연구동향 분석
박사

Design and characterization of solution-processed metal-oxide thin-film transistors for highly stable integrated circuits

Choi, Seungbeom 2020년

논문상세정보
인용/피인용
' Design and characterization of solution-processed metal-oxide thin-film transistors for highly stable integrated circuits' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 2deg
  • ink-jet printing
  • oxide tfts
  • passivation
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
75 0

0.0%

' Design and characterization of solution-processed metal-oxide thin-film transistors for highly stable integrated circuits' 의 참고문헌

  • aqueous route ? for the fabrication of lowtemperature-processable oxide flexible transparent thin-film transistors on plastic substrates .
    5 , e45 . [2013]
  • Y. H. LowTemperature Photochemically Activated Amorphous IndiumGallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors
    8 ( 31 ) , 20192 ? 20199 [2016]
  • Y. H. A Van der Waals Homojunction : Ideal P-N Diode Behavior in MoSe2
    27 , 5534 ? 5540 [2015]
  • V. Fully inkjet-printed transparent oxide thin film transistors using a fugitive wettability switch
    1 , 1500086 . [2015]
  • T.J. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
    10 , 382 ? 388 [2011]
  • T. Recent progress in inkjetprinted thin-film transistors .
    1801445 , doi:10.1002/advs.201801445 [2019]
  • S. Scalability and Stability Enhancement in Self-Aligned TopGate IndiumZinc-Oxide TFTs With Al Reacted Source/Drain .
    6 , 680- 684 [2018]
  • S. K. Polymer Blended Small Molecule Organic Field Effect Transistors with Improved Device-to-Device Uniformity and Operational Stability
    13 ( 7 ) , 1152-1157 . [2012]
  • R. R. Natural and Synthetic Biomedical Polymers ; Kumbar , S. , Laurencin ,C. , Deng , M. Burlington ?
    pp . 1-31 . [2014]
  • R. Pentacene thin-film transistors with polymeric gate dielectric .
    5 ( 1-3 ) , 67-71 [2003]
  • R. Oxide semiconductor thin-film transistors : A review of recent advances
    24 , 2945 ? 2986 [2012]
  • P. J. Molecular origins of fluorocarbon hydrophobicity
    107 ( 31 ) , 13603-13607 . [2010]
  • P. A sustainable approach to flexible electronics with zinc ? tin oxide thin ? film transistors
    4 , 1800032 [2018]
  • L. E. Graphene as An Electrode for SolutionProcessed Electron-Transporting Organic Transistors .
  • J. M. Improved Synthesis of Graphene Oxide
    4 , 4806 ? 4814 [2010]
  • J. F. Passivation of Zinc ? tin ? oxide Thin-Film Transistors
    23 ( 6 ) , L25 . [2005]
  • J. C. Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces
    8 , 404 [2018]
  • Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 ¡ÆC
    112 , 162104 [2018]
  • H. Stability and HighFrequency Operation of Amorphous In-Ga-Zn-O Thin-Film Transistors with Various Passivation Layers
    520 ( 10 ) , 3778 ? 3782 [2012]
  • H. Critical Dipole Length for the Wetting Transition Due to Collective Water-Dipoles Interactions
    2 , 358 . [2012]
  • D. Work Function Tuning of Reduced Graphene Oxide Thin Films
    120 , 281 ? 290 . [2016]
  • D. K. A Transparent Diode with High Rectifying Ratio Using Amorphous Indium-GalliumZinc Oxide/SiNx Coupled Junction
    107 , 053501 [2015]
  • Capillary flow as the cause of ring stains from dried liquid drops .
    389 , 827 ? 829 [1997]
  • Calculating the trap density of states in organic field-effect transistors from experiment : A comparison of different methods
    81 , 035327 [2010]
  • An Improved Hummers Method for ECoFriendly Synthesis of Graphene Oxide
    64 , 225 ? 229 [2013]
  • <9> Kwon, S.-H.; Park, J.; Kim, W. K.; Yang, Y.; Lee, E.; Han, C. J.; Park, S. Y.; Lee, J.; Kim, Y. S. The Effective Energy Harvesting Method from Natural Water Motion Active Transducer. Energy Environ. Sci. 2014, 7 (10), 3279?3283.
  • <8> Seo, S.-J.; Yang, S.; Ko, J.-H.; Bae, B.-S. Effects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film Transistors. Electrochem. Solid-State Lett. 2011, 14 (9), H375-H379.
  • <7> Park, J. S.; Jeong, J. K.; Chung, H. J.; Mo, Y. G.; Kim, H. D. Electronic Transport Properties of Amorphous IndiumGallium-Zinc Oxide Semiconductor upon Exposure to Water. Appl. Phys. Lett. 2008, 92 (7), 93?96.
  • <64> Kim, W. K.; Kim, E. S.; Park,K.S; Kim, B. S. Influence of effective channel length in self-aligned coplanar amorphousindium-gallium-zinc-oxide thin-film transistors with different annealing temperatures. Appl. Phys. Lett. 2018, 113, 022104
  • <63> Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance. ACS Appl. Mater. Interfaces. 2013, 5, 15, 6990- 6995
  • <5> Conley, J. F. Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors. IEEE Trans. Device Mater. Reliab. 2010, 10 (4), 460?475.
  • <59> Liu, Y.; Zhou, H. L.; Cheng, R.; Yu, W. J.; Huang, Y.; Duan, X. F. Highly Flexible Electronics from Scalable Vertical Thin Film Transistors. Nano Lett. 2014, 14, 1413?1418.
  • <58> Heo, J.; Byun, K. E.; Lee, J.; Chung, H. J.; Jeon, S.; Park, S.; Hwang, S. Graphene and Thin-Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low-Power Electronics. Nano Lett. 2013, 13, 5967?5971.
  • <57> Wagner, L. F.; Young, R. W.; Sugerman, A. A Note on the Correlation between the Schottky-Diode Barrier Height and the Ideality Factor as Determined from IV Measurements. IEEE Electron Device Lett. 1983, 4, 320?322.
  • <52> Kim, J.; Choi, S.; Kim, M.; Ha, T.J.; Kim, Y.-H. Strontium doping effects on the characteristics of solutionprocessed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thinfilm transistors. Ceram. Int. 2017, 43, 13576?13580.
  • <51> Kim, J.; Choi, S.; Jo, J.W.; Park, S.K.; Kim, Y.H. Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors. Thin Solid Films 2018, 660, 814?818.
  • <50> Yang, W.; Song, K.; Jung, Y.; Jeong, S.; Moon, J. Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors. J. Mater. Chem. C 2013, 1, 4275?4282.
  • <4> Liu, P. T.; Chou, Y. T.; Teng, L. F. EnvironmentDependent Metastability of Passivation-Free Indium Zinc Oxide Thin Film Transistor after Gate Bias Stress. Appl. Phys. Lett. 2009, 95 (23), 2007?2010.
  • <47> Li, Y.; Lan, L.; Sun, S.; Lin, Z.; Gao, P.; Song, W.; Song, E.; Zhang P.; Peng, J. All inkjet-printed metal-oxide thin-film transistor array with good stability and uniformity using surface-energy patterns. ACS Appl. Mater. Interfaces 2017, 9, 8194?8200.
  • <46> Li, Y.; Lan, L.; Gao, P.; He, P.; Dai, X.; Cao, H.; Liang, L.; Peng, J. Inkjet-printed Self-aligned short-channel metaloxide thin-film transistors based on coffee stripe dewetting method. IEEE Electron. Device Lett. 2019, 40, 228?231.
  • <45> Zhang, Q.; Shao, S.; Chen, Z.; Pecunia, V.; Xia, K.; Zhao, J.; Cui, Z. High-resolution inkjet-printed oxide thin-film transistors with a self-aligned fine channel bank structure. ACS Appl. Mater. Interfaces 2018, 10, 15847?15854.
  • <43> Sung, S.; Park, S.; Cha, S.; Lee, W.J.; Kim, C.H.; Yoon, M.H. Direct patterning of sol-gel metal oxide semiconductor and dielectric films via selective surface wetting. RSC Adv. 2015, 5, 38125?38129.
  • <42> Lee, W.J.; Park, W.T.; Park, S.; Sung, S.; Noh, Y.Y.; Yoon, M.H. Large-scale precise printing of ultrathin sol-gel oxide dielectrics for directly patterned solution-processed metal oxide transistor arrays. Adv. Mater. 2015, 27, 5043?5048.
  • <41> Park, S.K.; Kim, Y.-H.; Han, J.-I. All solutionprocessed high-resolution bottom-contact transparent metal-oxide thin film transistors. J. Phys. D. Appl. Phys. 2009, 42, 125102.
  • <40> Kim, Y.-H.; Heo, J.-S.; Kim, T.-H.; Park, S.; Yoon, M.- H.; Kim, J.; Oh, M.S.; Yi, G.-R.; Noh, Y.-Y.; Park, S.K. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films. Nature 2012, 489, 128?132.
  • <3> Knobelspies, S.; Daus, A.; Cantarella, G.; Petti, L.; Munzenrieder, N.; Troster, G.; Salvatore, G. Flexible a-IGZO Phototransistor for Instantaneous and Cumulative UVExposure Monitoring for Skin Health. Adv. Electron. Mater. 2016, 2 (10), 1600273.
  • <39> Jun, T.; Song, K.; Jeong, Y.; Woo, K.; Kim, D.; Bae, C.; Moon, J. High-performance low-temperature solutionprocessable ZnO thin film transistors by microwave-assisted annealing. J. Mater. Chem. 2011, 21, 1102?1108.
  • <34> Banger, K.K.; Yamashita, Y.; Mori, K.; Peterson, R.L.; Leedham, T.; Rickard, J.; Sirringhaus, H. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ¡°sol?gel on chip¡± process. Nat. Mater. 2011, 10, 45?50.
  • <33> Oh, M.S.; Lee, K.; Lee, K.H.; Cha, S.H.; Choi, J.M.; Lee, B.H.; Sung. M. M.; Im, S. Transparent photo-stable complementary inverter with an organic/inorganic nanohybrid dielectric layer. Adv. Funct. Mater. 2009, 19, 726?732.
  • <32> Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432, 488?492.
  • <30>https://www.chemours.com/Teflon_Industrial/en_US/asse ts/downloads/teflon-af-product-information.pdf (accessed Apr 17, 2017).
  • <2> Kim, J.; Kim, J.; Jo, S.; Kang, J.; Jo, J.; Lee, M.; Moon, J.; Yang, L.; Kim, M.; Kim, Y. et al. Ultrahigh Detective Heterogeneous Photosensor Arrays with In-Pixel Signal Boosting Capability For Large-Area and Skin-Compatible Electronics. Adv. Mater. 2016, 28 (16), 3078-3086.
  • <28> Lee, W. J.; Chang, J. G.; Ju, S. P. Hydrogen-Bond Structure at the Interfaces between Water/poly(methyl methacrylate), Water/poly(methacrylic acid), and water/poly(2- aminoethylmethacrylamide). Langmuir 2010, 26 (15), 12640?12647.
  • <25> Kozbial, A.; Li, Z.; Conaway, C.; McGinley, R.; Dhingra, S.; Vahdat, V.; Zhou, F.;. D'Urso, B.; Liu, H.; Li, L. Study on the Surface Energy of Graphene by Contact. Angle Measurements. Langmuir 2014, 30 (28), 8598?8606.
  • <24> Jeong, J. K.; Won Yang, H.; Jeong, J. H.; Mo, Y. G.; Kim, H. D. Origin of Threshold Voltage Instability in IndiumGallium-Zinc Oxide Thin Film Transistors. Appl. Phys. Lett. 2008, 93 (12), 1?4.
  • <23> Choi, S. H., Jang, J. H., Kim, J. J., & Han, M. K. Lowtemperature organic (CYTOP) passivation for improvement of electric characteristics and reliability in IGZO TFTs. IEEE Electron Device Lett, 2012, 33(3), 381-383.
  • <22> Zhou, X., Shao, Y., Zhang, L., Xiao, X., Han, D., Wang, Y., & Zhang, S. Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors. IEEE Electron Device Lett. 2017, 38 (4), 465-468.
  • <21> Li, J.; Zhou, F.; Lin, H. P.; Zhu, W. Q.; Zhang, J. H.; Jiang, X. Y.; Zhang, Z. L. Effect of Reactive Sputtered SiOx Passivation Layer on the Stability of InGaZnO Thin Film Transistors. Vacuum. 2012, 86 (12), 1840?1843.
  • <20> Yang, S.; Cho, D. H.; Ryu, M. K.; Park, S. H. K.; Hwang, C. S.; Jang, J.; Jeong, J. K. High-Performance AlSnZnInO Thin-Film Transistors: Impact of Passivation Layer on Device Stability. IEEE Electron Device Lett. 2010, 31 (2), 144?146.
  • <1> Discrete, J. S.; Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T. Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors. Nature 2004, 432, 3383?3386.
  • <18> Kim, Y. H.; Kim, H. S.; Han, J. I.; Park, S. K. SolventMediated Threshold Voltage Shift in Solution-Processed Transparent Oxide Thin-Film Transistors. Appl. Phys. Lett. 2010, 97 (9), 092105.
  • <16> Marinkovic, M.;Takata, R.; Neumann, A.; Pham, D. V.; Anselmann, R. Maas, J.; van der Steen, J.-L.; Gelinck, G.; Katsouras, I. Large-Area Processing of Solution Type MetalOxide in TFT Backplanes and Integration in Highly Stable OLED Displays. Proceedings of SID (Society for Information Display). 2017, 48 (1), 169?172.
  • <15> Kim, M. S.; Park, S. K.; Kim, Y. H.; Kang, J. W.; Han, J. I. Glycerol-doped Poly (3, 4-ethylenedioxy-thiophene): Poly (styrene sulfonate) Buffer Layer for Improved Power Conversion in Organic Photovoltaic Devices. J. Electrochem. Soc. 2009, 156 (10), H782-H785.
  • <13> Fan, C. L.; Shang, M. C.; Li, B. J.; Lin, Y. Z.; Wang, S. J.; Lee, W. Der; Hung, B. R. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process. Materials (Basel). 2015, 8 (4), 1704?1713.
  • <12> Chen, W. T.; Lo, S. Y.; Kao, S. C.; Zan, H. W.; Tsai, C. C.; Lin, J. H.; Fang, C. H.; Lee, C. C. Oxygen-Dependent Instability and Annealing/passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors. IEEE Electron Device Lett. 2011, 32 (11), 1552?1554.
  • <10> Lin, Z. H.; Cheng, G.; Lee, S.; Pradel, K. C.; Wang, Z. L. Harvesting Water Drop Energy by a Sequential ContactElectrification and Electrostatic-Induction Process. Adv. Mater. 2014, 26 (27), 4690?4696.