연구동향 분석
박사

플라즈마 공정을 위한 2차원 플라즈마 진단 및 플라즈마 특성 분석 연구 = A study on two-dimensional plasma diagnostics and analysis of discharge characteristics for plasma processing

김영철 2015년

논문상세정보
    • 저자 김영철
    • 형태사항 xii, 109 p. :: 삽도 ;: 26 cm
    • 일반주기 지도교수: 정진욱, 권두 국문요지, Abstract 수록, 참고문헌: p. 101-107
    • 학위논문사항 한양대학교 대학원 :, 2015. 8, 나노반도체공학과,, 학위논문(박사)-
    • 발행지 서울
    • 언어 eng
    • 출판년 2015
    • 발행사항 한양대학교 대학원,
    • 주제어 반도체
    유사주제 논문( 84)
인용/피인용
' 플라즈마 공정을 위한 2차원 플라즈마 진단 및 플라즈마 특성 분석 연구 = A study on two-dimensional plasma diagnostics and analysis of discharge characteristics for plasma processing' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • 반도체
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
85 0

0.0%

' 플라즈마 공정을 위한 2차원 플라즈마 진단 및 플라즈마 특성 분석 연구 = A study on two-dimensional plasma diagnostics and analysis of discharge characteristics for plasma processing' 의 참고문헌

  • Zhu X M and Pu Y K, J. Phys. D:Appl. Phys. 40 2533 (2007)
  • Z. F. Ding. G. Y. Yuan, W. Gao and J. S. Sun, Phys. Plasmas 15 063506(2008)
  • Y. Itikawa, J. Phys. Chem. Ref. Data. 38 1 (2009)
  • Y. Itikawa, A. Ichimura, K. Onda, K. Sakimoto, K. Takayanagi, Y. Hatano,M. Hayashi, H. Nishimura and S. Tsurubuchi, J. Phys. Chem. Ref. Data. 18 23 (1989)
  • Y. D. Kim, Y. S. Kim, H. C. Lee, J. Y. Bang and C. W. Chung, Phys. Plasmas 18 033508 (2011)
  • Xu S, Ostrikov KN, Li YA, Tsakadze EL, Jones IR. Phys Plasma 8 2459(2001)
  • Ventzek P L G, Hoekstra and Kushner M J, J. Vac. Sci. Technol. B 123118 (1994)
  • V. Vahedi, M. A. Lieberman, G. DiPeso, T. D. Rognlien, and D. Hewett, J. Appl. Phys. 78 1446 (1995)
  • V. A. Godyak, V. P. Meytlis and H. R. Strauss, IEEE Trans. Plasma Sci. 23 728 (1995)
  • V. A. Godyak, R. B. Piejak, and B. M. Alexandrovich, Plasma SourcesSci. Technol. 1 36 (1992)
  • V. A. Godyak and V. I. Kolobv, Phys. Rev. Lett. 81 369 (1998)
  • Tsakadze EL, Ostrikov K, Tsakadze ZL, Vladimirov SV, Xu S. PhysPlasmas 11 3915 (2004)
  • T. W. Kim and E.S. Aydil, Plasma Sources Sci. Technol. 92 6444 (2002)
  • T. W. Kim and E.S. Aydil, J. Appl. Phys. 92 6444 (2002)
  • T. W. Kim and E.S. Aydil, IEEE Trans. Plasma Sci. 31 614 (2003)
  • T. W. Kim and E.S. Aydil, IEEE Trans. Plasma Sci. 30 120 (2002)
  • Sato N, Iizuka S, Nakagawa Y and Tsukada T, Appl. Phys. Lett. 62 1469(1993)
  • S. V. Singh, P. Kempkes, and H. Soltwisch, Appl. Phys. Lett. 89 161501(2006)
  • S. J. Oh, S. J. Oh and C. W. Chung, Rev. Sci. Instrum. 81 093501 (2010)
  • S. J. Oh, S. H. Jang, Y. C. Kim and C. W. Chung, Rev. Sci. Instrum. 81References053503 (2010)
  • S. H. Seo, J. I. Hong, K. H. Bai and H. Y. Chang, Phys. Plasmas 6 614(1999)
  • S. H. Seo, J. I. Hong and H. Y. Chang, Appl. Phys. Lett. 74 2776 (1999)
  • S. H. Jang, G. H. Kim and C. W. Chung, Thin. Solid. Films. 519 7042(2011)
  • R. Renka and R. Brown, ACM Trans. Math. Softw. 25 78 (1999)
  • R. N. Franklin and J. Snell, J. Plasma Phys. 64 131 (2000)
  • R. L. Stenzel, Rev. Sci. Instrum. 47 603 (1976)
  • R. Franke and G. Nielson, Int. J. Numer. Methods Eng. 15 1691 (1980)[75] R. Renka. ACM Trans. Math. Softw. 14 139 (1988)
  • R. D. White, R. E. Robson, K. F. Ness, and T. Makabe, J. Phys. D: Appl. Phys. 38 997 (2005)
  • Piejak R B, Godyak V A and Alexandrovich B M, Plasma Sources Sci. Technol. 1 179 (1992)
  • P. Chabert and N. Braithwaite, Physics of Radio frequency Plasmas(Cambridge: Cambridge University Press)
  • Ostrikov KN, Xu S, Shafiul Azam ABM, J. Vac. Sci. Technol A 20 251(2002)References
  • N. st J. BraiThwaite, N. M. P. Benjamin and J. E. Allen, J. Phys. E: Sci. Instrum. 20 1046 (1987)
  • N. S. Yoon, B. C. Kim, J. G. Yang and S. M. Hwang, IEEE. Trans. PlasmaSci. 26 (1998)
  • N. Hershkowitz, Plasma diagnostics, editied by O. Auciello and D. L. Flamm (Academic, San Diego, 1989)
  • N. Benjamin and R. Steger, US. patent, Publication No. US2009/0215201A1 (27 August 2009)
  • McMillin B.K and Zachariah M. R J. Appl. Phys. 77 5538 (1995)
  • M. W. Berry and K. S. Minser, ACM Trans. Math. Softw. 25 353 (1999)
  • M. M. Turner, Phys. Rev. Lett. 71 1844 (1993)
  • M. M. Turner and M. A. Lieberman, Plasma Sources Sci. Technol. 8 313(1999)
  • M. H. Lee, S. H. Jang and C. W. Chung, J. Appl. Phys. 101 033305 (2007)
  • M. H. Lee, H. C. Lee and C. W. Chung, J. Appl. Phys. 111 093301 (2012)
  • M. H. Lee and C. W. Chung, Phys. Plasmas. 13 063510 (2006)
  • M. H. Lee and C. W. Chung, Phys. Plasmas, 12 073501 (2005)
  • M. Edamura and E. C. Benck, J. Vac. Sci. Technol. A 21 470 (2003)
  • M. A. Lieberman and A. J. Lichtenberg, Principle of Plasma Dischargesand Materials Processing, 2ed. (Wiley, New York, 2004)
  • L. Tonks, Amer. J. Phys. 3 857 (1967)
  • L. Tonks and I. Langmuir, Phys. Rev. 34 876 (1929)
  • L. D. Tsendin, Sov Phy. JETP. 39 805 (1974)
  • L. D. Tsendin, Plasma Sources Sci. Technol. 20 055011 (2011)
  • L. D. Tsendin, IEEE Trans. Plasma Sci. 34 728 (2006)
  • L. D. Tsendin and Y. Golubovsky, Sov. Phys. Tech. Phys. 22 1066 (1977)References
  • Kano. K, Suzuki M, and Zkatsuka H, Plasma Sources Sci. Technol. 9 314(2000)
  • K. Wiesemann, Ann. Phys. 478 275 (1969)
  • K. T. Hwang, S. J. Oh, I. J. Choi and C. W. Chung, Phys. Plasmas 17063501 (2010)
  • K. N. Ostrikov, S. Xu and M. Y. Yu, J. Appl. Phys. 88 2268 (2000)
  • K. Dzierzega, K. Musiol, E. C. Benck and J. R. Roberts, J. Appl. Phys. 803196 (1996)
  • J. Y. Kim, H. C. Lee. Y. D. Kim, Y. C. Kim and C. W. Chung, Phys. Plasmas. 20 101612 (2013)References
  • J. Y. Kim, H. C. Lee, D. H. Kim, Y. S. Kim, Y. C. Kim and C. W. Chung,Phys. Plasmas. 21 033506 (2014)
  • J. Y. Bang, K. Yoo, D. H. Kim and C. W. Chung, Plasma Sources Sci. Technol. 20 065005 (2011)
  • J. Y. Bang and C. W. Chung, Phys. Plasmas. 16 093502 (2009)
  • J. T. Gudmundsson, J. Phys. D: Appl. Phys. 37 2073 (2004)
  • J. T. Gudmundsson and E. G. Thorstrinsson, Plasma Sources Sci. Technol. 16 399 (2007)
  • J. Hopwood, Plasma. Sources. Sci. Technol., 1, 109, (1992).
  • J. Hopwood, Plasma Sources Sci. Technol. 3 460 (1994)References
  • J. H. Kim, D. J. Seong, J. Y. Lim and K. H. Chung, Appl. Phys. Lett. 834725 (2003)
  • J. H. Keller, J. C. Forster, S. M. Barnes, J. Vac. Sci. Technol. A. 11 2487(1993)
  • J. C. Davis, Statistics and Data Analysis in Geology, 2nd ed. (Wiley, NewYork, 1986)
  • International Technology Roadmap for Semiconductor, 2010 edition. Retrieved from http://www.itrs.net/
  • I. M. El-Fayoumi, I. R. Jone and M. M. Turner, J. Phys. D. 31 3082(1998)
  • I. Kaganovich and L. D. Tsendin, IEEE Trans. Plasma. Sci. 20 86 (1992)
  • I. D. Sudit and F. F. Chen, Plasma Sources Sci. Technol. 3 162 (1994)
  • H. Sugai and K. Ohe, Plasma Electronics (Ohmsha, Tokyo, 2000)
  • H. M. Mott-Smith and I. Langmuir, Phys. Rev. 28 727 (1926)
  • H. Conrads and M. Schmidt, Plasma Sources Sci. Technol. 9 441 (2000)
  • H. C. Lee, Y. C. Kim and C. W. Chung, IEEE. Trans. Plasma Sci. 39 2536(2011)
  • H. C. Lee, M. H. Lee, and C. W. Chung, Appl. Phys. Lett. 96 071501(2010)
  • H. C. Lee, M. H. Lee and C. W. Chung, Phys. Plasmas. 17 013501 (2010)
  • H. C. Lee, M. H. Lee and C. W. Chung, Appl. Phys. Lett. 96 041503(2010)
  • H. C. Lee, J. K. Lee and C. W. Chung, Phys. Plasmas 17 033506 (2010)
  • H. C. Lee, H. J. Hwang, Y. C. Kim, J. Y. Kim, D. H. Kim and C. W. Chung,Phys. Plasmas, 20 033504 (2013)
  • H. C. Lee and C. W. Chung, Phys. Plasmas. 19 033514 (2012)
  • G. H. Kim, H. C. Lee and C. W. Chung, Phys. Plasmas. 17 073504 (2010)
  • G. Cung, B. Crowley, D. Vender and M. M. Turner, Plasma Sources Sci. Technol. 8 576 (1999)
  • G .A. Hebner and I. C. Abraham, J. Appl. Phys. 90 10 (2001)References
  • F.F. Chen, Introduction to Plasma Physics and Controlled Fusion (Plenum,New York, 1986), Vol. 1.
  • D. Shepard, Proceedings of the 23rd National Conference. pp517-523(1968)
  • D. H. Kim, H. C. Lee, Y. S. Kim and C. W. Chung, Appl. Phys. Lett, 103084103 (2013)
  • C. W. Chung, S. S. Kim, S. H. Seo, and H. Y. Chang, J. Appl. Phys. 881181 (2000)
  • C. W. Chung and H. Y. Chang, Appl. Phys. Lett. 80 1725 (2002)
  • C. Brecher and L. A. Reseberg, Phys. Rev. B. 13 81 (1976)
  • B. M. Oliver and R M. Clements. J. Appl. Phys. 41 2117 (1970)
  • A. M. Daltrini, S. A. Moshkalev, T. J. Morgan, R. B. Piejak and W. G. Graham, Appl. Phys. Lett. 92 061504 (2008)
  • A. E. Wendta, Rev. Sci. Instrum. 72 2926 (2001)