박사

Phase transformation and optoelectronic applications in van der waals layered materials

Kim, Jungho 2020년
논문상세정보
' Phase transformation and optoelectronic applications in van der waals layered materials' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • optical logic devices
  • optoelectronics
  • phase transition
  • plasmonics
  • transition metal dichalcogenides
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
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' Phase transformation and optoelectronic applications in van der waals layered materials' 의 참고문헌

  • ¡°High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
    520 , 656-660 [2015]
  • Y. H. van der Waals Layered Materials : Opportunities and Challenges
    11 , 11803-11830 [2017]
  • Y. H. Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers
    15 , 410-415 , ( [2015]
  • Y. H. Structural and quantumstate phase transitions in van der Waals layered
    13 , 1232-1232 [2017]
  • Y. H. A systematic study of the synthesis of monolayer tungsten diselenide films on gold foil
    16 , 1216-1222 , ( [2016]
  • Vertical and in-plane heterostructures from WS2/MoS2 monolayers
    13 , 1135-1142 , ( [2014]
  • Two-Step Growth of Two-Dimensional WSe2/MoSe2 Heterostructures
    15 , 6135-6141 , ( [2015]
  • Tunneling Photocurrent Assisted by Interlayer Excitons in Staggered van der Waals Hetero-Bilayers
    29 , 1701512 [2017]
  • Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic Performance
    15 , 7558-7566 [2015]
  • Transversely Divergent Second Harmonic Generation by Surface Plasmon Polaritons on Single Metallic Nanowires .
    17 , 7803-7808 [2017]
  • Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes
    15 , 3030-3034 [2015]
  • Tin sulfide nanoribbons as high performance photoelectrochemical cells , flexible photodetectors and visible-lightdriven photocatalysts
    3 , 2746-2753 [2013]
  • Tin Disulfide-An Emerging Layered Metal Dichalcogenide Semiconductor : Materials Properties and Device Characteristics
    8 , 10743-10755 , ( [2014]
  • The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
    5 , 263-275 , ( [2013]
  • T. Solar-energy conversion and light emission in an atomic monolayer p–n diode .
    9 , 257-261 , ( [2014]
  • T. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
    14 , 4785-4791 [2014]
  • Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition
    12 , 161-166 [2012]
  • Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils
    9 , 5510-5519 [2015]
  • Synthesis , characterization , and electronic structure of single-crystal SnS , Sn2S3 , and SnS2
    25 , 4908-4916 [2013]
  • Spectroscopic Signatures for InterlayerCoupling in MoS2-WSe2 van der Waals Stacking
    8 , 9649-9656 [2014]
  • Selective Amplification of the Primary Exciton in a MoS2 Monolayer
    115 , 226801 [2015]
  • S. I. Plasmonics beyond the diffraction limit .
    4 , 83-91 [2010]
  • Reconfigurable exciton-plasmon interconversion for nanophotonicCircuits .
    7 ( [2016]
  • Recent development of two-dimensional transition metal dichalcogenides and their applications . Mater Today 20 , 116-130 , Estimation of PlasmonCoupling and Propagation
    3 , 943- 947 [2015]
  • Recent development of two-dimensional transition metal dichalcogenides and their applications
  • Recent Advances in Ultrathin Two-Dimensional Nanomaterials
    117 , 6225-6331 [2017]
  • R. All-optical active switching in individual semiconductor nanowires .
    7 , 640-645 ( [2012]
  • Quantum Dot-Based Local Field Imaging Reveals PlasmonBased Interferometric Logic in Silver Nanowire Networks
    11 , 471-475 [2011]
  • Post-patterning of an electronic homojunction in atomically thin monoclinic MoTe2
    4 , 024004 [2017]
  • Photon-triggered nanowire transistors
    12 , 963-968 [2017]
  • Phase-engineered low-resistance contacts for ultrathin MoS2 transistors .
    13 , 1128-1134 ( [2014]
  • Parallel Stitching of 2D Materials
    [2016]
  • Near-unity photoluminescence quantum yield in MoS2
    [2015]
  • N. I. Ultrafast active plasmonics
    3 , 55-58 ( [2009]
  • Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
    10 , 534- 540 [2015]
  • Measurement of the elastic properties and intrinsic strength of monolayer graphene
    321 , 385-388 [2008]
  • M. S. Electronics and Optoelectronics of Two-dimensional Transition Metal Dichalcogenides
    7 , 699-712 , ( [2012]
  • M. Phase engineering of transition metal dichalcogenides
    44 , 2702-2712 , ( [2015]
  • M. Layered SnS versus SnS2 : Valence and Structural implications on Electrochemistry and Clean Energy Electrocatalysis
    120 , 24098-24111 , ( [2016]
  • Logic gates and computation from assembled nanowire building blocks
    294 , 1313-1317 [2001]
  • Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
    13 , 1096-1101 , ( [2014]
  • Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions .
    9 , 1024-1030 , ( [2014]
  • Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films
    688 , 130-139 [2016]
  • L. Nanoscale chiral valley-photon interface through optical spin-orbit coupling
    359 , 443-447 [2018]
  • L. A roadmap for nanophotonics .
    1 , 303-305 [2007]
  • K. S. The Rise of Graphene
    6 , 183- 191 [2007]
  • K. R. Ohmic contacts to SnS films : Selection and estimation of thermal stability
    104 , 124503 , ( [2008]
  • Interface-Engineered Plasmonics in Metal/Semiconductor Heterostructures
    6 , 1600431 ( [2016]
  • H. X. Nanowire-based plasmonic waveguides and devices for integrated nanophotonic circuits .
    1 , 155-169 [2012]
  • H. A. All-optical modulation by plasmonic excitation of CdSe quantum dots
    1 , 402-406 ( [2007]
  • Graphene Barristor , a Triode Device with a GateControlled Schottky Barrier .
    336 , 1140-1143 [2012]
  • Generation of single optical plasmons in metallic nanowires coupled to quantum dots
    450 , 402-406 [2007]
  • Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition .
    480 , 452-456 [2005]
  • Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
    113 076802 ( [2014]
  • Electronic and optical properties of single crystal SnS2 : an earth-abundant disulfide photocatalyst .
    4 , 1312- 1318 , ( [2016]
  • Electron-Beam Induced Transformations of Layered Tin Dichalcogenides
    16 , 4410-4416 [2016]
  • Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes
    14 , 5590-5597 , ( [2014]
  • Electric field effect in atomically thin carbon films
    306 , 666-669 [2004]
  • E. Plasmonics : Merging photonics and electronics at nanoscale dimensions
    311 , 189-193 [2006]
  • Deterministic two-dimensional polymorphism growth of hexagonal n-type SnS2 and orthorhombic p-type SnS crystals
    15 , 3703-3708 , ( [2015]
  • Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
    6 , 8666 [2015]
  • D. R. Large-scale synthesis of ultrathin hexagonal tin disulfide nanosheets with highly reversible lithium storage
    47 , 1270-1272 [2011]
  • D. L. Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays
    4 , 359-363 [2009]
  • Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer
    11 , 3832-3840 [2017]
  • B. Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction
    3 , 692-699 , ( [2016]
  • Atomically thin p–n junctions with van der Waals heterointerfaces
    9 , 676-681 [2014]
  • Array of nanosheets render ultrafast and high-capacity Na-ion storage by tunable pseudocapacitance .
    7 , 12122 ( [2016]
  • All-Optical Logic Gates Based on Nanoscale Plasmonic Slot Waveguides
    12 , 5784-5790 [2012]
  • Absorption dichroism of monolayer 1T '-MoTe2 in visible range
    3 , 031010 , ( [2016]
  • A. Plasmonic circuits for manipulating optical information
    6 , 543-559 [2017]
  • A library of atomically thin metal chalcogenides
    355-359 [2018]
  • A Van Der Waals Homojunction : Ideal p-n Diode Behavior in MoSe2
    27 , 5534-5540 , ( [2015]