  • [7] M.G. Kim, M.G. Kanatzidis, A. Facchetti, and T.J. Marks, Nat. Mater. 10, 382 (2011).
  • [7] J. Park, N.-K.Cho, S.-E. Lee, E.G. Lee, J. Lee,C. Im, H. Na, and Y.S. Kim, Nanotechnology 30, 495702 (2019).
    30 , 495702 ( [2019]
  • [6] K.K. Banger, Y. Yamashita, K. Mori, R.L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, Nat. Mater. 10, 45 (2011).
  • [6] J.H. Park, K. Kim, Y.B. Yoo, S.Y. Park, K.-H. Lim, K.H. Lee, H.K. Baik, and Y.S. Kim, J. Mater.Chem.C 1, 7166 (2013).
    1 , 7166 ( [2013]
  • [6] J. Park, J.E. Huh, S.E. Lee, J. Lee, W.H. Lee, K.H. Lim, and Y.S. Kim, ACS Appl. Mater. Interfaces 10, 30581 (2018).
    10 , 30581 ( [2018]
  • [5] Y.S. Rim, H.Chen, X. Kou, H.S. Duan, H. Zhou, M.Cai, H.J. Kim, and Y. Yang, Adv. Mater. 26, 4273 (2014).
    26 , 4273 ( [2014]
  • [5] K.-H. Lim, J. Lee, J.-E. Huh, J. Park, J.-H. Lee, S.-E. Lee, and Y.S. Kim, J. Mater.Chem.C 5, 7768 (2017).
    5 , 7768 ( [2017]
  • [4] Y. Hwan Hwang, J.-S. Seo, J. Moon Yun, H. Park, S. Yang, S.-H. Ko Park, and B.-S. Bae, NPG Asia Mater. 5, e45 (2013).
    5 , e45 ( [2013]
  • [4] D.H. Lee, Y.J.Chang, G.S. Herman, andC.H.Chang, Adv. Mater. 19, 843 (2007).
    19 , 843 ( [2007]
  • [46] J. Lee, J. Lee, J. Park, S.-E. Lee, E.G. Lee,C. Im, K.-H. Lim, and Y.S. Kim, ACS Appl. Mater. Interfaces 11, acsami.8b18422 (2019).
    11 , acsami.8b18422 ( [2019]
  • [45] J. Kolodzey, Guohua Qui, I. Rau, E.A. Chowdhury, J.O. Olowolafe, T.N. Adam, J.S. Suehle, and Yuan Chen, IEEE Trans. Electron Devices 47, 121 (2002).
  • [44] J.E. Huh, J. Park, J. Lee, S.E. Lee, J. Lee, K.H. Lim, and Y.S. Kim, J. Ind. Eng.Chem. 68, 117 (2018).
    68 , 117 ( [2018]
  • [43] W.J. Park, H.S. Shin, B. Du Ahn, G.H. Kim, S.M. Lee, K.H. Kim, and H.J. Kim, Appl. Phys. Lett. 93, 2006 (2008).
    93 ,'' [2006]
  • [42] J. Robertson, Reports Prog. Phys. 69, 327 (2006).
  • [41] B.N. Pal, B.M. Dhar, K.C. See, and H.E. Katz, Nat. Mater. 8, 898 (2009).
    8 , 898 ( [2009]
  • [40] S.-E. Lee, J. Park, J. Lee, E.G. Lee,C. Im, H. Na, N.-K.Cho, K.-H. Lim, and Y.S. Kim, ACS Appl. Electron. Mater. 1, 430 (2019).
    1 , 430 ( [2019]
  • [3] S.Y. Park, B.J. Kim, K. Kim, M.S. Kang, K.H. Lim, T. Il Lee, J.M. Myoung, H.K. Baik, J.H.Cho, and Y.S. Kim, Adv. Mater. 24, 834 (2012).
    24 , 834 ( [2012]
  • [3] R. Chen and L. Lan, Nanotechnology 30, 312001 (2019).
  • [3] P.K. Nayak, Z. Wang, and H.N. Alshareef, Adv. Mater. 28, 7736 (2016).
    28 , 7736 ( [2016]
  • [39] H.J. Na, N.K.Cho, J. Park, S.E. Lee, E.G. Lee,C. Im, and Y.S. Kim, J. Mater.Chem.C 7, 14223 (2019).
    7 , 14223 ( [2019]
  • [38] E.G. Lee, J. Park, S.-E. Lee, J. Lee,C. Im, G. Yoo, J. Yoo, and Y.S. Kim, Appl. Phys. Lett. 114, 172903 (2019).
    114 , 172903 ( [2019]
  • [37] S. Jeong, J.Y. Lee, S.S. Lee, S.W. Oh, H.H. Lee, Y.H. Seo, B.H. Ryu, and Y.Choi, J. Mater.Chem. 21, 17066 (2011).
    21 , 17066 ( [2011]
  • [36] Y.S. Rim, H.Chen, T. Bin Song, S.H. Bae, and Y. Yang,Chem. Mater. 27, 5808 (2015).
    27 , 5808 ( [2015]
  • [35] R.M. Pasquarelli, D.S. Ginley, and R. O’Hayre, Chem. Soc. Rev. 40, 5406 (2011).
  • [34] T. Kamiya, K. Nomura, and H. Hosono, J. Disp. Technol. 5, 273 (2009).
    5 , 273 ( [2009]
  • [33] M. Li, J. Zheng, H. Xu, Z. Wang, Q. Wu, B. Huang, H. Zhou, andC. Liu, Adv. Mater. Interfaces 5, 1 (2018).
    5 , 1 ( [2018]
  • [32] T. Kamiya, K. Nomura, H. Hosono, Phys. Status Solidi A 206, 860 (2009).
    206 , 860 ( [2009]
  • [31] Y. Kim, M. Bae, W. Kim, D. Kong, H. K. Jung, H. Kim, S. Kim, D. M. Kim, D. H. Kim, IEEE Trans. Electron Devices 59, 2689 (2012).
    59 , 2689 ( [2012]
  • [30] T. Kamiya, K. Nomura, M. Hirano, H. Hosono, Phys. Status SolidiC 5, 3098 (2008).
    5 , 3098 ( [2008]
  • [2] S.Y. Park, B.J. Kim, K. Kim, M.S. Kang, K.H. Lim, T. Il Lee, J.M. Myoung, H.K. Baik, J.H.Cho, and Y.S. Kim, Adv. Mater. 24, 834 (2012).
    24 , 834 ( [2012]
  • [2] P.K. Nayak, Z. Wang, and H.N. Alshareef, Adv. Mater. 28, 7736 (2016).
    28 , 7736 ( [2016]
  • [2] K.-H. Lim, K. Kim, S. Kim, S.Y. Park, H. Kim, and Y.S. Kim, Adv. Mater. 25, 2994 (2013).
    25 , 2994 ( [2013]
  • [29] M. Benwadih, J. Chroboczek, G. Ghibaudo, R. Coppard, D. Vuillaume, J. Appl. Phys. 115, 214501 (2014).
  • [28] T.-M. Pan, B.-J. Peng, J.-L. Her, B.-S. Lou, IEEE Trans. Electron Devices 64, 2233 (2017).
    64 , 2233 ( [2017]
  • [28] T. Sekitani, U. Zschieschang, H. Klauk, and T. Someya, Nat. Mater. 9, 1015 (2010).
  • [27] K.-H. Lim, K. Kim, S. Kim, S.Y. Park, H. Kim, and Y.S. Kim, Adv. Mater. 25, 2994 (2013).
    25 , 2994 ( [2013]
  • [27] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).
    432 , 488 ( [2004]
  • [27] D.K. Schroder, Semiconductor Material and Device Characterization: Third Edition (2005).
  • [26] Y.S. Rim, H.Chen, T. Bin Song, S.H. Bae, and Y. Yang,Chem. Mater. 27, 5808 (2015).
    27 , 5808 ( [2015]
  • [26] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science (80-. ). 300, 1269 (2003).
    300 , 1269 ( [2003]
  • [26] C.E. Kim, P. Moon, S. Kim, J.M. Myoung, H.W. Jang, J. Bang, and I. Yun, Thin Solid Films 518, 6304 (2010).
    6304 ( [2010]
  • [25] T. Kamiya and H. Hosono, NPG Asia Mater. 2, 15 (2010).
  • [25] J. Van den Brand, W.G. Sloof, H. Terryn, and J.H.W. De Wit, Surf. Interface Anal. 36, 81 (2004).
    36 , 81 ( [2004]
  • [25] J. Socratous, K.K. Banger, Y. Vaynzof, A. Sadhanala, A.D. Brown, A. Sepe, U. Steiner, and H. Sirringhaus, Adv. Funct. Mater. 25, 1873 (2015).
  • [24] J.E. Huh, J. Park, J. Lee, S.E. Lee, J. Lee, K.H. Lim, and Y.S. Kim, J. Ind. Eng.Chem. 68, 117 (2018).
    68 , 117 ( [2018]
  • [24] H. Hosono, J. Non. Cryst. Solids 352, 851 (2006).
  • [24] B.E. Sernelius, K.F. Berggren, Z.C. Jin, I. Hamberg, and C.G. Granqvist, Phys. Rev. B 37, 10244 (1988).
  • [23] R. Chen and L. Lan, Nanotechnology 30, (2019) 312001.
  • [23] J. Lü, J. Dai, J. Zhu, X. Song, and Z. Sun, J. Wuhan Univ. Technol. Sci. Ed. 26, 23 (2011).
    26 , 23 ( [2011]
  • [23] A. Hasegawa, T. Tanno, S. Nogami, and M. Satou, J. Nucl. Mater. 417, 491 (2011).
  • [22] S.W. Xue, X.T. Zu, W.L. Zhou, H.X. Deng, X. Xiang, L. Zhang, and H. Deng, J. AlloysCompd. 448, 21 (2008).
    448 , 21 ( [2008]
  • [22] K.K. Banger, Y. Yamashita, K. Mori, R.L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, Nat. Mater. 10, 45 (2011).
  • [22] B. Il Nam, J.S. Park, K.H. Lim, Y.K. Ahn, J. Lee, J.W. Park, N.K.Cho, D. Lee, H.B.R. Lee, and Y.S. Kim, Appl. Phys. Lett. 111, (2017).
    111 , ( [2017]
  • [21] T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 90, 1 (2007).
  • [21] K.-H. Lim, J. Lee, J.-E. Huh, J. Park, J.-H. Lee, S.-E. Lee, and Y.S. Kim, J. Mater.Chem.C 5, 7768 (2017).
    5 , 7768 ( [2017]
  • [21] F.C.Chiu, Adv. Mater. Sci. Eng. 2014, (2014).
    '' [2014]
  • [20] M.G. Kim, M.G. Kanatzidis, A. Facchetti, and T.J. Marks, Nat. Mater. 10, 382 (2011).
  • [20] J.H. Park, Y.B. Yoo, K.H. Lee, W.S. Jang, J.Y. Oh, S.S.Chae, H.W. Lee, S.W. Han, and H.K. Baik, ACS Appl. Mater. Interfaces 5, 8067 (2013).
    5 , 8067 ( [2013]
  • [20] C.G. Lee, B. Cobb, and A. Dodabalapur, Appl. Phys. Lett. 97, 2008 (2010).
  • [1] E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012).
  • [19] W. Xu, H. Wang, F. Xie, J.Chen, H.Cao, and J. Bin Xu, ACS Appl. Mater. Interfaces 7, 5803 (2015).
    7 , 5803 ( [2015]
  • [19] M. Li, J. Zheng, H. Xu, Z. Wang, Q. Wu, B. Huang, H. Zhou, andC. Liu, Adv. Mater. Interfaces 5, 1 (2018).
    5 , 1 ( [2018]
  • [19] B.S. Kim and H.J. Kim, IEEE Trans. Electron Devices 63, 3558 (2016).
    63 , 3558 ( [2016]
  • [18] Y.J. Tak, F. Hilt, S. Keene, W.G. Kim, R.H. Dauskardt, A. Salleo, and H.J. Kim, ACS Appl. Mater. Interfaces 10, 37223 (2018).
    10 , 37223 ( [2018]
  • [18] W. Xu, H. Wang, L. Ye, and J. Xu, J. Mater.Chem.C 2, 5389 (2014).
    2 , 5389 ( [2014]
  • [18] P.K. Nayak, M.N. Hedhili, D.Cha, and H.N. Alshareef, Appl. Phys. Lett. 103, 033518 (2013).
    103 , 033518 ( [2013]
  • [17] W. E. Spear, P. G. Lecomber, Solid State Commun. 88, 1015 (1993)
  • [17] J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, and S. Il Kim, Appl. Phys. Lett. 90, 1 (2007).
    90 , 1 ( [2007]
  • [17] J. Zhuang, Q.J. Sun, Y. Zhou, S.T. Han, L. Zhou, Y. Yan, H. Peng, S. Venkatesh, W. Wu, R.K.Y. Li, and V.A.L. Roy, ACS Appl. Mater. Interfaces 8, 31128 (2016).
    8 , 31128 ( [2016]
  • [16] J. F. Wager, D. A. Keszler, and R. E. Presley, Transparent Electronics (Springer, New York, 2008)
  • [16] H. Pu, Q. Zhou, L. Yue, and Q. Zhang, Appl. Surf. Sci. 283, 722 (2013).
    283 , 722 ( [2013]
  • [15] J.S. Park, W.J. Maeng, H.S. Kim, and J.S. Park, Thin Solid Films 520, 1679 (2012).
    520 , 1679 ( [2012]
  • [15] J.S. Kim, M.K. Joo, M. Xing Piao, S.E. Ahn, Y.H.Choi, H.K. Jang, and G.T. Kim, J. Appl. Phys. 115, (2014).
    115 , ( [2014]
  • [15] I. Isakov, H. Faber, M. Grell, G. Wyatt-Moon, N. Pliatsikas, T. Kehagias, G.P. Dimitrakopulos, P.P. Patsalas, R. Li, and T.D. Anthopoulos, Adv. Funct. Mater. 27, 1 (2017).
  • [14] J. Park, J.E. Huh, S.E. Lee, J. Lee, W.H. Lee, K.H. Lim, and Y.S. Kim, ACS Appl. Mater. Interfaces 10, 30581 (2018).
    10 , 30581 ( [2018]
  • [14] E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012).
  • [13] X. Yu, T.J. Marks, and A. Facchetti, Nat. Mater. 15, 383 (2016).
  • [13] S.J. Heo, D.H. Yoon, T.S. Jung, and H.J. Kim, J. Inf. Disp. 14, 79 (2013).
    14 , 79 ( [2013]
  • [13] K.-H. Lim, K. Kim, S. Kim, S.Y. Park, H. Kim, and Y.S. Kim, Adv. Mater. 25, 2994 (2013).
    25 , 2994 ( [2013]
  • [12] T. Kamiya and H. Hosono, NPG Asia Mater. 2, 15 (2010).
  • [12] L. Keun Ho, H. Sun Woong, P. Jee Ho, Y. Young Bum, L. Se Jong, B. Hong Koo, and S. Kie Moon, Jpn. J. Appl. Phys. 55, 10304 (2016).
    55 , 10304 ( [2016]
  • [12] J. Park, J.E. Huh, S.E. Lee, J. Lee, W.H. Lee, K.H. Lim, and Y.S. Kim, ACS Appl. Mater. Interfaces 10, 30581 (2018).
    10 , 30581 ( [2018]
  • [11] T. Sekitani, U. Zschieschang, H. Klauk, and T. Someya, Nat. Mater. 9, 1015 (2010).
  • [11] T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 90, 1 (2007).
  • [11] K.H. Lim, J.E. Huh, J. Lee, N.K.Cho, J.W. Park, B. Il Nam, E. Lee, and Y.S. Kim, ACS Appl. Mater. Interfaces 9, 548 (2017)
    9 , 548 ( [2017]
  • [10] X. Yu, T.J. Marks, and A. Facchetti, Nat. Mater. 15, 383 (2016).
  • [10] P.N. Plassmeyer, G. Mitchson, K.N. Woods, D.C. Johnson, and C.J. Page, Chem. Mater. 29, 2921 (2017).
  • [10] K.H. Lim, J.E. Huh, J. Lee, N.K.Cho, J.W. Park, B. Il Nam, E. Lee, and Y.S. Kim, ACS Appl. Mater. Interfaces 9, 548 (2017).
    9 , 548 ( [2017]
  • M.J. Renn , T.P . Lodge , and C. Daniel Frisbie
    7 , 900 ( [2008]
  • B.N
    8 , 898 ( [2009]
  • A. Facchetti , and T.J. Marks
    22 , 1346 ( [2010]