'
Transfer-free large-scale high-quality monolayer graphene synthesized at low temperatures below 150 ℃' 의 주제별 논문영향력
논문영향력 요약
주제
기술과 연합작용
동일주제 총논문수
논문피인용 총횟수
주제별 논문영향력의 평균
728
0
0.0%
주제별 논문영향력
논문영향력
주제
주제별 논문수
주제별 피인용횟수
주제별 논문영향력
주제분류(KDC/DDC)
기술과 연합작용
728
0
0.0%
계
728
0
0.0%
* 다른 주제어 보유 논문에서 피인용된 횟수
0
'
Transfer-free large-scale high-quality monolayer graphene synthesized at low temperatures below 150 ℃' 의 참고문헌
Z. Yin, S. Wu, X. Zhou, X. Huang, Q. Zhang, F. Boey, H. Zhang, Electrochemical deposition of ZnO nanorods on transparent reduced graphene oxide electrodes for hybrid solar cells, Small, 2010, 6, 307-312.
Z. H. Ni, T. Yu, Y. H. Lu, Y. Y. Wang, Y. P. Feng, Z. X. Shen, Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening, ACS Nano, 2, 2008, 2301-2305.
Z. Chen, Y.M. Lin,M. J. Rooks, and P. Avouris, Graphene nanoribbon electronics, Physica E, 2007, 40, 228.
Y. Zhu, S. Murali, W. Cai, X. Li, J. W. Suk, J. R. Potts, R. S. Ruoff, Graphene and graphene oxide: Synthesis, properties, and applications, Advanced Materials, 22, 2010, 3906-3924.
Y. Zhang, Y.-W. Tan, H. L. Stormer, P. Kim, Experimental observation of the quantum Hall effect and Berry’s phase in graphene, Nature, 438, 2005, 201-204.
Y. Ye, Y. Dai, L. Dai, Z. Shi, N. Liu, F. Wang, L. Fu, R. Peng, X. Wen, Z. Chen, Z. Liu, G. Qin, High-performance single CdS nanowire (nanobelt) schottky junctionsolar cells with Au/graphene Schottky electrodes, ACS Appl. Mater. Inter., 2, 2010, 3406-3410.
Y. Ye, L. Gan, L. Dai, Y. Dai, X. Guo, H. Meng, B. Yu, Z. Shi, K. Shang, G. Qin, A simple and scalable graphene patterning method and its application in CdSe nanobelt/graphene Schottky junction solar cells, Nanoscale, 3, 2011, 1477-1481.
Y. Wang, S. W. Tong, X. F. Xu, B. Ӧzyilmaz, K. P. Loh, Interface engineering of layer-by-layer stacked graphene anodes for high-performance organic solar cells, Adv. Mater., 23, 2011, 1514-1518.
Y. W. Son, M. L. Cohen, S. G. Louie, Energy Gaps in Graphene Nanoribbons, PRL, 2006, 97, 216803.
Y. Ouyang, X. Wang, H. Dai, J. Guo, Carrier scattering in graphene nanoribbon field-effect transistors, Appl. Phys. Lett., 2008, 92, 243124.
Y. Obeng, P. Srinivasan. Graphene: Is it the future for semiconductors? An overview of the material, devices, and applications, Interface-Electrochemical Society, 20, 2011, 47.
Y. -M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, Ph. Avouris, 100-GHz transistors from wafer-scale epitaxial graphene, Science, 327, 2010, 662.
X. Wang, L. Zhi, K. Mullen, Transparent, conductive graphene electrodes for dye-sensitized solar cells, Nanoletters, 2008, 8, 323.
X. Q. Zeng, Y. L. Wang, Z. L. Xiao, M. L. Latimer, T. Xu, W. K. Kwok, Hydrogen responses of ultrathin Pd films and nanowire networks with a Ti buffer layer, J. Mater. Sci., 47, 2012, 6647-6651.
X. Ma, H. Zhang, Fabrication of graphene films with high transparent conducting characteristics, Nanoscale Res. Lett., 8, 2013, 440-446.
X. Li, X.Wang, L. Zhang, S. Lee, H. Dai, Chemically derived, ultrasmooth graphene nanoribbon semiconductors, Science, 2008, 319, 1229.
X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, R.S. Ruoff, Large-Area Synthesis of High- Quality and Uniform Graphene Films on Copper Foils, Science. 324 (2009) 1312– 1314.
X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R. S. Ruoff, Large-area synthesis of high-quality and uniform graphene films on copper foils, Science, 2009, 324, 1312-1314.
X. Li, C. W. Magnuson, A. Venugopal, R. M. Tromp, J. B. Hannon, E. M. Vogel, L. Colombo, R. S. Ruoff, Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper, J. Am. Chem. Soc., 133, 2011, 2816-2819.
X. Li, C. W. Magnuson, A. Venugopal, J. An, J. W. Suk, B. Han, M. Borysiak, W. Cai, A. Velamakanni, Y. Zhu, L. Fu, E. M. Vogel, E. Voelkl, L. Colombo, R. S. Ruoff, Graphene films with large domain size by a two-step chemical vapor deposition process, Nano Letters, 10, 2010, 4328-4334.
X. Huang, Z. Yin, S. Wu, X. Qi, Q. He, Q. Zhang, Q. Yan, F. Boey, H. Zhang, Graphene-based materials: synthesis, characterization, properties, and applications, Small, 7, 2011, 1876-1902.
X. F. Wang, M. Zhao, D. D. Nolte, Optical Contrast and Clarity of Graphene on an Arbitrary Substrate, Appl. Phys. Lett., 95, 2009, 081102.
X. Du, I. Skachko, A. Barker, E. Y. Andrei, Approaching ballistic transport in suspended graphene, Nat. Nanotechnol., 3, 2008, 491-495.
W.-J. Kim, Y. M. Chang, J. Lee, D. Kang, J. H. Lee, Y.-W. Song, Ultrafast optical nonlinearity of multi-layered graphene synthesized by the interface growth process, Nanotechnology, 23, 2012, 225706.
W. Zhu, T. Low, V. Perebeinos, A. A. Bol, Y. Zhu, H. Yan, J. Tersoff, P. Avouris, Structure and electronic transport in graphene wrinkles, Nano Lett., 12, 2012, 3431-3436.
W. Zhu, T. Low, V. Perebeinos, A. A. Bol, Y. Zhu, H. Yan, J. Tersoff, P. Avouris, Structure and Electronic Transport in Graphene Wrinkles, Nano Lett., 2012, 12, 3431-3436
W. Zhang, D. R. Sadedin, M. A. Reuter, J. C. McCallum, The De-oxidation of Partially Oxidized Titanium by Hydrogen Plasma, Mater. Forum., 31, 2007, 76-83.
W. S. Hummers Jr., R. E. Offeman, J. Am. Chem. Soc., 80, 1958, 1339.
W. J. Borland, S. Ferguson, Embedded Passive Components in Printed Wiring Boards: A Technology Review, CircuiTree Magazine, March, 2011, 94-106.
W. Han, A. Zettl, An Efficient Route to Graphitic Carbon-Layer-Coated Gallium Nitride Nanorods, Adv. Mater., 2002, 14, 1560-1562.
V. Singh, D. Joung, L. Zhai, S. Das, S. I. Khondaker, S. Seal, Graphene based materials: Past, present and future. Progress in Materials Science, 2011, 56, 1178-1271.
V. Ryzhii, M. Ryzhii, T. Otsuji, Thermionic and tunneling transport mechanisms in graphene field-effect transistors, Phys. Stat. Sol. A, 2008, 205, 1527.
V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, N. Kirova, Device model for graphene bilayer field-effect transistor, J. Appl. Phys., 2009, 105, 104510.
V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, Current-voltage characteristics of a graphene-nanoribbon field-effect transistor, J. Appl. Phys., 2008, 103, 094510.
V. M. Pereira, A. H. Castro, N. M. R. Peres, Tight-binding approach to uniaxial strain in graphene, Phys. Rev. B, 80, 2009, 045401.
V. E. Caladoa, G. F. Schneider, A. M. M. G. Theulings, C. Dekker, L. M. K. Vandersypen, Formation and control of wrinkles in graphene by the wedging transfer method, Appl. Phys. Lett., 101, 2012, 103116.
T. R. Nayak, H. Andersen, V. S. Makam, C. Khaw, S. Bae, X. Xu, P.-L. R. Ee, J.-H. Ahn, B. H. Hong, G. Pastorin, B. zyilmaz, Graphene for controlled and accelerated osteogenic differentiation of human mesenchymal stem cells, ACS Nano, 5, 2011, 4670-4678.
T. Oznuluer, E. Pince, E. O. Polat, O. Balci, O. Salihoglu, C. Kocabas, Synthesis of graphene on gold, Appl. Phys. Lett., 98, 2011, 183101.
T. Ohta, A. Bostwick, T. Seyller, K. Horn, E. Rotenberg, Controlling the electronic structure of bilayer graphene, Science, 2006, 313, 951.
T. M. Paronyan, E. M. Pigos, G. Chen, A. R. Harutyunyan, Formation of ripples in graphene as a result of interfacial instabilities, ACS Nano, 5, 2011, 9619-9627.
T. Kuila, S. Bose, P. Khanra, A. K. Mishra, N. H. Kim, J. H. Lee, Recent advances in graphene-based biosensors, Biosens. Bioelectron., 26, 2011, 4637-4648.
S.-Y. Kwon, C. V. Ciobanu, V. Petrova, V. B. Shenoy, J. Bare o, V. Gambin, I. Petrov, S. Kodambaka, Growth of Semiconducting Graphene on Palladium. Nano Letters, 9, 2009, 3985-3990.
S. Y. Zhou, G.-H. Gweon, A. V. Fedorov, P. N. First, W. A. de Heer, D.-H. Lee, F. Guinea, A. H. C. Neto, A. Lanzara, Substrate-induced band gap opening in epitaxial graphene, Nat. Mater., 6, 2007, 770-775.
S. Wang, P. K. Ang, Z. Wang, A. L. L. Tang, J. T. L. Thong, K. P. Loh, High mobility, printable, and solution-processed graphene electronics, Nano Lett., 10 (2010) 92-98.
S. Stankovich, D. A. Dikin, R. D. Piner, K. A. Kohlhaas, A. Kleinhammes, Y. Jia, Y. Wu, S. T. Nguyen, R. S. Ruoff, Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide, Carbon, 45, 2007, 1558-1565.
S. Stankovich, D. A. Dikin, G. H. B. Dommett, K. M. Kohlhaas, E. J. Zimney, E. A. Stach, R. D. Piner, S. T. Nguyen, R. S. Ruoff, Graphene-based composite materials, Nature, 442, 2006, 282-286.
S. Stankovich, D. A. Dikin, G. H. B. Dommett, K. M. Kohlhaas, E. J. Zimney, E. A. Stach, R. D. Piner, S. T. Nguyen, R. S. Ruoff, Graphene-based composite materials, Nature, 2006, 442, 282-286.
S. S. Li, K.-H. Tu, C.-C. Lin, C.-W. Chen, M. Chhowalla, Solution processable graphene oxide as an efficient hole transport layer in polymer solar cells, ACS Nano, 2016, 4, 3169-3174.
S. S. Das, A. K. Geim, P. Kim, A. H. MacDonald, Exploring graphene - Recent research advances – Foreword, Solid State Comm., 2007, 143, 1-2.
S. K. Hong, S. M. Song, O. Sul, B. J. Cho, Carboxylic group as the origin of electrical performance degradation during the transfer process of CVD growth graphene, J. Electrochem. Soc., 159, 2012, K107-109.
S. J. Chae, F. G neş, K. K. Kim, E. S. Kim, G. H. Han, S. M. Kim, H.-J. Shin, S.-M. Yoon, J.-Y. Choi, M. H. Park, C. W. Yang, D. Pribat, Y. H. Lee, Synthesis of large-area graphene layers on poly-nickel substrate by chemical vapor deposition: wrinkle formation, Adv. Mater., 21, 2009, 2328-2333.
S. H. Lee, J. H. Kim, B. J. Park, J. Park, H. S. Kim, S. G. Yoon, Wrinkle-Free Graphene Electrodes in Zinc Tin Oxide Thin-Film Transistors for Large Area Applications, Nanotechnology, 28, 2017, 075205.
S. H. Chan, S. H. Chen, W. T. Lin, M. C. Li, Y. C. Lin, C. C. Kuo, Low-Temperature Synthesis of Graphene on Cu using Plasma-Assisted Thermal Chemical Vapor Deposition, Nanoscale Res. Lett., 8, 2013, 285-290.
S. Doniach, M. Šunjić, Many-electron singularity in X-ray Photoemission and X-ray line spectra from metals, J. Phys. C: Solid St. Phys., 3, 1970, 285-291.
S. D. Sarma, S. Adam, E.H. Hwang, E. Rossi, Electronic transport in two-dimensional graphene, Reviews of Modern Physics, 83, 2011, 407.
S. C. Xu, B. Y. Man, S. Z. Jiang, C. S. Chen, C. Yang, M. Liu, X. G. Gao, Z. C. Sun, C. Zhang, Direct Synthesis of Graphene on SiO2 Substrates by Chemical Vapor Deposition, CrystEngComm, 15, 2013, 1840-1844.
S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. I. Song, Y.-J. Kim, K. S. Kim, B. zyilmaz, J.-H. Ahn, B. H. Hong, S. Iijima, Roll-to-roll production of 30-inch graphene films for transparent electrodes, Nat. Nanotechnol. 5 (2010) 574-578.
R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres, A. K. Geim, Fine structure constant defines visual transparency of grapheme, Science, 2008, 320, 1308.
R. Lewandowska, J. Liu, Raman Microscopy: Analysis of Nanomaterials, Reference Module in Materials Science and Materials Engineering, 2016
R. Balog, B. J rgensen, L. Nilsson, M. Andersen, E. Rienks, M. Bianchi, M. Fanetti, E. L gsgaard, A. Baraldi, S. Lizzit, Z. Sljivancanin, F. Besenbacher, B. Hammer, T. G. Pedersen, P. Hofmann, L. Hornek r, Bandgap opening in graphene induced by patterned hydrogen adsorption, Nat. Mater., 9, 2010, 315-319.
R. A. Palmer, T. M. Doan, P. G. Lloyd, B. L. Jarvis, N. U. Ahmed, Reduction of TiO2 with Hydrogen Plasma, Plasma Chemisty and. Plasma Processing, 22, 2002, 335−350.
Q. Zhang, T. Fang, H. Xing, A. Seabaugh, D. Jena, Graphene Nanoribbon Tunnel Transistors, IEEE Electron Device Lett., 2008, 0741, 3106.
Q. Bao, H. Zhang, Y. Wang, Z. Ni, Y. Yan, Z. X. Shen, K. P. Loh, D. Y. Tang, Atomic layer graphene as a saturable absorber for ultrafast pulsed lasers, Adv. Funct. Mater., 19, 2009, 3077-3083
P. Zhao, J. Chauhan, J. Guo, Computational study of tunneling transistor based on graphene nanoribbon, Nano Letters, 2009, 9, 684.
P. W. Sutter, J.-I. Flege, E. A. Sutter, Epitaxial graphene on ruthenium, Nature Materials, 7, 2008, 406-411.
P. R. Wallace, The band theory of graphite, Physical Review, 71, 1947, 622-634.
Na, S. H., Song, H. A. & Yoon, S. G. Realization of transparent and flexible capacitors using reliable graphene electrodes, RSC Adv., 2012, 2, 5214-5220.
N.-J. Seong, J.-H. Park, S.-G. Yoon, Effect of excess bismuth concentration ondielectric and electrical properties of fully crystallized Bi2Mg2/3Nb4/3O7 thin films, Appl. Phys. Lett., 91, 2007, 072904.
N. D. Cuong, J. K. Ahn, K. W. Park, N. J. Seong, S. G. Yoon, An Extremely High Dielectric Constant in Bismuth-Based Pyrochlore Multilayer Film Capacitors Combined with Percolative Structure, Appl. Phys. Lett., 2008, 93, 212901.
M. Y. Lin, C. F. Su, S. C. Lee, S. Y. Lin, The growth mechanisms of graphene directly on sapphire substrates by using the chemical vapor deposition, J. Appl. Phys., 115, 2014, 223510.
M. Y. Han, B. Ozyilmaz, Y. B. Zhang, P. Kim, Energy Band-Gap Engineering of Graphene Nanoribbons, Phys. Rev. Lett., 2007, 98, 206805.
M. Wilson, Electrons in atomically thin carbon sheets behave like massless particles, Physics Today, 59, 2006, 21.
M. S. Jang, H. Kim, Y. W. Son, H. A. Atwater, W. A. Goddard III, Graphene field effect transistor without an energy gap, PNAS, 110, 2013, 8786-8789.
M. M. Khader, F. M. N. Kheiri, B. E. El-Anadouli, B. G. Ateya, Mechanism of Reduction of Rutile with Hydrogen, J. Phys. Chem., 97, 1993, 6074-6077.
M. Luisiera, G. Klimeck, Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness, Appl. Phys. Lett., 2009, 94, 223505.
M. Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, Graphene CVD Growth on Copper and Nickel: Role of Hydrogen in Kinetics and Structure, Phys. Chem. Chem. Phys., 13, 2011, 20836-20843.
M. J. Allen, V. C. Tung, R. B. Kaner, Honeycomb carbon: A review of graphene, Chemical Reviews, 110, 2009, 132-145.
M. I. Katsnelson. Graphene: Carbon in two dimensions. Materials Today, 2007, 10, 20-27.
M. H. Rümmeli, A. Bachmatiuk, A. Scott, F. Börrnert, J. H. Warner, V. Hoffman, J. H. Lin, G. Cuniberti, B. Büchner, Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator, ACS Nano, 4, 2010, 4206-4210.
M. Choe, B. H. Lee, G. Jo, J. Park, W. Park, S. Lee, W.-K. Hong, M.-J. Seong, Y. H. Kahng, K. Lee, T. Lee, Efficient bulk-heterojunction photovoltaic cells with transparent multi-layer graphene electrodes, Org. Electron., 2010, 11, 1864-1869.
M. Borghei, R. Karimzadeh, A. Rashidi, N. Izadi, Kinetics of methane decomposition to COx-free hydrogen and carbon nanofiber over Ni-Cu/MgO catalyst, International Journal of Hydrogen Energy, 35, 2010, 9479-9488.
L. G. D. Arco, Y. Zhang, C. W. Schlenker, K. Ryu, M. E. Thompson, C. Zhou, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics, ACS Nano, 4, 2010, 2865-2873.
L. G. D. Arco, Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics, ACS Nano, 2010, 4, 2865-2873.
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric Field Effect in Atomically Thin Carbon Films, Science, 306 (2004) 666-669.
K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. R hrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, T. Seyller, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nature Materials, 8, 2009, 203-207.
K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B. H. Hong, Large-scale pattern growth of graphene films for stretchable transparent electrodes, Nature, 457, 2009, 706-710.
K. S. A. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, A. Firsov, Two-dimensional gas of massless Dirac fermions in graphene, Nature, 2005, 438, 197-200.
K. Nakada, M. Fujita, G. Dresslhaus, M. S. Dresselhaus, Edge state in graphene ribbons: Nanometer size effect and edge shape dependence, Phys. Rev. B, 1996, 54, 17954.
K. Murakami, S. Tanaka, A. Hirukawa, T. Hiyama, T. Kuwajima, E. Kano, M. Takeguchi, J. Fujita, Direct Synthesis of Large Area Graphene on Insulating Substrate by Gallium Vapor-Assisted Chemical Vapor Deposition, Appl. Phys. Lett., 2015, 106, 093112.
K. Kim, J.-Y. Choi, T. Kim, S.-H Cho, H.-J, Chung, A role for graphene in silicon based semiconductor devices, Nature, 479, 2011, 338-344.
K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer, Ultrahigh electron mobility in suspended graphene, Solid State Communications, 2008, 146, 351-355.
K. Asai, Y. Nagayasu, K. Takane, S. Iwamoto, E. Yagasaki, K. Ishii, M. Inoue, Mechanism of methane decomposition over Ni catalyst at high temperature, J. Jap. Petro. Inst., 51, 2008, 42-49.
K. A. Mkhoyan, A. W. Contryman, J. Silcox, D. A. Stewart, G. Eda, C. Mattevi, S. Miller, M. Chhowalla, Atomic and electronic structure of graphene-oxide, Nano Lett., 9, 2009, 1058-1063.
J.P. Perdew, K. Burke, M. Ernzerhof, Generalized Gradient Approximation Made Simple, Phys. Rev. Lett., 77 (1996) 3865-3868.
J.-P. Shim, M. Choe, S.-R. Jeon, D. Seo, T. Lee, D.-S. Lee, InGaN based p–i–n solar cells with graphene electrodes, Appl. Phys. Express, 2011, 4, 052302.
J.-O. Carlsson, P. M. Martin, Handbook of Deposition Technologies for Films and Coatings - Chapter 7, 3rd edition, Science, Applications and Technology, 2009.
J.-H. Son, S.-J. Baeck, M.-H. Park, J.-B. Lee, C.-W. Yang, J.-K. Song, W.-C. Zin, J.-H. Ahn, Detection of graphene domains and defects using liquid crystals, Nat. Commun., 5, 2014, 3484-3470.
J.-H. Park, C.-J. Xian, N.-J. Seong, S.-G. Yoon, Realization of a high capacitance density in Bi2Mg2/3Nb4/3O7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications, Appl. Phys. Lett., 89, 2006, 232910.
J. Wu, M. Agrawal, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, P. Peumans, Organic light-emitting diodes on solution-processed graphene transparent electrodes, ACS Nano, 4, 2100, 43-48.
J. Wu, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, P. Peumans, Organic solar cells with solution-processed graphene transarent electrodes, Appl. Phys. Lett., 2008, 92, 263302.
J. Wei, T. Vo, F. Inam, Epoxy/graphene nanocomposites–processing and properties: A review, RSC Advances, 2015, 5, 73510-73524.
J. Sun, Y. Chen, X. Cai, B. Ma, Z. Chen, M. K. Priydarshi, K. Chen, T. Gao, X. Song, Q. Ji, X. Guo, D. Zou, Y. Zhang, and Z. Liu, Direct low-temperature synthesis of graphene on various glasses by plasma-enhanced chemical vapor deposition for versatile, cost-effective electrodes, Nano Research, 8, 2015, 3496-3504.
J. Park, J. Lee, J. H. Choi, D. K. Hwang, Y. W. Song, Growth Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 Catalysts, Sci. Rep., 5, 0015, 11839.
J. Lundstedt, S. He, A Time-Domain Optimization Technique for the Simultaneous Reconstruction of the Characteristic Impedance, Resistance and Conductance of a Transmission Line, J. Electromagn. Waves Appl., 10, 1996, 581-601.
J. Kwak, J. H. Chu, J.-K. Choi, S.-D. Park, H. Go, S. Y. Kim, K. Park, S.-D. Kim, Y.-W. Kim, E. Yoon, S. Kodambaka, S.-Y. Kwon, Near Room-Temperature Synthesis of Transfer-Free Graphene Films, Nat. Commun., 3, 2012, 645.
J. Jiang, S.-G. Hur, S.-G. Yoon, Epitaxial PMN-PT thin films grown on LaNiO3/CeO2/YSZ buffered Si (001) substrates by pulsed laser deposition, J. Electrochem. Soc., 2011, 158, G83-G87.
J. Jiang, H.-H. Hwang, W.-J. Lee, S.-G. Yoon, Microstructural and electrical properties of 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) epitaxial films grown on Si substrates, Sensor and Actuat B:Chemical, 155, 2011, 854-85.
J. Jang, M. Son, S. Chung, K. Kim, C. Cho, B. H. Lee, M. H. Ham, Low-Temperature-Grown Continuous Graphene Films from Benzene by Chemical Vapor Deposition at Ambient Pressure. Sci. Rep., 5, 2016, 17955.
J. Hajto, J. Hu, A. J. Snell, K. Turvey, M. Rose, DC and ac Measurements on Metal/a-Si:H/Metal Room Temperature Quantized Resistance Devices, J. Non-Cryst. Solids, 2000, 266-269, 1058-1061.
J. Fujita, T. Ichihashi, S. Nakazawa, S. Okada, M. Ishida, Y. Ochiai, Inducing graphite tube transformation with liquid gallium and flash discharge, Appl. Phys. Lett., 88, 2006, 083109.
J. Fujita, T. Hiyama, A. Hirukawa, T. Kondo, J. Nakamura, S. Ito, R. Araki, Y. Ito, M. Takeguchi, W. W. Pai, Near Room Temperature Chemical Vapor Deposition of Graphene with Diluted Methane and Molten Gallium Catalyst, Sci. Rep., 7, 2017, 12371.
J. Finder, Scanning tunneling microscopy and atomic force microscopy in organic chemistry, Angew. Chem. Int. Edit., 31, 1992, 1298-1328.
J. C. Meyer, Graphene, 5 - Transmission electron microscopy (TEM) of graphene, Woodhead Publishing, 2014,
J. Bai, X. Duan, Y. Huang, Rational fabrication of graphene nanoribbons using a nanowire etch mask, Nanoletters, 2009, 9, 2083.
J. An, E. Voelkl, J. W. Suk, X. Li, C. W. Magnuson, L. Fu, P. Tiemeijer, M. Bischoff, B. Freitag, E. Popova, R. S. Ruoff, Domain (grain) boundaries and evidence of ‘‘Twinlike’’ structure in chemically vapor deposited grown graphene, ACS Nano, 5, 2011, 2433.
J. A. Rogers, Making graphene for macroelectronics, Nat. Nanotechnol., 3, 2008, 254-255.
J-H. Lee, E. K. Lee, W.-J. Joo, Y. Jang, B.-S. Kim, J. Y. Lim, S.-H. Choi, S. J. Ahn, J. R. Ahn, M.-H. Park, C.-W. Yang, B. L. Choi, S.-W. Hwang, D. Whang, Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium, Science, 344, 2014, 286-289.
I. W. Frank, D. M. Tanenbaum, A. M. van der Zande, P. L. McEuen, Mechanical properties of suspended graphene sheets, Journal of Vacuum Science & Technology B, 2007, 25, 2558-2561.
I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, K. L. Shepard, Current saturation in zero bandgap, top-gated graphene field-effect transistors, Nature Nanotechnol., 2008, 3, 654.
I. Childres, L. A. Jauregui, W. Park, H. Cao, Y. P. Chen, Raman Spectroscopy of Graphene and Related Materials, 2013
H.-S. Song, K.-D. Lee, J.-W. Sohn, S.-H. Yang, S. S. P. Parkin, C.-Y. You, S.-C. Shin, Relationship between Gilbert damping and magneto-crystalline anisotropy in a Ti-buffered Co/Ni multilayer system, Appl. Phys. Lett., 103, 2013, 022406.
H. Sekimoto, T. Uda, Y. Nose, S. Sato, H. Kakiuchi, Y. Awakura, Reduction of Titanium Oxide in the Presence of Nickel by Nonequilibrium Hydrogen Gas, J. Mater. Res., 24, 2009, 2391-2399.
H. Kim, A. A. Abdala, C. W. Macosko, Graphene/polymer nanocomposites, Macromolecules, 2010, 43, 6515-6530.
H. Bi, S. Sun, F. Huang, X. Xie, M. Jiang, Direct Growth of Few-Layer Graphene Films on SiO2 Substrates and Their Photovoltaic Applications, J. Mater. Chem., 22, 2012, 411-416.
G. Wang, M. Zhang, Y. Zhu, G. Ding, D. Jiang, Q. Guo, S. Liu, X. Xie, P. K. Chu, Z. Di, X. Wang, Direct growth of graphene film on germanium substrate, Sci. Rep., 3, 2013, 2465.
G. S. Kim, S. Y. Lee, J. H. Hahn, B. Y. Lee, J. G. Han, J. H. Lee, S. Y. Lee, Effects of the thickness of Ti buffer layer on the mechanical properties of TiN coatings, Surf. Coat. Tech., 171, 2003, 83-90.
G. Nandamuri, S. Roumimov, R. Solanki, Remote Plasma Assisted Growth of Graphene Films, Appl. Phys. Lett., 96, 2010, 154101.
G. Liang, N. Neophytou, M. S. Lundstrom, D. E. Nikonov, Contact effects in graphene nanoribbon transistors, Nanoletters, 2008, 8, 1819.
G. Kresse, J. Furthmuller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B, 54, 1996, 11169-1186.
G. Jo, M. Choe, S. Lee, W. Park, Y. H. Kahng, T. Lee, The application of graphene as electrodes in electrical and optical devices, Nanotechnology, 2012, 23, 112001.
F. Tseng, D. Unluer, K. Holcomb, M. R. Stan, A. W. Ghosh, Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors, Appl. Phys. Lett., 2009, 94, 223112.
F. Schwierz, Graphene transistors, Nat. Nanotechnol., 5, 2010, 487-496.
F. M. Rojas, J. F. Rossier, L. Brey, and J. J. Palacios, Performance limits of graphene-ribbon field-effect transistors, Phys. Rev. B, 2008, 77, 045301.
E. A. Brandes, Smithells Metals Reference Book, 6th edition, Ch. 8, Butterworth & Co. Ltd, 1983.
D. W. Shaw, Crystal Growth, Plenum Press, London, 1974, p. 11.
D. W. Kim, Y. H. Kim, H. S. Jeong, H. T. Jung, Direct visualization of large-area graphene domains and boundaries by optical birefringency, Nat. Nanotechnol., 7, 2012, 29-34.
D. R. Dreyer, S. Park, C. W. Bielawski, R. S. Ruoff, The chemistry of graphene oxide, Chemical Society Reviews, 2010, 39, 228-240.
D. P. E. Smith, H. H rber, C. Gerber, G. Binnig, Smectic liquid crystal monolayers on graphite observed by scanning tunneling microscopy, Science, 245, 1989, 43-45.
D. P. Cann, C. A. Randall, T. R. Shrout, Investigation of the dielectric properties of bismuth pyrochlores. Solid State Commun., 100, 1996, 529-534.
D. L. Duong, G. H. Han, S. M. Lee, F. Gunes, E. S. Kim, S. T. Kim, H. Kim, Q. H. Ta, K. P. So, S. J. Yoon, S. J. Chae, Y. W. Jo, M. H. Park, S. H. Chae, S. C. Lim, J. Y. Choi, Y. H. Lee, Probing graphene grain boundaries with optical microscopy, Nature, 490, 2012, 235-240.
D. Jariwala, A. Srivastava, P. M. Ajayan, Graphene Synthesis and Band Gap Opening, Journal of Nanoscience and Nanotechnology, 11, 2011, 6621-6641.
D. Depla, S. Mahieu, J. E. Greene, Handbook of Deposition Technologies for Films and Coatings - Chapter 5, 3rd edition, Science, Applications and Technology, 2009.
D. B. Farmer, R. G. Mojarad, V. Perebeinos, Y. M. Lin, G. S. Tulevski, J. C. Tsang, P. Avouris, Chemical doping and electron-hole conduction asymmetry in graphene devices, Nanoletters, 2009, 9, 388.
D. A. Areshkin, D. Gunlycke, C. T. White, Ballistic transport in graphene nanostrips in the presence of disorder: Importance of edge effects, Nano Lett., 2007, 7, 204.
C.-J. Xian, S.-G. Yoon, Transparent capacitor for the storage of electric power produced by transparent solar cells, J. Electrochem. Soc., 156, 2009, G180-G183.
C.-J. Xian, J.-H. Park, K.-C. Ahn, S.-G. Yoon, Electrical properties of Bi2Mg2/3Nb4/3O7 pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications, Appl. Phys. Lett., 90, 2007, 052903.
C. Lee, X. Wei, J. W. Kysar, J. Hone, Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene, Science 2008, 321, 385-388.
C. Gomez-Navarro, M. Burghard, K. Kern. Elastic properties of chemically derived single graphene sheets, Nano Letters, 2008, 8, 2045-2049.
C. Di, D. Wei, G. Yu, Y. Liu, Y. Guo, D. Zhu, Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors, Adv. Mater., 20, 2008, 3289-3293.
Blochl, P. E. Projector augmented-wave method, Phys. Rev. B, 50, 1994, 17953-17979.
B. Obradovic, R. Kotlyar, F. Heinz, P.Matagne, T. Rakshit, M. D. Giles, M. A. Stettler, Analysis of graphene nanoribbons as a channel material for field-effect transistors, Appl. Phys. Lett., 2006, 88, 142102.
B. Jang, C. H. Kim, S. T. Choi, K. S. Kim, K. S. Kim, H. J. Lee, S. Cho, J. H. Ahn, and H. H. Kim, Damage mitigation in roll-to-roll transfer of CVD-graphene to flexible substrates, 2D Mater., 4, 2017, 024002.
B. J. Park, J. S. Choi, J. H. Eom, H. Ha, H. Y. Kim, S. Lee, H. Shin, and S. G. Yoon, Defect-free graphene synthesized directly at 150 C via chemical vapor deposition with no transfer, ACS Nano, 12, 2018, 2008-2016.
B. J. Park, J. S. Choi, H. S. Kim, H. Y. Kim, J. R. Jeong, H. J. Choi, H. J. Jung, M. W. Jung, K. S. An, S. G. Yoon, Realization of Large-Area Wrinkle-Free Monolayer Graphene, Sci. Rep., 5, 20105, 9610.
B. J. Kim, H. Jang, S.-K. Lee, B. H. Hong, J.-H. Ahn, J. H. Cho, High-performance flexible graphene field effect transistors with ion gel gate dielectrics, Nano Lett., 10, 2010, 3464-3466.
B. A ssa, N. K. Memon, A. Ali, M. K. Khraisheh, Recent progress in the growth and applications of graphene as a smart material: a review, Frontiers in Materials, 2, 2015, 58.
A.K. Geim, K.S. Novoselov, The rise of graphene., Nature Materials. 6 (2007) 183– 191.
A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S. Novoselov., K. Watanabe, T. Taniguchi, A. K. Geim, Micrometer-scale ballistic transport in encapsulated graphene at room temperature, Nano Letters, 11, 2011, 2396-2399.
A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff, R. M. Wallace, The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2, Appl. Phys. Lett., 99, 2011, 122108.
A. K. Geim, Graphene: Status and prospects, Science, 2009, 4, 1530–1534.
A. K. Geim, A. H. MacDonald, Graphene: Exploring carbon flatland, Physics Today, 2007, 60, 35.
A. C. Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, A.K. Geim, The electronic properties of graphene, Reviews of Modern Physics, 81, 2009, 109.
A. Buchsteiner, A. Lerf, J. Pieper, Water dynamics in graphite oxide investigated with neutron scattering, J. Phys. Chem. B, 110, 2006, 22328-22338.
. J. B. Oostinga, H. B. Heersche, X. Liu, A. F. Morpurgo, L. M. K. Vandersypen, Gate-induced insulating state in bilayer graphene devices, Nature Mater., 2008, 7, 151.
. G. C. Liang, N. Neophytou, D. E. Nikonov, M. S. Lundstrom, Performance projections for ballistic graphene nanoribbon field-effect transistors, IEEE Trans. Electron. Dev., 2007, 54, 677.
'
Transfer-free large-scale high-quality monolayer graphene synthesized at low temperatures below 150 ℃'
의 유사주제(
) 논문