연구동향 분석
박사

Fabrication and Characterization of GaN-on-Si based RF and Power Devices = GaN-on-Si 기반의 고주파/고전력 소자의 제작 및 특성 분석

이민성 2016년

논문상세정보
인용/피인용
' Fabrication and Characterization of GaN-on-Si based RF and Power Devices = GaN-on-Si 기반의 고주파/고전력 소자의 제작 및 특성 분석' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 응용 물리
  • AlGaN/GaN HEMTs
  • Fluoride plasma treatment
  • Heterostructure field-effect transistor (HFET)
  • Individually source via (ISV)
  • amplifier
  • normally-off
  • power density
  • recessed metal-insulator-semiconductor (MIS) structure
  • x-band
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
4,736 0

0.0%

' Fabrication and Characterization of GaN-on-Si based RF and Power Devices = GaN-on-Si 기반의 고주파/고전력 소자의 제작 및 특성 분석' 의 참고문헌

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