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새로운 단일 칩 성장공법을 이용한 수직형 발광다이오드 연구 = New generation process of single chip growth for vertical light-emitting diode

이강석 2020년

논문상세정보
인용/피인용
' 새로운 단일 칩 성장공법을 이용한 수직형 발광다이오드 연구 = New generation process of single chip growth for vertical light-emitting diode' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • AlxGa1-xN
  • LED chip process
  • MS-HVPE
  • epitaxy
  • gan
  • mixed-source
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
132 0

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' 새로운 단일 칩 성장공법을 이용한 수직형 발광다이오드 연구 = New generation process of single chip growth for vertical light-emitting diode' 의 참고문헌

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  • 혼 합소스 HVPE 방법에 의한 전력 반도체 소자용 p형 AlN 에피층 성장
    김경화 김상우 김석환 안형수 양민 이강석 이삼녕 전인준 조채용 Journal of the Korean Crystal Growth and Crystal Technology, 29, pp. 83~90 [2019]
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