논문상세정보
-
- 저자 박슬기
- 형태사항 116: 26 cm
- 일반주기 지도교수: 김오현
- 학위논문사항 학위논문(박사)-, 포항공과대학교 일반대학원, 전자전기공학과, 2020. 2
- 발행지 포항
- 언어 eng
- 출판년 2020
- 발행사항 포항공과대학교 일반대학원
- 주제어 graphene graphene growth graphenetransfer highcarriermobility
유사주제 논문( 227)
박사
A Study on Fabrication of High Performance Field Effect Transistor Based on CVD Graphene
박슬기
2020년
'
A Study on Fabrication of High Performance Field Effect Transistor Based on CVD Graphene' 의 주제별 논문영향력
| 주제 |
|
|
|---|---|---|
| 동일주제 총논문수 | 논문피인용 총횟수 | 주제별 논문영향력의 평균 |
| 231 | 0 |
0.0% |
주제별 논문영향력
' A Study on Fabrication of High Performance Field Effect Transistor Based on CVD Graphene' 의 참고문헌
-
¡°Transfer-free batch fabrication of single layer graphene transistors ,vol . 9 , no . 12 , pp . 4479–4483 [2009]
-
¡°Roll-to-roll production of 30-inch graphene films for transparent electrodesvol . 5 , no . 8 , pp . 574–578 [2010]
-
¡°Large-scale pattern growth of graphene films for stretchable transparent electrodesvol . 457 , no . 7230 , pp . 706–710 [2009]
-
¡°Large-area synthesis of high-quality and uniform graphene films onCopper foilsvol . 324 , no . 5932 , pp . 1312–1314 [2009]
-
¡°A roadmap for graphenevol . 490 , no . 7419 , pp . 192–200 [2012]
-
[7] DOW, “CYCLOTENE TM 3000 Series Advanced Electronics Resins,” Http://www.dow.com, pp. 1–10, 2012.
-
[12] K. Tadyszak, J. K. Wychowaniec, and J. Litowczenko, “Biomedical applications of graphene-based structures,” Nanomaterials, vol. 8, no. 11, pp. 1–20, 2018.
-
Ultrathin Epitaxial Graphite : 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronicsvol . 108 , no . 52 , pp . 19912–19916 [2004]
-
Ultrahigh electron mobility in suspended graphenevol . 146 , no . 9–10 , pp . 351–355 [2008]
-
Ultraconformal Contact Transfer of Monolayer Graphene on Metal to Various Substratesvol . 26 , no . 37 , pp . 6394–6400 [2014]
-
Tuning the dirac point in CVD-grown graphene through solution processed n-type doping with 2( 2-methoxyphenyl ) -1,3-dimethyl-2,3-dihydro-1 Hbenzoimidazolevol . 13 , no . 5 , pp . 1890–1897 [2013]
-
The rise and rise of graphenevol . 5 , no . 11 , p. 755 [2010]
-
Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer depositionvol . 100 , no . 17 [2012]
-
Spontaneous pattern transfer and selective growth of graphene on aCu foilvol . 82 , pp . 238–244 [2015]
-
Site-selective epitaxy of graphene on si wafers ,vol . 101 , no . 7 , pp . 1557–1566 [2013]
-
Selective growth of uniform single-layer graphene onCu foil and fabrication of damage-free field effect transistorCombining with direct transfervol . 37 , no . 4 , p. 041207 [2019]
-
Selective growth of uniform singlelayer graphene onCu foil and fabrication of damage-free field effectI.Introduction transistorCombining with direct transfervol . 37 , no . 4 , p. 041207 [2019]
-
Screening and InterlayerCoupling in Multilayer Graphene Field-Effect Transistorsvol . 9 , no . 8 , pp . 2973–2977 [2009]
-
SCS Parylene Properties
-
Roles of H2 in annealing and growth times of grapheneCVD synthesis overCopper foilvol . 2 , no . 38 , pp . 16208–16216 [2014]
-
Role of hydrogen inChemical vapor deposition growth of large single-crystal graphenevol . 5 , no . 7 , pp . 6069–6076 [2011]
-
Role of hydrogen in grapheneChemical vapor deposition growth on aCopper surfacevol . 136 , no . 8 , pp . 3040–3047 [2014]
-
Role of Hydrogen in GrapheneChemical Vapor Deposition Growth onCopper Surfaceno . Cvd , pp . 1–6 [2013]
-
Robust electromagnetic absorption by graphene/polymer heterostructuresvol . 26 , no . 28 [2015]
-
Rigid substrate process to achieve high mobility in graphene fieldeffect transistors on a flexible substratevol . 68 , pp . 791–797 [2014]
-
Residual metallicContamination of transferredChemical vapor deposited graphenevol . 9 , no . 5 , pp . 4776–4785 [2015]
-
Realization of a high mobility dual-gated graphene fieldeffect transistor with Al2O3 dielectricvol . 94 , no . 6 [2009]
-
Process optimization for synthesis of high-quality graphene films by low-pressureChemical vapor depositionvol . 51 , no . 6 PART 2 , pp . 1–4 [2012]
-
PMMA-Etching-Free Transfer of Wafer-scaleChemical Vapor Deposition Two-dimensional AtomicCrystal by a Water Soluble Polyvinyl Alcohol Polymer Methodvol . 6 , no . May , pp . 1–9 , [2016]
-
Oxygen-activated growth and bandgap tunability of large singlecrystal bilayer graphenevol . 11 , no . 5 , pp . 426–431 [2016]
-
One-Dimensional Electrical Contact to a Two-Dimensional Materialvol . 342 , no . 6158 , pp . 614–617 [2013]
-
Mobility variations in monoand multi-layer graphene filmsvol . 2 , no . 2 , pp . 11–14 [2009]
-
Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substratevol . 8 , no . 5 , pp . 5079–5088 [2014]
-
Mechanisms of graphene growth by chemical vapour deposition on transition metalsvol . 70 , pp . 1–21 [2014]
-
Low-κ organic layer as a top gate dielectric for graphene field effect transistors ,vol . 100 , no . 19 [2012]
-
Large area , few-layer graphene films on arbitrary substrates by chemical vapor depositionvol . 9 , p. 30 [2009]
-
Interface engineering for high performance graphene electronic devicesvol . 2 , no . 1 , p. 11 [2015]
-
Hydroxyl-free buffered dielectric for graphene field-effect transistorsvol . 86 , pp . 264–271 [2015]
-
High mobility flexible graphene field-effect transistors with self-healing gate dielectrics ,vol . 6 , no . 5 , pp . 4469–4474 [2012]
-
High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits ,vol . 7 , no . 25 , pp . 10954–10962 [2015]
-
High carrier mobility in suspended-channel graphene field effect transistorsvol . 103 , no . 19 [2013]
-
Graphene in the sky and beyondvol . 9 , no . 10 , pp . 745–747 [2014]
-
Graphene for VLSI : FET and interconnect applicationspp . 1–4 [2009]
-
Graphene field effect transistors with parylene gate dielectric ,vol . 95 , no . 24 , p. 242104 [2009]
-
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristicsvol . 26 , no . 47 [2015]
-
Graphene and graphene oxide as nanomaterials for medicine and biology applicationvol . 8 , no . 2 , pp . 123–137 [2018]
-
Graphene : An emerging electronic materialvol . 24 , no . 43 , pp . 5782–5825 [2012]
-
Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealingvol . 109 , no . 15 , p. 152105 [2016]
-
First-principles calculation of thermal transport in metal/graphene systemsvol . 87 , no . 16 , pp . 1–7 [2013]
-
Face-to-face transfer of wafer-scale graphene filmsvol . 505 , no . 7482 , pp . 190–194 [2014]
-
Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurementvol . 102 , no . 17 , pp . 1–5 [2013]
-
Enhanced photolithography with Al film insertion for large-scale patterning of CVD graphene ,vol . 8 , no . 8 , p. 2403 [2018]
-
Encapsulation of graphene in Parylene ,vol . 110 , no . 5 [2017]
-
Electronic doping and scattering by transition metals on graphenevol . 80 , no . 7 , pp . 1–5 [2009]
-
Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor depositionvol . 94 , pp . 369–377 [2015]
-
Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors ,vol . 82 , no . 11 , pp . 1–7 [2010]
-
Doping Graphene with Metal Contactsvol . 101 , no . 2 , pp . 4–7 [2008]
-
Domain size , layer number and morphology control for graphene grown by chemical vapor depositionvol . 10 , no . 4 [2017]
-
Direct transfer of Wafer-scale graphene filmsvol . 4 , no . 3 , p. aa780d [2017]
-
Comparison of mobility extraction methods based on field-effect measurements for graphenevol . 5 , no . 5 [2015]
-
Barrier-guided growth of micro- and nano-structured graphenevol . 24 , no . 8 , pp . 1041–1045 [2012]
-
All-graphene-battery : Bridging the gap between supercapacitors and lithium ion batteriesvol . 4 , pp . 1–8 [2014]
-
Adsorptive removal of antibiotics from aqueous solution using carbon materialsvol . 153 , pp . 365– 385 [2016]
-
A self-consistent theory for graphene transportvol . 104 , no . 47 , pp . 18392– 18397 [2007]
-
A review of theoretical study of graphene chemical vapor deposition synthesis on metals : Nucleation , growth , and the role of hydrogen and oxygenvol . 81 , no . 3 [2018]
-
A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistorsvol . 7 , no . 9 , pp . 4013–4019 [2015]
-
A comparison of thin film polymers for wafer level packagingno . Figure 2 , pp . 769–776 [2010]
-
25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheetsvol . 7 , no . 9 , pp . 7744–7750 [2013]