박사

Studies of bend-bending effects on Ge(100) surfaces by using scanning tunneling microscopy and spectroscopy

김민성 2015년
논문상세정보
' Studies of bend-bending effects on Ge(100) surfaces by using scanning tunneling microscopy and spectroscopy' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • band-bending effect
  • charged defect
  • fermi level pinning
  • ge (100)
  • metal-insulator transition
  • scanning tunneling microscopy
  • scanning tunneling spectroscopy
  • schottky barrier
  • 금속-절연체 전이
  • 밴드 휨 현상
  • 쇼트키 장벽
  • 전하 결점
  • 주사 터널링 분광법
  • 주사 터널링 현미경
  • 페르미 준위 고정
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
61 0

0.0%

' Studies of bend-bending effects on Ge(100) surfaces by using scanning tunneling microscopy and spectroscopy' 의 참고문헌

  • Zhihui Qin, Dongxia Shi, Wei Ji, Shijin Pan, and Hong-Jun Gao, Nanotech. 17, 2396 (2006).
  • Zhen Zhang and John T. Yates, Jr., Chem. Rev. 112, 5520 (2012).
  • Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Masato Koyama and Akira Nishiyama, Jpn. J. Appl. Phys. 45, 5651 (2006).
  • Yoshiki Kamata, Mater. Today 11, 30 (2008).
  • Y. Y. Tay, T. T. Tan, M. H. Liang, F. Boey, and S. Li, Phys. Chem. Chem. Phys. 12, 6008 (2010).
  • Y. S. Yang, X. D. Wang, K. Cho, J. Kishimoto, S. Fukatsu, T. Hashizume, and T. Sakurai, Phys. Rev. B 50, 2406 (1994).
  • Y. Kuk and P. J. Silverman, Rev. Sci. Instrum. 60, 165 (1989).
  • Woojin Jung, Doohee Cho, Min-Kook Kim, Hyoung Joon Choi, and In-Whan Lyo, Proc. Natl. Acad. Sci. 108, 13973 (2011).
  • W. M. Klesse, G Scappucci, G Capellini, and M. Y. Simmons, Nanotech. 22, 145604 (2011).
  • Vladimir P. Zhdanov, Surf. Sci. 512, L331 (2002).
  • Tyler J. Grassman, Sarah R. Bishop, and Andrew C. Kummel, Surf. Sci. 602, 2373 (2008).
  • Tomonori Nishimura, Koji Kita, and Akira Toriumi, Appl. Phys. Lett. 91, 123123 (2007).
  • Tobin Kaufman-Osborn, Kiarash Kiantaj, Chorng-Ping Chang, Andrew C. Kummel, Surf. Sci. 630, 254 (2014).
  • T. Sdkamp, H. Bracht, G. Impellizzeri, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E. E. Haller, Appl. Phys. Lett. 102, 242103 (2013).
  • T. Nishimura, K. Kita, A. Toriumi, Appl. Phys. Exp. 1, 051406 (2008).
  • T. Clarysse, P. Eyben, T. Janssens, I. Ho ijk, D. Vanhaeren, A. Satta, M. Meuris, W. Vandervorst, J. Bogdanowicz, and G. Raskin, J. Vac. Sci. Technol. B 24, 381 (1989).
  • Sung-Soo Bae, Do Hwan Kim, Ansoon Kim, Soon Jung Jung, Suklyun Hong, and Sehun Kim, J. Phys. Chem. C 111, 15013 (2007).
  • Siti Kudnie Sahari, Hideki Murakami, Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Katsunori Makihara, Seiichiro Higashi, and Seiichi Miyazaki, Jpn. J. Appl. Phys. 50, 04DA12 (2011).
  • Shiyu Suna, Yun Sun, Zhi Liu, Dong-Ick Lee, Samuel Peterson, and Piero Pianetta, Appl. Phys. Lett. 88, 021903 (2006).
  • Sergej Brotzmann and Hartmut Bracht, J. Appl. Phys. 103, 033508 (2008).
  • S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices 3rd edn, Ch. 4, Wiley (2007).
  • S. Jay Chey, David G. Cahill, Surf. Sci. 380, 377 (1997).
  • S. Jay Chey and David G. Cahill, Surf. Sci. 380, 377 (1997).
  • S. Gan, L. Li, T. Nguyen, H. Qi, R.F. Hicks, M. Yang, Surf. Sci. 395, 69 (1998).
  • S. D. Kevan, Phys. Rev. B 32, 2344 (1985).
  • S. D. Kevan and N. G. Stoffel, Phys. Rev. Lett. 53, 702 (1984).
  • S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. Simoen, E. E. Haller, J. S. Christensen, P. Werner, Phys. Rev. B 77, 235207 (2008).
  • Ravi Pillarisetty ,Nature 479, 324 (2011).
  • R. Wiesendanger, Scanning Probe Microscopy and Spectroscopy, Cambridge Univ. Press (1994).
  • R. M. Feenstra, J. A. Strosio, and A. P. Fein, Surf. Sci. 181, 295 (1987).
  • R. J. Hamers and U. K. Kohler, J. Vac. Sci. Technol. A 7, 2854 (1989).
  • Po-Tsun Liu, Chen-Shuo Huang, Yi-Ling Huang, Jing-Ru Lin, Szu-Lin Cheng, Yoshio Nishi, and S. M. Sze, Appl. Phys. Lett. 96, 112902 (2010).
  • Peter Broqvist, Audrius Alkauskas, and Alfredo Pasquarello, Phys. Rev. B 78, 075203 (2008).
  • P. Wei, Y. Xu, S. Nagata, K. Narumi, H. Naramoto, Nucl. Instr. Meth. Phys. Res. B 206, 233 (2003).
  • P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009).
  • P. E. J. Eriksson, M. Adell, Kazuyuki Sakamoto, and R. I. G. Uhrberg, Phys. Rev. B 77, 085406 (2008).
  • Oguzhan Gurlu, Harold J.W. Zandvliet, and Bene Poelsema, Phys. Rev. Lett. 93, 066101 (2004).
  • N. D. Jager, Ph. Ebert, K. Urban, R. Krause-Rehberg, and E. R. Weber, Phys. Rev. B 65, 195318 (2002).
  • N. D. Jager, E. R. Weber, K. Urban, and Ph. Ebert, Phys. Rev. B 67, 165327 (2003).
  • Miki Naganawa, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller, Appl. Phys. Lett. 93, 191905 (2008).
  • Masayasu Nishizawa, Tetsuji Yasuda, Satoshi Yamasaki, Kazushi Miki, Masanori Shinohara, Nozomu Kamakura, Yasuo Kimura, and Michio Niwano, Phys. Rev. B 65, 161302 (2002).
  • M. T. Bohr, R. S. Chao, T. Ghani, and K. Mistry, IEEE Spectrum, 44, 29 (2007).
  • M. McEllistrem, G. Haase, D. Chen, and R. J. Hamers, Phys. Rev. Lett. 70, 2471 (1993).
  • M. Christian Petersen and A. Nylandsted Larsen, Phys. Rev. B 82, 075203 (2010).
  • M. Chander, Y. Z. Li, J. C. Patrin, and J. H. Weaver, Phys. Rev. B 48, 2493 (1993).
  • L. H. Chan, E. I. Altman, and Y. Liang, J. Vac. Sci. Technol. A 19, 976 (2001).
  • Kota Tomatsu, Kan Nakatsuji, Masamichi Yamada, Fumio Komori, Binghai Yan, Chiyung Yam, Thomas Frauenheim, Yong Xu, and Wenhui Duan, Phys. Rev. Lett. 103, 266102 (2009).
  • K. Prabhakarana, T. Ogino, R. Hull, J. C. Bean, L. J. Peticolas, Surf. Sci. Lett. 316, L1031 (1994).
  • K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov, and D. R. Leadley, Appl. Phys. Lett. 100, 022113 (2012).
  • Joon Sung Lee, Tobin Kaufman-Osborn, Wilhelm Melitz, Sangyeob Lee, Andrew Kummel, Surf. Sci. 605, 1583 (2011).
  • Joon Sung Lee, Sarah R. Bishop, Tyler J. Grassman, and Andrew C. Kummel, Surf. Sci. 604, 1239 (2010).
  • Joon Sung Lee, Sarah R. Bishop, Tobin Kaufman-Osborn, Evgueni Chagarov, and Andrew C. Kummel, ECS Trans. 33, 447 (2010).
  • Jason L. Pitters, Iana A. Dogel, and Robert A. Wolkow, ACS NANO 5, 1984 (2011).
  • J. Tersoff and D. R. Hamann, Phys. Rev. Lett. 50, 1998 (1983).
  • J. R. Weber, A. Janotti, and C. G. Van de Walle, Phys. Rev. B 87, 035203 (2013).
  • J. Kim, S. Liu, S. Tan, J. McVittie , K. Saraswat and Y. Nishi, ECS Trans. 3, 1191 (2006).
  • J. E. Yehoda, B. Yang, K. Vedam, and R. Messier, J. Vac. Sci. Technol. A 380, 377 (1997).
  • J. Bardeen, Phys. Rev. Lett. 6, 57 (1961).
  • J. A. Kubby, J. E. griffith, R. S. Becker, and J. S. Vickers, Phys. Rev. B 36, 6079 (1987).
  • Helmut Haesslein, Rainer Sielemann, and Christian Zistl, Phys. Rev. Lett. 80, 2626 (1998).
  • Hartmut Bracht, Phys. Status Solidi A 1, 109 (2014).
  • H. Okumura, T. Akane, S. Matsumoto, Appl. Surf. Sci. 125, 125 (1998).
  • H. Bracht, S. Schneider, R. Kube, Microelec. Eng. 88, 452 (2011).
  • H. Bracht, S. Schneider, J. N. Klug, C.Y. Liao, J. Lundsgaard Hansen, E. E. Haller, A. Nylandsted Larsen, D. Bougeard, M. Posselt, and C. Wundisch, Phys. Rev. Lett. 103, 255501 (2009).
  • H. Bracht, Phys. Rev. B 75, 035210 (2007).
  • Gerhard Munnich, Andrea Donarini, Martin Wenderoth, and Jascha Repp, Phys. Rev. Lett. 111, 216802 (2013).
  • G. W. Brown, H. Grube, M. E. Hawley, S. R. Schofield, N. J. Curson, M. Y. Simmons, and R. G. Clark, J. Appl. Phys. 92, 820 (2002).
  • G. J. de Raad, D. M. Bruls, P. M. Koenraad, and J. H. Wolter, Phys. Rev. B 66, 195306 (2002).
  • G. Binning, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett. 50, 120 (1983).
  • G. Binnig, N. Garcia, H. Rohrer, J. M. Soler, and F. Flores, Phys. Rev. B 30, 4816 (1984).
  • Esther van Vroonhoven, Harold J.W. Zandvliet, and Bene Poelsema, Phys. Rev. Lett. 91, 116102 (2003).
  • Edmund G. Seebauer and Meredith C. Kratzer, Mat. Sci. Eng. R 55, 57 (2006).
  • Duygu Kuzum, Koen Martens, Tejas Krishnamohan, and Krishna C. Saraswat, Appl. Phys. Lett. 95, 252101 (2009).
  • Do Hwan Kim, Sung-Soo Bae, Suklyun Hong, Sehun Kim, J. Phys. Chem. C 604, 129 (2010).
  • D. P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, A. Satta, V. Terzieva, L. Souriau, F. E. Leys, G. Pourtois, M. Houssa, G. Winderickx, E. Vrancken, S. Sioncke, K. Opsomer, G. Nicholas, M. Caymax, A. Stesmans, J. Van Steenbergen, P. W. Mertens, M. Meuris, and M. M. Heynsa, J. Electrochem. Soc. 155, H552 (2008).
  • D. L. Carroll, M. Wagner, M. Ruhle, and D. A. Bonnell, Phys. Rev. B 55, 9792 (1997).
  • Christian Blumenstein, Sebastian Meyer, Andreas Ruff, Benjamin Schmid, Jorg Schafer, and Ralph Claessen, J. Chem. Phys. 135, 064201 (2011).
  • Chi On Chui, Hyoungsub Kim, David Chi, Baylor B. Triplett, Paul C. McIntyre, and Krishna C. Saraswat, Tech. Dig. - Int. Electron Devices Meet., 437 (2002).
  • C. Jeon, C. C. Hwang, T.-H. Kang, K.-J. Kim, B. Kim, Y. Chung, and C. Y. Park, Phys. Rev. B 74, 125407 (2006).
  • Alexander Chroneos, Udo Schwingenschlgl, and Athanasios Dimoulas, Ann. Phys. 524, 123 (2012).
  • Akira Toriumi, Toshiyuki Tabata, Choong Hyun Lee, Tomonori Nishimura, Koji Kita, and Kosuke Nagashio, Microelec. Eng. 86, 1571 (2009).
  • A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006).
  • A. Dimoulas, P. Tsipas ,Microelec. Eng. 86, 1577 (2009).
  • A. Chroneos, R. W. Grimes, and H. Bracht, J. Appl. Phys. 106, 063707(2009).
  • A. Chroneos and H. Bracht, Appl. Phys. Rev. 1, 011301 (2014).