연구동향 분석

PECVD TEOS 공정용 He/Ar 캐리어 가스의 비교 연구 = A comparative study of He/Ar Carrier Gas for PECVD TEOS Process

유청일 2020년

논문상세정보
    • 저자 유청일
    • 형태사항 26 cm
    • 일반주기 지도교수: 좌성훈
    • 학위논문사항 나노IT융합공학전공, 학위논문(박사)-, 서울과학기술대학교, 2020. 8
    • 발행지 서울
    • 언어 kor
    • 출판년 2020
    • 발행사항 서울과학기술대학교
    • 주제어 Carrier gas PECVD
    유사주제 논문( 59)
인용/피인용
' PECVD TEOS 공정용 He/Ar 캐리어 가스의 비교 연구 = A comparative study of He/Ar Carrier Gas for PECVD TEOS Process' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • Carrier gas
  • pecvd
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
61 0

0.0%

' PECVD TEOS 공정용 He/Ar 캐리어 가스의 비교 연구 = A comparative study of He/Ar Carrier Gas for PECVD TEOS Process' 의 참고문헌

  • ``Crystal ? melt partitioning of noble gases ( helium , neon , argon , krypton , and xenon ) for olivine andClinopyroxene ''
    71 , pp . 797 . [2007]
  • ``Comparison of He/O2 and Ar/O2 Atmospheric-Pressure Plasma for Photoresist Etching '' ,
    154 , pp . 422 . [2007]
  • ``Comparative Study Between Silicon-rich Oxide Films Obtained by LPCVD and PECVD ''
    38 , pp . 54 . [2007]
  • ``Comparative Evaluation of Gap-Fill Dielectrics in Shallow Trench Isolation for Sub-0.25 ym Technologies ''
    96 , pp . 841 . [1996]
  • Trench Storage Node Technology for Gigabit DRAM Generations ''
    96 , pp . 507 . [1996]
  • Three-dimensional simulation of a plasma jet with transverse particle andCarrier gas injection ''
    390 , pp . 175 [2001]
  • The StepCoverage of Undoped and Phosphorus-Doped Si02 Glass Films ''
    1 , pp . 1 . [1983]
  • Temperature Distribution in Semiconductor Wafers Heated in a Vertical Diffusion Furnace ''
    6 , pp . 226 [1993]
  • Structural Studies of TEOS-tetraethoxytitanate Based Hybrids ''
    27 , pp . 1523 . [2005]
  • Stress Hysteresis During ThermalCycling of Plasma-EnhancedChemical Vapor Deposited Silicon Oxide Films ''
    91 , pp . 4 . [2002]
  • Steric Effects in Electrolytes : A Modified Poisson-Boltzmann Equation ''
    79 , pp . 3 . [1997]
  • Single-Wafer Integrated Semiconductor Device Processing ''
    39 , pp.4 . [1992]
  • Residual Stress in Thin Films PECVD Depositions : A Review ''
    13 , pp . 4 . [2011]
  • Reaction Mechanisms of Plasmaand Thermal-AssistedChemical Vapor Deposition of Tetraethylorthosilicate Oxide Films ''
    137 , pp . 7 . [1990]
  • Properties ofCarbon Ion Deposited Tetrahedral AmorphousCarbon Films as a Function of Ion Energy ''
    79 , pp . 7234 [1996]
  • Plasma Deposition of Optical Films andCoatings : A review ''
    18 , pp . 6 [2000]
  • Physics of High-Pressure Helium and Argon Radio Frequency Lasmas ''
    96 , pp . 7011 . [2004]
  • Phosphorus-Doped Polycrystalline Silicon via LPCVD ''
    131 , pp . 10 [1984]
  • POROUSELEMENT FUEL WAPORIZER 'U.S. Patent Number : 5,836,289 .
    [1998]
  • Ongoing Ascent to the Helium Production Plateau—Insights from System Dynamics ''
    35 , pp . 77 . [2010]
  • On the Differences Between Ionizing Helium and Argon Plasmas at Atmospheric Pressure '' ,
    12 , pp . 30 [2003]
  • New Test Structure to Identify StepCoverage Mechanisms inChemical Vapor Deposition of Silicon Dioxide ''
    58 , pp . 2147 [1991]
  • Model-basedControl for Semiconductor and Advanced Materials Processing : An Overview ''
    pp . 3902 [2004]
  • Mass Flow Measurement andControl of Low Vapor Pressure Sources ''
    7 , pp . 2387 [1989]
  • Liquid-Injection System Based on Mass FlowControllers ''
    pp . 149 . [1996]
  • LPCVD against PECVD for Micromechanical Applications ''
    6 , pp.1 . [1996]
  • LIQUID PUMP AND WAPORIZER '' , U.S. Patent Number : 5,361,800 . Lexington , Mass : U.S. Patent and MKS Instruments
    [1994]
  • Ion Bombardment in RF Plasmas '' ,
    68 , pp . 3916 . [1990]
  • High Temperature Passive Oxidation Mechanism ofCVD SiC ''
    pp . 27 [2006]
  • Formation of Hydrogen-Permselective SiO2 Membrane in Macropores of a-Alumina Support Tube by Thermal Decomposition of TEOS '' ,
    101 , pp . 89 . [1995]
  • Formation of Device Quality Si/Si02 Interfaces at Low Substrate Temperatures by Remote Plasma EnhancedChemical Vapor Deposition of Si02 ''
    8 , pp . 4 . [1990]
  • Factors Affecting Thickness Variation of SiO2 Thin Films Grown by Wet Oxidation ''
    24 , pp . 2 . [2011]
  • Effects of helium dilution of TEOS ? O2 ?C2F6 gas mixture on plasma-enhancedChemical vapor deposition of fluorine-doped silicon oxide film ''
    17 , pp . 425 . [1999]
  • Effects of Showerhead Hole Structure on the Deposition of Hydrogenated Microcrystalline Silicon Thin Films by vhf PECVD ''
    30 , pp . 4 . [2012]
  • Effects of Frequency on the Two-dimensional Structure ofCapacitivelyCoupled Plasma in Ar ''
    84 , pp . 5928 [1998]
  • Analysis of Water Diffusion Path Evolving From Silicon Dioxide and Its Influence on Transistor Hump ''
    53 , pp . 4 [2006]
  • An Overview of Manufacturing Yield and Reliability Modeling for Semiconductor Products ''
    87 , pp.8 [1999]
  • An Introduction to Thermal Physics ''
    67 , pp . 1284 [1999]
  • Air-Gap Formation During IMD Deposition to Lower InterconnectCapacitance ,
    19 , pp . 1 . [1998]
  • AComparative Study of Submicron Gap Filling and Planarization Techniques '' , Microelectronic Device and Multilevel Interconnection Technology
    pp . 277 . [1995]
  • A Study of TheCharacteristics of Organic-Norganic Hybrid Plasma-Polymer Thin Films byCo-Deposition of Toluene and TEOS ''
    17 , pp . 3 . [2010]
  • A Design Study for ThermalControl of aCVD Reactor for YBCO ''
    pp . 1194 . [1998]