연구동향 분석
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Density-of-States and Stability Analysis of Solution-Processed InGaZnO TFTs with Consideration of Back Channel Surface Potential and Debye Length = 용액 공정 인듐갈륨징크 산화물 박막트랜지스터의 뒷 채널 전위 및 드바이 길이를 고려한 결함구조밀도와 신뢰성에 대한 연구

임화림 2016년

논문상세정보
인용/피인용
' Density-of-States and Stability Analysis of Solution-Processed InGaZnO TFTs with Consideration of Back Channel Surface Potential and Debye Length = 용액 공정 인듐갈륨징크 산화물 박막트랜지스터의 뒷 채널 전위 및 드바이 길이를 고려한 결함구조밀도와 신뢰성에 대한 연구' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 응용 물리
  • density of states
  • gatebiasstress
  • oxide semiconductor
  • solution process
  • thin film transistor
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
4,784 0

0.0%

' Density-of-States and Stability Analysis of Solution-Processed InGaZnO TFTs with Consideration of Back Channel Surface Potential and Debye Length = 용액 공정 인듐갈륨징크 산화물 박막트랜지스터의 뒷 채널 전위 및 드바이 길이를 고려한 결함구조밀도와 신뢰성에 대한 연구' 의 참고문헌

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