박사
Hybrid Slurry Supply System Using Ionization and Atomization for Sustainable CMP = 지속 가능한 CMP를 위한 분무 및 이온화 기능을 갖춘 하이브리드 슬러리 공급시스템
이다솔
2020년
'
Hybrid Slurry Supply System Using Ionization and Atomization for Sustainable CMP = 지속 가능한 CMP를 위한 분무 및 이온화 기능을 갖춘 하이브리드 슬러리 공급시스템' 의 주제별 논문영향력
| 주제 |
|
|
|---|---|---|
| 동일주제 총논문수 | 논문피인용 총횟수 | 주제별 논문영향력의 평균 |
| 248 | 0 |
0.0% |
주제별 논문영향력
' Hybrid Slurry Supply System Using Ionization and Atomization for Sustainable CMP = 지속 가능한 CMP를 위한 분무 및 이온화 기능을 갖춘 하이브리드 슬러리 공급시스템' 의 참고문헌
-
``Combined study onConductive AFM and damascene process to visualize Nano-Scaled defects inCr thin films on polymer substrateVol . 11 , No . 1 , pp . 164-169 [2015]
-
``Classification and Production Methods ofCMP Slurriespp . 152-154 [2011]
-
``Chemical mechanical polishing for fabricating patterned W metal features asChip interconnectsVol . 138 , No . 11 , pp . 3460-3465 [1991]
-
``Chemical mechanical planarization ofCopper bumps on printedCircuit boardVol . 12 , No . 1 , pp . 149-152 [2011]
-
``Chemical mechanical planarization of advanced package substrate byControlling selectivity ofCopper to polymerVol . 32 , No . 8 , pp . 3843-3848 [2018]
-
``Chemical and Mechanical Balance in Polishing of Electronic Materials for Defect-Free SurfacesVol . 58 , pp . 485-490 [2009]
-
``Chemical Mechanical Polishing of SiC Substrate Using Enhanced SlurryContaining Nanobubbles with Active Gas Generated by Plasmapp . 1-5 [2017]
-
``Chemical Mechanical Polishing of Mo using H2O2 as Oxidizer inColloidal Silica Based Slurries ,Vol . 6 , No . 7 , pp . P470-P476 [2017]
-
``Chemical Mechanical Polishing as Enabling Technology for Sub-14nm Logic Device ,[2013]
-
``Chemical Mechanical Polishing : A Selective Review of R D Trends in Abrasive Particle Behaviors and Wafer MaterialsVol . 35 , No . 5 , pp . 274-285 , [2019]
-
``Charged micelle halo mechanism for agglomeration reduction in metal oxide particle based polishing slurriesVol . 447 , pp . 32-43 [2014]
-
``CMP slurry technology and market trendVol . 20 , pp . 30-35 [2017]
-
``CMP pad break-in time reduction in silicon wafer polishingVol . 56 , No . 1 , pp . 357-360 [2007]
-
[97] K. DoymuŞ, "The effect of ionic electrolytes and pH on the zeta potential of fine coal particles," Turkish Journal of Chemistry, Vol. 31, No. 6, pp. 589-597, 2007.
-
[93] L. Weijuan and L. Yuling, "Synergic effect of chelating agent and oxidant on chemical mechanical planarization," Journal of Semiconductors, Vol. 36, No. 2, p. 026001, 2015.
-
[85] J. Luo and D. A. Dornfeld, "Material removal mechanism in chemical mechanical polishing: theory and modeling," IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 2, pp. 112-133, 2001.
-
[76] D. Zhao and X. Lu, "Chemical mechanical polishing: theory and experiment,Friction, Vol. 1, No. 4, pp. 306-326, 2013.Vol . 1 , No . 4 , pp . 306-326 [2013]
-
[51] O. Kirino and T. Enomoto, "Ultra-flat and ultra-smooth Cu surfaces produced by abrasive-free chemical–mechanical planarization/polishing using vacuum ultraviolet light," Precision Engineering, Vol. 35, No. 4, pp. 669-676, 2011.
-
[1] M. Krishnan and M. Lofaro, "Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond," Advances in Chemical Mechanical Planarization (CMP), Elsevier, pp. 27-46, 2016.
-
[19] S. Crawford and S. Aravamudhan, "Environmental Impact and Speciation Analysis of Chemical Mechanical Planarization (CMP) Waste Following GaAs Polishing," ECS Transactions, Vol. 80, No. 2, pp. 171-179, 2017.
-
[147] H. Lee, "Effect of Citric Acid in Cu Chemical Mechanical Planarization Slurry on Frictional Characteristics and Step Height Reduction of Cu Pattern," Tribology and Lubricants, Vol. 34, No. 6, pp. 226-234, 2018.
-
[140] E. Terrell and C. Higgs, "Hydrodynamics of Slurry Flow in Chemical Mechanical Polishing A Review," Journal of The Electrochemical Society, Vol. 153, No. 6, pp. K15-K22, 2006.
-
[137] J. Lundberg and O. M. Lysaker, "An optimization framework for tracking droplets in fire water spray images," Proceedings of the 56th Conference on Simulation and Modelling (SIMS 56), pp. 331-337, 2015.
-
[136] N.Crawford, S. K. Williams, D. Boldridge, and M. Liberatore, "Shear thickening ofChemical mechanical polishing slurries under high shear,Rheologica Acta, Vol. 51, No. 7, pp. 637-647, 2012.Vol . 51 , No . 7 , pp . 637-647 [2012]
-
[125] J. Luo and D. Dornfeld, "Integrated modeling of chemical mechanical planarization for submicron IC fabrication: from particle scale to feature, die and wafer scales," Springer Science & Business Media, pp. 89, 2013.
-
[123] H. Schumacher, U. Kuenzelmann, and J. W. Bartha, "Characterization of Surface Processes During Oxide CMP by in situ FTIR Spectroscopy with Microstructured Reflection Elements at Silicon Wafers," MRS Online Proceedings Library Archive, Vol. 1249, 2010.
-
Wafer size effect on material removal rate inCopperCMP processVol . 31 , No . 6 , pp . 2961-2964 [2017]
-
UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing ( CMP )Vol . 316 , pp . 643-648 [2014]
-
Tribo-electrochemicalCharacterization of Ru , Ta andCuCMP systems using percarbonate based solutionsVol . 4 , No . 11 , pp . P5058-P5067 [2015]
-
The ionic strength dependent zeta potential at the surface of hexadecane droplets in water and theCorresponding interfacial adsorption of surfactantsVol . 13 , No . 3 , pp . 638-646 [2017]
-
The influence of abrasive size on high-pressureChemical mechanical polishing of sapphire waferVol . 2 , No . 2 , pp . 157-162 [2015]
-
The effects of a spray slurry nozzle on copper CMP for reduction in slurry consumptionVol . 29 , No . 12 , pp . 5057- 5062 [2015]
-
The Effect of PVA Brush Scrubbing on PostCMPCleaning Process for DamasceneCu Interconnection ,pp . 367-370 [2009]
-
The Adsorption Behaviors ofCitric Acid on Abrasive Particles inCuCMP Slurry ,Vol . 867 [2005]
-
Temperature effects of padConditioning process on oxideCMP : Polishing pad , slurryCharacteristics , and surface reactionsVol . 83 , No . 2 , pp . 362-370 [2006]
-
Temperature distribution in polishing pad duringCMP process : Effect of retaining ring ,Vol . 13 , No . 1 , pp . 25-31 [2012]
-
Synthesis andCharacterization ofCopper Nanoparticles (Cu-Nps ) using Rongalite as Reducing Agent and Photonic Sintering ofCu-Nps Ink for Printed ElectronicsVol . 5 , No . 2 , pp . 239-245 [2018]
-
Suspension stability ; why particle size , zeta potential and rheology are importantVol . 20 , pp . 209- 214 [2012]
-
SurfaceChemistry studies ofCopperChemical mechanical planarization ,Vol . 148 , No . 7 , pp . G389- G397 [2001]
-
Surface-complex films of guanidine on tantalum nitride electrochemicallyCharacterized for applications inChemical mechanical planarizationVol . 520 , No . 7 , pp . 2892-2900 [2012]
-
Surface Activation by Electrolytically Ionized Slurry duringCuCMP ,Vol . 8 , No . 5 , pp . P3053-P3057 [2019]
-
Study on innovative plasma fusionCMP and its application to processing of diamond substrate[2015]
-
Structural effect of PVA brush nodule on particle removal efficiency during brush scrubberCleaning ,pp . 84-89 [2012]
-
SlurryComponents in metalChemical mechanical planarization (CMP ) process : A reviewVol . 17 , No . 12 , pp . 1751-1762 [2016]
-
Slurry transport duringChemical mechanical polishingVol . 44 , No . 11R , pp . 7843 [2005]
-
Slurry injection schemes on the extent of slurry mixing and availability duringChemical Mechanical PlanarizationVol . 8 , No . 6 , p. 170 [2017]
-
Slurry Supply Mechanism UtilizingCapillary Effect inChemical Mechanical PlanarizationVol . 8 , No . 5 , pp . P3069-P3074 [2019]
-
Signal analysis ofCMP process based on AE monitoring systemVol . 2 , No . 1 , pp . 15-19 [2015]
-
Semi-empirical material removal rate distribution model for SiO2Chemical mechanical polishing (CMP ) processesVol . 37 , No . 2 , pp . 483-490 [2013]
-
Self-dressing effect using a fixed abrasive platen for single-sided lapping of sapphire substrate ,Vol . 31 , No . 12 , pp . 5649-5655 [2017]
-
Role of ionic strength inChemical mechanical polishing of siliconCarbide using silica slurriesVol . 445 , pp . 119-127 [2014]
-
Role of interparticle forces during stress-induced agglomeration ofCMP slurriesVol . 389 , No . 1-3 , pp . 33-37 [2011]
-
Removal Mechanism of TungstenCMP Process : Effect of Slurry AbrasiveConcentration and Process TemperatureVol . 41 , No . 43 , pp . 103-111 [2012]
-
Reduction of the Maximum Step Height on a Package Substrate by the Optimization of SlurryChemical Additives ,Vol . 20 , No . 6 , pp . 1-9 [2019]
-
Process performance prediction forChemical mechanical planarization (CMP ) by integration of nonlinear Bayesian analysis and statistical modelingVol . 23 , No . 2 , pp . 316-327 [2010]
-
Preparation of SiC/SiO2 HardCore–Soft Shell Abrasive and ItsCMP Behavior on Sapphire Substratepp . 1-7 [2019]
-
Preparation andCharacterization of slurry forChemical mechanical planarization (CMP )Advances inChemical Mechanical Planarization (CMP )pp . 273- 298 [2016]
-
Preliminary study on the effect of spray slurry nozzle inCMP for environmental sustainabilityVol . 15 , No . 6 , pp . 995-1000 [2014]
-
Preface for the special issue of hybrid manufacturing ,Vol . 3 , No . 2 , pp . 145-145 [2016]
-
Prediction of realContact area from microtopography onCMP padVol . 6 , No . 1 , pp . 113-120 [2012]
-
Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane–CeO2Core–shell particlesVol . 114 , pp . 1-7 [2017]
-
Planarization of wafer edge profile inChemical mechanical polishingVol . 14 , No . 1 , pp . 11-15 [2013]
-
Planarization modeling based onContact mode between pad asperity and oxide pattern duringCMPVol . 36 , No . 4 , pp . 363-372 , [2019]
-
Pad roughness variation and its effect on material removal profile inCeria-basedCMP slurry ,Vol . 203 , No . 1-3 , pp . 287-292 [2008]
-
Optimization of the physicalCleaningCondition for nanotechnologyVol . 60 , No . 1 , pp . 579-582 [2011]
-
Novel slurry solution for dishing elimination inCopper process beyond 0.1-μm technologyVol . 498 , No . 1-2 , pp . 50-55 [2006]
-
Novel slurry injection system for improved slurry flow and reduced defects inCMPpp . 143-147 [2015]
-
New polishing method using water-based slurry under AC electric field for glass substrateVol . 323 , No . 10 , pp . 1394-1397 [2011]
-
Nanoscratch of aluminum in dry , water and aqueous H2O2ConditionsVol . 464 , pp . 229-235 [2019]
-
Nanoindentation and deformation behaviors of siliconCovered with amorphous SiO2 : a molecular dynamic studyVol . 8 , No . 23 , pp . 12597-12607 [2018]
-
MultilayerCMP hotspot modeling through deep learning ,Vol . 109620U , [2019]
-
Modeling ofChemical-mechanical polishing with soft pads ,Vol . 67 , No . 2 , pp . 249-252 [1998]
-
Microscopic grinding effects on fabrication of ultra-fine micro tools ,Vol . 56 , No . 1 , pp . 569-572 [2007]
-
Method for ultra rapid determination of the lubrication mechanism inChemical mechanical planarization ,Vol . 6 , No . 1 , pp . P32-P37 [2017]
-
Mechanism of GaNCMP based on H2O2 slurryCombined with UV lightVol . 4 , No . 3 , pp . P112-P117 [2015]
-
Mechanical aspects of theChemical mechanical polishing process : a reviewVol . 17 , No . 4 , pp . 525-536 [2016]
-
Mean Residence Time and Dispersion Number Associated with Slurry Injection Methods inChemical Mechanical PlanarizationVol . 5 , No . 3 , pp . P155-P159 [2016]
-
Mathematical modeling of material removal rate in roll-type linearCMP ( roll-CMP ) process : Effect of polishing padVol . 17 , No . 4 , pp . 495-501 [2016]
-
Mathematical model-based evaluation methodology for environmental burden ofChemical mechanical planarization processVol . 1 , No . 1 , pp . 11-15 [2014]
-
Manufacturing science and technology in Korea-PolishingVol . 36 , No . 12 , pp . 1101-1105 , [2019]
-
Macroscopic and microscopic investigation onChemical mechanical polishing of sapphire waferVol . 12 , No . 2 , pp . 1256-1259 [2012]
-
M. A. Fury , and L. Shon-Roy , `` The era of IoT advancing CMP consumables growth[2015]
-
LocalCorrosion of the oxide passivation layer duringCuChemical mechanical polishing ,Vol . 12 , No . 12 , pp . H433-H436 [2009]
-
Local/global planarization of polysilicon micropatterns by selectivityControlledCMPVol . 10 , No . 3 , pp . 31-36 [2009]
-
Laser-assistedCMP forCopper waferpp . 351-360 [2005]
-
Laser-AssistedChemical Polishing of Silicon ( 112 ) Wafers ,Vol . 41 , No . 10 , pp . 2790-2794 [2012]
-
Kinetics and mechanism ofChlorate-chloride reactionVol . 23 , No . 8 , pp . 1543-1550 [2012]
-
Kinematical modeling of pad profile variation duringConditioning inChemical mechanical polishingVol . 48 , No . 12R , pp . 126502 [2009]
-
K. Jang , J . Song , H. Rodrigue , and D. Chun , `` From design for manufacturing ( DFM ) to manufacturing for design ( MFD ) via hybrid manufacturing and smart factory :of Precision Engineering and Manufacturing-Green Technology , Vol . 3 , [2016]
-
Investigation of polishingCharacteristics of shallow trench isolationChemical mechanical planarization with different types of slurriesVol . 84 , No . 4 , pp . 626-630 [2007]
-
Investigation of pad wear inCMP with swing-armConditioning and uniformity of material removalVol . 49 , pp . 85-91 [2017]
-
Interconnect Tutorial : AComplexpp . 9 [2018]
-
Influence of slurryComponents on uniformity inCopperChemical mechanical planarizationVol . 85 , No . 4 , pp . 689-696 [2008]
-
Inferences of Slurry Bow Wave Width from MeanCoefficient of Friction and Directivity inChemical Mechanical Planarization ,Vol . 8 , No . 5 , pp . P3018-P3021 [2019]
-
Improvement of BarrierCMP Performance with Alkaline Slurry : Role of Ionic StrengthVol . 7 , No . 9 , pp . P462-P467 [2018]
-
Heat and its effects toChemical mechanical polishingVol . 178 , No . 1-3 , pp . 82-87 [2006]
-
Friction laws at the nanoscaleVol . 457 , No . 7233 , p. 1116 [2009]
-
Finite element analysis on dynamic viscoelasticity ofCMP polishing padVol . 36 , No . 2 , pp . 177-181 , [2019]
-
Evaluation of oxide-chemical mechanical polishing characteristics using ceria-mixed abrasive slurryVol . 8 , No . 5 , pp . 523-528 [2012]
-
Evaluation of environmental impacts duringChemical mechanical polishing (CMP ) for sustainable manufacturingVol . 27 , No . 2 , pp . 511-518 [2013]
-
Estimating the mechanical properties of polyurethane-impregnated felt padsVol . 31 , No . 12 , pp . 5705-5710 [2017]
-
Environmental impact ofConcentration of slurryComponents in thickCopperCMPVol . 4 , No . 1 , pp . 13-18 [2017]
-
Electrochemical mechanical polishing technology : recent developments and future research and industrial needsVol . 86 , No . 5-8 , pp . 1909-1924 [2016]
-
Electrochemical Analysis of the SlurryComposition forChemical Mechanical Polishing of Flexible Stainless-Steel Substrates ,Vol . 38 , No . 6 , pp . 482-489 [2017]
-
Effects of slurry inCuChemical mechanical polishing (CMP ) of TSVs for 3-D IC integration ,Vol . 2 , No . 6 , pp . 956-963 [2012]
-
Effects of slurry flow rate and padConditioning temperature on dishing , erosion , and metal loss duringCopperCMPVol . 153 , No . 5 , pp . G372-G378 [2006]
-
Effects of pad temperature on theChemical mechanical polishing of tungstenVol . 3 , No . 10 , pp . P310-P314 [2014]
-
Effects of friction energy on polishing results inCMP processVol . 28 , No . 11 , pp . 1807-1812 , [2004]
-
Effects of atmosphere and ultraviolet light irradiation onChemical mechanical polishingCharacteristics of SiC wafers ,Vol . 51 , No . 5S , pp . 05EF05 [2012]
-
Effects of Temperature on Removal Rate in Cu CMPVol . 17 , No . 6 , pp . 91-97 [2018]
-
Effect on two-step polishing process of electrochemical mechanical planarization andChemical–mechanical planarization on planarizationVol . 48 , No . 6R , pp . 066512 [2009]
-
Effect ofCurrent Density on Material Removal inCu ECMP ,Vol . 31 , No . 3 , pp . 79-85 , [2015]
-
Effect ofComplexing AgentChoices on DishingControl Level and the Shelf Life inCopperCMP SlurryVol . 7 , No . 8 , pp . P391-P396 [2018]
-
Effect ofCeria abrasives on planarization efficiency in STICMP processVol . 19 , No . 7 , pp . 51-59 , [2009]
-
Effect of wafer size on material removal rate and its distribution inChemical mechanical polishing of silicon dioxide filmVol . 27 , No . 10 , pp . 2911-2916 [2013]
-
Effect of slurry flow in spray slurry nozzle system onCuCMPVol . 34 , No . 2 , pp . 100- 105 [2017]
-
Effect of processConditions on uniformity of velocity and wear distance of pad and wafer duringChemical mechanical planarizationVol . 33 , No . 1 , pp . 53-60 [2004]
-
Effect of process parameters on friction force and material removal in oxideChemical mechanical polishingVol . 47 , No . 12R , p. 8771 [2008]
-
Effect of pad groove geometry on material removalCharacteristics inChemical mechanical polishingVol . 13 , No . 2 , pp . 303-306 [2012]
-
Effect of pad groove design on slurry injection scheme during interlayer dielectricChemical mechanical planarizationVol . 4 , No . 7 , pp . P272-P276 [2015]
-
Effect of mixing ratio of non-spherical particles inColloidal silica slurry on oxideCMPVol . 18 , No . 10 , pp . 1333-1338 [2017]
-
Effect of ionic strength on rutheniumCMP in H2O2-based slurriesVol . 317 , pp . 332-337 [2014]
-
Effect of hydrogen peroxide and oxalic acid on material removal in AlCMPVol . 34 , No . 5 , pp . 307- 310 , [2017]
-
Effect of heat according to wafer size on the removal rate and profile inCMP processVol . 9 , No . 6 , pp . 755-758 [2013]
-
Effect of glycine onCopperCMPVol . 3 , No . 2 , pp . 155- 159 [2016]
-
Effect of dilutedColloidal silica slurry mixed withCeria abrasives onCMPCharacteristic ,Vol . 3 , No . 1 , pp . 13-17 [2016]
-
Effect of additives for higher removal rate in lithium niobateChemical mechanical planarizationVol . 256 , No . 6 , pp . 1683-1688 [2010]
-
Effect of Relative SurfaceCharge ofColloidal Silica and Sapphire on Removal Rate inChemical Mechanical PolishingVol . 6 , No . 2 , pp . 339- 347 [2019]
-
Effect of Contact Angle between Retaining Ring and Polishing Pad on Material Removal Uniformity in CMP ProcessVol . 14 , No . 9 , pp . 1513-1518 [2013]
-
Development of ion-shot dressing grinding system ,Vol . 53 , No . 6 , pp . 356-361 [2009]
-
Development of intelligent pad monitoring system and application to analysis of pressure distribution inChemical mechanical polishing processVol . 15 , No . 9 , pp . 2005-2009 [2014]
-
Development of greenCMP by slurry reduction throughControlling platenCoolant temperature ,Vol . 2 , No . 4 , pp . 339-344 [2015]
-
Determining the effects of slurry surfactant , abrasive size , and abrasiveContent on the tribology and kinetics ofCopperCMPVol . 152 , No . 4 , pp . G299-G304 [2005]
-
Design and performance of aControlled atmosphere polisher for siliconCrystal polishingVol . 7 , No . 8 , pp . G158-G160 [2004]
-
BEOLCuCMP process evaluation for advanced technology nodes ,Vol . 160 , No . 12 , pp . D3247-D3254 [2013]
-
Atomistic scale nanoscratching behavior of monocrystallineCu influenced by water film inCMP processVol . 435 , pp . 983-992 [2018]
-
Atomistic mechanisms ofCuCMP in aqueous H2O2 : Molecular dynamics simulations using ReaxFF reactive force fieldVol . 155 , pp . 476-482 [2018]
-
Application of Neural Network-Based Oxide Deposition Models toCMP ModelingVol . 8 , No . 5 , pp . P3154-P3162 [2019]
-
Applicability of dynamic mechanical analysis forCMP polyurethane pad studiesVol . 49 , No . 2 , pp . 177-186 [2002]
-
Analytical study of contact stress on wafer edge in CMPVol . 35 , No . 2 , pp . 157- 161 [2018]
-
Analysis of pressure distribution and verification of pressure signal byChanges load and velocity inChemical mechanical polishingVol . 16 , No . 6 , pp . 1061-1066 [2015]
-
Ammonium-saltadded silica slurry for theChemical mechanical polishing of the interlayer dielectric film planarization in ULSI 'sVol . 34 , No . 2S , p. 1037 [1995]
-
Adaptive neuro-fuzzy inference system modeling of MRR and WIWNU inCMP process with sparse experimental dataVol . 5 , No . 1 , pp . 71-83 [2008]
-
Abrasive forChemical Mechanical Polishing , Abrasive Technology :Characteristics and Applicationspp . 183-201 [2018]
-
A method forCharacterizing the pad surface texture and modeling its impact on the planarization inCMPVol . 104 , pp . 48-57 , [2013]
-
A method for direct measurement of substrate temperature duringCopperCMPVol . 152 , No . 7 , pp . G537-G541 [2005]
-
, Effect of Retaining Ring Slot Designs ,Conditioning Discs andConditioning Schemes on the Slurry Bow Wave Width duringChemical Mechanical, Vol . 7 , No . 5 , pp .