연구동향 분석
박사

Growth and characterizations of epitaxial Ge and polycrystalline Si layers for applications of semiconductor devices : 반도체 소자를 위한 저머늄 에피택셜 박막과 다결정 실리콘 박막의 성장 및 분석

김병주 2015년

논문상세정보
인용/피인용
' Growth and characterizations of epitaxial Ge and polycrystalline Si layers for applications of semiconductor devices : 반도체 소자를 위한 저머늄 에피택셜 박막과 다결정 실리콘 박막의 성장 및 분석' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • epitaxy
  • ge
  • in situ b doping
  • in situ p doping
  • nanobeam electron diffraction (nbd)
  • nanowire
  • polycrystalline si
  • reciprocal space mapping (rsm)
  • selective epitaxial growth (seg)
  • si3h8
  • strain
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
196 0

0.0%

' Growth and characterizations of epitaxial Ge and polycrystalline Si layers for applications of semiconductor devices : 반도체 소자를 위한 저머늄 에피택셜 박막과 다결정 실리콘 박막의 성장 및 분석' 의 참고문헌

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