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전계효과트랜지스터 형 마이크로 센서소자의 수소가스 및 압력 감지 특성 : Field effect transistor based micro-sensor devices for hydrogen and pressure monitoring

김범준 2015년

논문상세정보
인용/피인용
' 전계효과트랜지스터 형 마이크로 센서소자의 수소가스 및 압력 감지 특성 : Field effect transistor based micro-sensor devices for hydrogen and pressure monitoring' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • catalytic metal
  • diaphragm
  • field effect transistor (fet)
  • gas sensor
  • pressure sensor
  • silicon
  • surface modification
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
331 0

0.0%

' 전계효과트랜지스터 형 마이크로 센서소자의 수소가스 및 압력 감지 특성 : Field effect transistor based micro-sensor devices for hydrogen and pressure monitoring' 의 참고문헌

  • [ Kelly, A., 1973, Strong Solids, 2nd ed., Oxford, Clarendon, pp. 79-87.
  • Zuckerwar, A. J., 1978, Theoretical response of condenser microphones, TheJournal of the Acoustical Society of America, vol. 64, pp. 1278-1285.
  • Zorman, C. A., Mehregany, M., 2002, Materials for Microelectromechanical Systemsin The MEMS Handbook, third ed., CRC Press, USA, Boca Raton, pp. 208-230.
  • Zhao, Z., Carpenter, M. A., 2005, "Annealing enhanced hydrogen absorption innanocrystalline Pd/Au sensing films," Journal of Applied Physics, vol. 97,pp.1234301.
  • Zanini, M., Visser, J. H., Rimai, L., Soltis, R. E., Kovalchuk, A., Hoffman, D. W.,Logothetis, E. M., Bonne, U., Brewer, L., Bynum, O. W., Richard, M. A., 1995,"Fabrication and properties of Si-based high-sensitivity microcalorimetric gassensor," Sensors and Actuators A: Physical, vol. 48, pp.187-192.
  • Yu, S., Welp, U., Hua, L. Z., Rydh, A., Kwok, W. K., Wang, H. H., 2005,"Fabrication of palladium nanotubes and their application in hydrogen sensing,"Chemistry of Materials, vol. 17, pp. 3445?3450.
  • Yoshlkawa, A., Suzuki, T., 1978, Properties of a movable?gate?field?effect structureas an electromechanical sensor, The Journal of the Acoustical Society of America,vol. 64, pp. 725-730.
  • Yamamoto, N., Tonomura, A., Matsuoka, T., Tsubomura, H., 1980, A study on apalladium titanium oxide Schottky diode as a detector for gaseous components,Surface Science, vol. 92, pp. 400-406.
  • Yamada, K., Nishihara, M., Kanzawa, R., Kobayashi, R., 1983, A piezoresistiveintegrated pressure sensor, Sensors and Actuators, vol . 4, pp. 63-69.
  • Xu, T., Zach, M. P., Xiao, Z. L., Rosenmann, D., Welp, U., Kwok, W. K.,Crabtree, G. W., 2005, "Self-assembled monolayer-enhanced hydrogen sensing withultrathin palladium films," Applied Physics Letters, vol. 86, pp. 203-204.
  • Wu, X. P., Ko, W. H., 1989, Compensating corner undercutting in anisotropicetching of (100) silicon, Sensors and Actuators, vol. 18, pp. 207-215.
  • Wolber, W. G., Wise, K. D., 1979, Sensor development in the microcomputerage, IEEE Transactions on Electronic Devices, vol. ED-26, pp. 1864-1979.
  • Winters, H. F., Coburn, J. W., 1979, The etching of silicon with XeF2 vapor, Applied Physical Letters, vol. 34, pp. 70-73.
  • Winquist, F., Spetz, A., Armgarth, M., Nylander, C., Lundstrom, I., 1983, Modifiedpalladium metal-oxide-semiconductor structures with increased ammonia gassensors, Applied Physics Letters, vol. 43, pp. 839-841.
  • Winquist, F., Lundstrom, I., Damelsson, B., 1985, Biosensors based on ammoniasensitive MOS structures, Digest of Technical Papers, Transducers 85, vol.SSCH2127-9, 1985, p. 162.
  • Williams, K. R., Muller, R. S., 1996, Etch rates for micromachining processing, Journal of Microelectromechcanical Systems, vol. 5, pp. 256-269.
  • Voorthuyzen, J. A., Bergveld, P., 1995, IEEE Transactions on Electronic Devices,vol. 32, pp. 1185-1190.
  • Vauchier, C., Charlot, D., Delapierre, G., Accorsi, A., 1991, "Thin-film gas catalyticmicrosensor," Sensors and Actuators B: Chemical, vol. 5, pp.33?36.
  • Varghese, O. K., Gong, D., Paulose, M., Ong, K. G., Grimes, C. A., 2003,"Hydrogen sensing using titania nanotubes," Sensors and Actuators B: Chemical,vol. 93, pp. 338?344.
  • Udrea, F., Gardner, J. W., Setiadi, D., Covington, J. A., Dogaru, T., Lu, C. C.,Milne, W. I., Design and simulations of SOI CMOS micro-hotplate gas sensors, Sensors and Actuators B: Chemical, vol. 78, pp. 180-190.
  • Tsukada, K., Kiwa, T., Migitaka, S., Goto, Y., Yokosawa, K., 2006, A study of fastresponse characteristics for hydrogen sensing with platinum FET sensor, Sensorsand Actuators B : Chemical, vol. 114, pp. 158?163.
  • Tsukada, K., Kariya, M., Yamaguchi, T., Kiwa, T., Yamada, H., Maehara, T.,Yamamoto, T., Kunitsugu, S., 2009, Dual gate FET hydrogen gas sensor, IEEESensors 2009 Conference, pp. 517-519.
  • Tsukada, K., Kariya, M., Yamaguchi, T., Kiwa, T., Yamada, H., 2010, Dual-gatefield-effect transistor hydrogen gas sensor with thermal compensation , JapaneseJournal of Applied Physics, vol. 49, pp. 024206_1-5.
  • Tompkms, F. C., 1967, The Solid-Gas Interface, Flood, E. A. ed., Dekker, USA,New York, pp. 258-279.
  • Ta?alt n, N., Ozturk, S., K l nc, N., Ozturk, Z. Z., 2011, Investigation of thehydrogen gas sensing properties of nanoporous Pd alloy films based on AAOtemplates, Journal of Alloys and Compounds, vol. 509, pp. 4701-4706.
  • Streetman, Solid, pp. 288-326.
  • Streetman, Solid, pp. 164-171.
  • Streetman, B. G., 1995, Solid state electronic devices, fourth ed,. Prentice-HallInternational, Inc., USA, New Jersey, pp. 51-61.
  • Steinsland, E., Nese, M., Hanneborg, A., Bernstein, R. W., Sandmo, H.,Kittilsland, G., 1995, Boron etch-stop in TMAH solutions, Proceedings ofTransducers 95, 8th International Conferences on Solid-State Sensors andActuators, vol. 1, pp. 190-193.
  • Steele, M. C., MacIver, B. A., 1976, Palladium/cadmium-sulfide Schottky diodes forhydrogen detection, Applied Physics Letters, vol. 28, pp. 687-688.
  • Steele, M. C., Hlle, J. W., MacIver, B. A., 1976, Hydrogen-sensitive palladium gateMOS capacitors, Journal of Applied Physics, vol., 47, pp. 2537-2538.
  • Sprenkels, A. J., Voorthuyzen, J. A., Bergveld, P., 1986, A theoretical analysis ofthe electret air-gap field-effect structure for sensor applications, Sensors andActuators, vol. 9 pp. 59-72.
  • Spetz, A., Armgarth, M., Lundstrom, I., 1987, Optimization of ammonia sensitivemetal oxide semiconductor structures with platinum gates, Sensors and Actuators,vol. 11, pp. 349-365.
  • Soderberg, D., Lundstrom, I., Svensson, C., 1980, Catalytic reactions on metalsstudied by work function measurements, Material Science Engineering, vol. 42, pp.141-144.
  • Slbbald, A., 1983, Chemical sensitive field effect transistors, Solid-State andElectron Devices, IEEE Proceedings I, vol. 130, pp. 233-244.
  • Shockley, W., Pearson, G. L., 1948, Modulation of conductance of thin films ofsemiconductors by surface charges, Physical Review, vol. 74, pp. 232-233.
  • Shivaraman, M. S., 1976, Detection of H2S with Pd-gate MOS field-effecttransistors, Journal of Applied Physics, vol. 47, pp. 3592-3593.
  • Shand, E. B., 1958, Gloss Engineering Handbook. 1st ed., McGraw-Hill, USA,New York, pp. 35-37.
  • Seidel, H., Csepregi, L., Heuberger, A., Baumgwpfirtel, H., 1990 Anisotropicetching of crystalline silicon in alkaline solutions I: Orientation dependence andbehavior of passivation layers, Journal of The Electrochemical Society, vol. 137,pp. 3612-3626.
  • Seidel, H., 1987, The mechanism of anistotropic silicon etching and its relevancefor micromachining, Proceedings of Transducers 87, 4th International Conferenceon Solid-State Sensors and Actuators, vol. 1, pp. 120?125.
  • Schwartz, B., Robbins, H., 1976, Chemical etching of silicon - IV. Etchingtechnology, Journal of The Electrochemical Society, vol. 123, pp. 1903-1909.
  • Schwartz, B., Robbins, H., 1961, Chemical etching of silicon - III. A temperaturestudy in the acid system, Journal of The Electrochemical Society, vol. 108, pp.365-372.
  • Schnakenberg, U., Benecke, W., Lwiwtchel, B., Ullerich, S., Lange, P., 1991, NH4OH based etchants for silicon micromachining: Influence of additives andstability of passivation layers, Sensors and Actuators, vol. A25, pp. 1-7.
  • Schnakenberg, U., Benecke, W., Lange, P., TMAH etchants for siliconmicromachining, Proceedings of Transducers 91, the 6th International Conferenceon Solid-State Sensors and Actuators Digest of Technical Papers, vol. 1, pp.815-818.
  • Schlapbach, L., Zuttel, A., 2001, Hydrogen-storage materials for mobileapplications, Nature, vol. 414, pp.353?358.
  • Schalwig, J., Muller, G., Eickhoff, E., Ambacher, O., Stutzmann, M., 2002, GroupIII-nitride-based gas sensors for combustion monitoring, Materials Science andEngineering B, vol. 93, pp. 207-214.
  • Sandmaier, H., Offereins, H. L., Kuhl, K., Lang, W., 1991, Corner compensationtechniques in anisotropic etching of (100)-silicon using aqueous KOH, Proceedings of Transducers 91, the 6th International Conference on Solid-StateSensors and Actuators Digest of Technical Papers. vol. 1, pp. 456?459.
  • Ruths, P. F., Ashok, S., Fonash, S. J., Ruths, J. M., 1981, A study of Pd/Sl MISSchottky barrier diode hydrogen detector, IEEE Transactions on ElectronicDevices, vol. 28, pp. 1003-1009.
  • Robins, I., Ross, J. F., Shaw, J. E. A., 1986, The logarithmic response ofpalladium gate metal insulator silicon field effect transistors to hydrogen, Proceeding of 2nd International Meeting on Chemical Sensors, vol. 1, pp. 399-402.
  • Robins, I., Ross, J. F., Shaw, J. E. A., The logarithmic response of palladium-gatemetal-insulator-silicon field-effect transistors to hydrogen, Journal of AppliedPhysics, vol. 60, pp. 843-845.
  • Robbins, H., Schwartz, B., 1960, Chemical etching of silicon - II. The system HF,HNO3, H2O and HC2C3O2, Journal of The Electrochemical Society, vol. 107, pp.108-111.
  • Robbins, H., Schwartz, B., 1959, Chemical etching of silicon - I. The system HF,HNO3, H2O and HC2C3O2, Journal of The Electrochemical Society, vol. 106, pp.505?508.
  • Ristic, L. J., H. Hughes, Shemansky, F., 1994, Bulk micromachining technology, Sensor Technology and Devices, vol. 1, pp. 49-93.
  • Resnik, D., Vrtacnik, D., Aljancic, U., Amon, S., 2000, Wet etching of siliconstructures bounded by (311) sidewalls, Microelectronic Engineering, vol. 51-52,pp. 555?566.
  • Reedilk, C. W., 1969, Field effect electroacoustic transducer, US Patent, 3436492.
  • Rabinowicz, E., 1970, Grinding damage of silicon nitride determined ceramicmaterial, Tribology, vol. 3, pp. 89.
  • Puers, B., Sansen, W., 1990, Compensation structures for convex cornermicromachining in silicon, Sensors and Actuators, vol. A23, pp. 1036-1041.
  • Poteat, T. L., Lalevlc, B., Kuhyev, B., Yousuf, M., Chen, M., 1983, MOS andSchottky diode gas sensors using transition metal electrodes, Journal of ElectronicMaterials, vol. 12, pp. 181- 214.
  • Poteat, T. L., Lalevlc, B., 1981, Pd-MOS hydrogen and hydrocarbon sensordevice, IEEE Electronic Device Letters, vol. EDL-2, pp. 82-84.
  • Poteat, T. L., B LJevic, 1982, Transition metal-gate MOS gaseous detectors, IEEE Transactions on Electronic Devices, vol. 29, pp. 123-129.
  • Petersen, K. E, 1982, Silicon as a mechanical material, Proceedings of theIEEE, vol. 70, pp. 420-457.
  • Park, Y. E., Wise, K. D., 1983, An MOS switched-capacitor readout amplifier forcapacitive pressure sensors, IEEE 1983 Custom Integrated circuits Conference,vol. 1, pp 380-384.
  • Nylander, C., Armgarth, M., Svensson, C., 1984, Hydrogen induced drift mpalladium gate metal-oxide-semiconductor structures, Journal of Applied Physics,vol. 56, pp. 1177-1188.
  • Moon, H. G., Shim, Y. S., Jang, H. W., Kim, J. S., Choi, K. J., Kang, C. Y.,2010, Highly sensitive CO sensors based on cross-linked TiO2 hollowhemispheres, Sensors and Actuators B: Chemical, vol. 149, pp. 116-121.
  • Mo, Y., Okawa, Y., Tajima, M., Nakai, T., Yoshiike, N., Natukawa, K., 2001,"Micro-machined gas sensor array based on metal film micro-heater," Sensors andActuators B: Chemical, vol. 79, pp. 175?181.
  • Miyahara, Y., Tsukada, K., Miyagi, H., 1988, Field effect transistor using a solidelectrolyte as a new oxygen sensor, Journal of Applied Physics, vol. 63, pp. 2431?2434.
  • Miura, N., Harada, T., Yoshida, N., Shimizu, Y., Yamazoe, N., 1995, Sensingcharacteristics of ISFET-based hydrogen sensor using proton-conductive thick film, Sensors and Actuators B : Chemical, vol. 24/25, pp. 499?503.
  • Middelhoek, S., Angell, J. B., Noorlag, D. J. W., 1980, Microprocessors getintegrated sensors, IEEE Spectrum, vol. 17, pp. 42-46.
  • Merlos, A., M. Acero, M. H. Bao, J. Bausells, Esteve, J., 1993, TMAH/IPAanisotropic etching characteristics, Sensors and Actuators, vol. A37-A38, pp.737-743.
  • Matsuo, T., NakaJlma, H., 1984, Characteristics of reference electrodes using apolymer gate ISFET, Sensors and Actuators, vol. 5, pp. 293-305.
  • Maluf, N., Williams, K., 2004, An Introduction to microelectromechanical systemsengineering, 2nd ed., Artech House, Inc., USA, Norwood, pp. 44-54.
  • Lundstrom, I., Svensson, C., 1985, Solid State Chemical Sensors, Janata, J. andHuber, R. J. ed., Academic Press, New York, pp. 1-63.
  • Lundstrom, I., Sundgren, H., Winquist, F., Eriksson, M., Rulcker, Spetz, A., 2007, Twenty-five years of field effect gas sensor research in Linkoping, Sensors andActuators B: Chemical, vol. 121, pp. 247-262.
  • Lundstrom, I., Soderberg, D., 1981/1982, Hydrogen sensitive MOS-structures part 2:characterization, Sensors and Actuators, vol. 2, pp. 105?138.
  • Lundstrom, I., Shlvaraman, M. S., Svenson, C. S., Lundkvlst, L., 1975, Hydrogen-sensitive MOS field effect transistor, Applied Physics Letters, vol. 26,pp. 55-57.
  • Lundstrom, I., Shivaraman, M. S., Svensson, C. M., 1975, A Hydrogen-sensitivePd-gate MOS transistor, Journal of Applied Physics, vol. 46, pp. 3876?3881.
  • Lundstrom, I., Armgarth, M., Spetz, A., Winquist, F., 1986, Physics of ammoniasensitive metal oxide semiconductor structures, Proceeding of 2nd InternationalMeeting on Chemical Sensors, vol. 1, pp. 387-390.
  • Lundstrom, I., Armgarth, M., Spetz, A., Winquist, F., 1986, Gas sensors based oncatalytic metal-gate field-effect devices, Sensors and Actuators, vol. 10, pp.399-421.
  • Lundstrom, I., 1981, Hydrogen sensitive mos-structures - Part 1: Principles andapplications, Sensors and Actuators, vol. 1, pp. 404-423.
  • Lundstrom, I., 1981, Hydrogen sensitive MOS-structures part 1: principle andapplications, Sensors and Actuators, vol. 1, pp. 403?426.
  • Lundstrcm, I., Shivaraman, S., Svensson, C., Lundkvist, L., 1975, A Hydrogensensitive MOS field-effect transistor, Applied Physics Letters, vol. 26, pp. 55?57.
  • Luna-Moreno, D., Monzon-Hernandez, D., Villatoro, J., Badenes, G., 2007, "Opticalfiber hydrogen sensor based on core diameter mismatch and annealed Pd?Au thinfilms," Sensors and Actuators B: Chemical, vol. 125, pp.66?71.
  • Lilienfeld, J. E., 1930, Method and apparatus for controlling electric currents, USPatent 1745175.
  • Li, X. Bao, M., Shen, S., 1996, Maskless etching of three-dimensional siliconstructures in KOH, Sensors and Actuators A: Physical, vol. 57, pp. 47-52.
  • Lee, Y. S., Wise, K. D., 1982, A batch-fabricated silicon capacitive pressuretransducer with low temperature sensitivity, IEEE Transactions on ElectronicDevices, vol. 29, pp. 42-48.
  • Lee, K. W., Wise, K. D., 1982, SENSIM: A simulation program for solid-statepressure sensors, IEEE Transactions on Electronic Devices, vol. 29, pp. 34-41.
  • Kuroiwa, K., Sugano, T., 1973, Vapor-phase deposition of beta silicon carbide onsilicon substrates, Journal of Electrochemical Society, vol. 120, pp. 138-140.
  • Krebs, P., Grisel, A., 1993, "A low power integrated catalytic gas sensor," Sensorsand Actuators B: Chemical, vol. 13, pp.155-158.
  • Kovacs, G. T. A., Maluf, N. I., Petersen, K. E., 1998, Bulk Micromachining ofSilicon, Proceedings of the IEEE, vol. 86, pp. 1536-1551.
  • Ko, W. H., Shao, B. X., Fung, C. D., Shen, W. J., Yeh, G. J., 1983, Capacitivepressure transducers with integrated circuits Sensors and Actuators, vol. 4, pp.403 ? 411.
  • Klaassen, E. H., Reay, R. J., Stroment, C., Kovacs, G. T. A., 1997, Micromachined thermally isolated circuits , Sensors and Actuators A,: Physical,vol. 58, pp. 43-50.
  • Kiwa, T., Tsukada, K., Suzuki, M., Tonouchi, M., Migitaka, S., Yokosawa, K., 2005, Laser terahertz emission system to investigate hydrogen gas sensors, AppliedPhysics Letters, vol. 86, pp. 261102_1-3.
  • Kim, S. O., Solak, H. H., Stoykovich, M. P., Ferrier, N. J., Pablo, J. J., Nealey,P. F., 2003, Epitaxial self-assembly of block copolymers on lithographicallydefined nanopatterned substrates , Nature, vol. 424, pp. 411-414.
  • Kim, S. D., Kim, B. J., Yoon, J. H., Kim, J. S., 2007, Design, fabrication andcharacterization of a low-power gas sensor with high sensitivity to CO gas ,Journal of Korean Physics Society, vol. 51, pp. 2069-2076.
  • Kim, K. T., Kwan, S. K., Sim, J., Cho, S. M., 2006, Hydrogen gas sensor usingPd nanowires electro-deposited into anodized alumina templates, IEEE SensorsJournal, vol. 6, pp. 509-514.
  • Kawamura. K., Yamamoto, T., 1983, A hydrogen sensitive Pd/Si tunnel MISswitching device, Proceeding of International Meetings on Chemical Sensors, pp.459-463.
  • Kawamura, K., Yamamoto, T., 1983, Hydrogen-sensitive silicon tunnel MISswitching diodes, IEEE Electronic Device Letters, vol. EDL-4, pp. 88-89.
  • Kang. W. P., Gurbuz, Y., 1994, Comparison and analysis of Pd- and Pt-GaAsSchottky diodes for hydrogen detection, Journal of Applied Physics, vol. 75, pp.8175-8181.
  • Kampen, R. P., Wolffenbuttel, R. F., 1995, Effects of 110-oriented cornercompensation structures on membrane quality and convex corner integrity in(100)-silicon using aqueous KOH, Journal of Microelectromechcanical Systems,vol. 5, pp. 91-94.
  • Jaeger, R. C., 2001, Introduction to microelectronic fabrication: Volume 5 ofmodular series on solid state devices, 2nd ed.., Prentice Hall, USA, New Jersey,pp. 1-10.
  • Ito, K., 1979, Hydrogen sensltlve Schottky barrier diodes, Surface Science, vol.86, pp. 345-352.
  • Ihantola, H. K. J., Moll, J. L., 1964, Design theory of a surface field-effecttransistor, Sold State Electronics, vol. 7, pp. 423-430.
  • Ibid, pp. 65-85.
  • Ibbotson, D. E., Mucha, J. A., Flamm, D. A., Cook, J. M., 1984, Plasmaless dryetching of silicon with fluorine-containing compounds, Journal of Applied Physics,vol. 56, pp. 2939-2942.
  • Hubert, T., Boon-Brett, L., Black, G., Banach, U., 2011, Hydrogen sensors - Areview, Sensors and Actuators B: Chemical, vol. 157, pp. 329-352.
  • Hoffman, E., Warneke, B., Kruglick, E., Weigold, J., Pister, K. S. J., 1995, 3Dstructures with piezoresistive sensors in standard CMOS, Proceedings of IEEEMicro Electro Mechanical Systems Conference, vol. 1, pp. 288-293.
  • Hecht, M. H., Vasquez, R. P., Grunthaner, F. J., 1985, A novel x-rayphotoelectron spectroscopy study of the Al/SiO2 interface, Journal of AppliedPhysics, vol. 57, pp. 5256-5261.
  • Haynes, W. M., 1958, CRC Handbook of Chemistry and Physics, 69th (Weast, R.C.) ed., Taylor & Francis Group, Hill, pp. 145-158.
  • Hagleitner, C., Koll, A., Vogt, R., Brand, O., Baltes, H., 1999, CMOS capacitivechemical microsystem with active temperature control for discrimination of organicvapors , International Conference on Proceedings of the 10th InternationalConference Solid-State Sensors and Actuators (Transducers 99), pp. 1012-1015.
  • Guidi, V., Cardinali, G. C., Dori, L., Faglia, G., Ferroni, M., Martinelli, G., Nelli, P.,Sberveglieri, G., 1998, "Thin-films gas sensor implemented on alow-power-consumption micro-machined silicon structure," Sensors and Actuators B:Chemical, vol. 49, pp. 88?92.
  • Grant, D. A., Gowar, J., 1989, Power MOSFETS - Theory and Applications, firsted., John Wiley & Sons, Inc., USA, New Jersey, pp. 81-121.
  • Gotz, A., Gracia, I., Cane, C., Lora-Tamayo, E., Horrillo, M. C., Getino, J.,Garcia, C., Gutierrez, J., 1997, A micromachined solid state integrated gassensor for the detection of aromatic hydrocarbons , Sensors and Actuators B:Chemical, vol. 44, pp. 483-487.
  • Gopel, W., Jones, T. A., Kleitz, M., Lundstrom, I., Seiyama, T., 1991, Chemical andbiochemical Sensors, Part I, VCH, Weinheim, Germany, pp. 716-723.
  • Gajda, M. A., Admed, H., Dodgson, J., 1994, CMOS-compatible silicon deviceson thin SiO2 membranes , Electronics Letters, vol. 30, pp. 28-30.
  • French, P. J., Gennissen, P. T. J., Sarro, P. M., 1997, Si epi-micromachining, Microelectronics Journal, vol. 28, pp. 449-464.
  • Favier, F., Walter, E. C., Zach, M. P., Benter, T., Penner, R. M., 2001, "HydrogenSensors and Switches from Electrodeposited Palladium Mesowire Arrays," Science,vol. 293, pp. 2227?2231.
  • F. Rumiche, H-H. Wang, J. E. Indacochea, M. L. Wang, 2008, Anodizedaluminum oxide (AAO) nanowell sensors for hydrogen detection , Sensors andActuators B: Chemical. vol.134, pp. 869-877.
  • Eyre, B, Pister, K. S. J., Gekelman, W., Multi-axis microcoil sensors in standardCMOS, Proceedings of SPIE Conferences on Micromachined Devices andComponents, vol. 1, pp. 183-191.
  • Eswaran, P., Malarvizhi, S., 2013, MEMS Capacitive Pressure Sensors: A Reviewon Recent Development and Prospective, International Journal of Engineering andTechnology, vol. 5, pp. 2734-2745.
  • Elwenspoek, M., Jansen, H. V., 2004, Silicon Micromachining, 2nd ed., CambridgeUniversity Press, United of Kingdom, Cambridge, pp. 5-66.
  • Eisele, I., Doll, T., Burgmair, M., 2001, Low power gas detection with FETsensors, Sensors and Actuators B : Chemical, vol. 78, pp. 19?25.
  • Eaton, W. P., Smith, J. H., 1997, Micromachined pressure sensors: review andrecent developments, Smart Materials and Structures, vol. 6, pp. 530-542.
  • Dobos, K., Krey, D., Zimmer, G., 1983, An integrated CO-sensitive MOStransistor, Sensors and Actuators, vol. 3, pp. 169-177.
  • Dittmar, A., Najafi, K., 2000, Special topic section on microtechniques,microsensors, microactuators, and microsystems, Transactions on BiomedicalEngineering, vol. 47, pp. 1-2.
  • Ding, D., Chen, Z., Lu, C., 2006, Hydrogen sensing of nanoporous palladiumfilms supported by anodic aluminum oxides , Sensors and Actuators B: Chemical,vol. 120, pp.182-186.
  • Di Meo Jr., F., Chen, I. S., Chen, P., Neuner, J., Roerhl, A., Welch, J., 2006,"MEMS-based hydrogen gas sensors," Sensors and Actuators B: Chemical, vol.117, pp.10?16.
  • Dee, C. W., 1980, Silicon nitride: Tribological applications of a ceramic material, Tribology, vol. 127, pp. 89-92.
  • Dalin, J., 2002, Fabrication and characterisation of a novel MOSFET gas sensor, thesis, Linkopings Institute of Technology, Freiburg, Sweden.
  • Cullity, B. D., Stock, S. R., 2001, Elements of X-Ray Diffraction, third ed.,Prentice Hall, USA, New Jersey, pp. 405-438.
  • Couput, J. P., Cornut, B., Chambu, C., Chauvet, F., 1983, A reversible hydrogensulfide sensitive Pd-gate MOS transistor, Proceeding of International Meeting onChemical Sensors, vol. 1, pp. 468-472.
  • Cook, B., An Introduction to Fuel Cells and Hydrogen Technology, Heliocentris,Canada, 2001, pp. 453-476.
  • Conrad, H., Ertl, G., Latta, E. E., 1974, Adsorption of hydrogen on palladiumsingle crystal surfaces, Surface Science, vol. 41, pp. 435-446.
  • Colinge, Physics, pp. 230-234.
  • Colinge, J. P., Colinge, C. A., 2002, Physics of semiconductor devices, first ed,.Kluwer Academic Publishers, USA, Massachusetts, pp. 73-89.
  • Coburn, J. W., Winters, H. F., 1979, Plasma etching - A discussion ofmechanisms, Journal of Vacuum Science and Technology, vol. 16, pp. 391-403.
  • Coburn, J. W., Winters, H. F., 1979, Ion- and electron-assisted gas-surfacechemistry - An important effect in plasma etching, Journal of Applied Physics,vol. 50, pp. 3189?3196.
  • Clark, S. K., Wise, K. D., 1979, Pressure sensitivity in anisotropically etchedthin-diaphragm pressure sensors, IEEE Transactions on Electronic Devices, vol.26, pp. 1887-1896.
  • Christofides, C., Mandelis, A., 1990, Solid-state sensors for trace hydrogen gasdetection, Journal Applied Physics, vol. 68, pp. 1-30.
  • Chen, H. I., Chou, Y. I., Chu, C. Y., 2002, A novel high-sensitive Pd/InPhydrogen sensor fabricated by electroless plating, Sensors and Actuators B:Chemical, vol. 85, pp. 10-18.
  • Chang, F. I., Yeh, R., Lin, G., Chu, P. B., Hoffman, E., Kruglick, E. J., Pister, K.S. J. Hecht, M. H., 1995, Gas-phase silicon micromachining with xenondifluoride, Proceedings of SPIE Microelectronic Structures andMicroelectromechanical Devices for Optical Processing and MultimediaApplications, vol. 2641, pp. 117-128.
  • Cavicchi, R. E., Suehle, J. S., Kreider, K. G., Shomaker, B. L., Small, J. A.,Gaitan, M., Chaparala, P., 1995, "Growth of SnO2 films onmicromachinedhotplates," Applied Physics Letters, vol. 66, pp.812?814.
  • Cassrdy, J., Pons, S., Janata, J., 1986, Hydrogen response of palladium coatedsuspended gate field effect transistor, Analytical Chemistry, vol. 58, pp.1757-1761.
  • Buttner, W. J., Post, M. B., Burgess, R., Rivkin, C., 2011, An overview ofhydrogen safety sensors and requirements, International Journal of HydrogenEnergy, vol. 36, pp. 2462-2470.
  • Briand, D., Schoot, B., Rooij, N. F., Sundgren, H, Lundstrom, I., 2000, Alow-power micromachined MOSFET gas sensor, Journal of MicroelectromechanicalSystems, vol. 9, pp. 303-308.
  • Bousse, L., Rooij, N. F., Bergveld, P., 1983, Operation of chemically sensitive fieldeffect sensors as a function of the insulator-electrolyte interface, IEEE TransElectronic Devices, vol. ED-30, pp. 1263-1270.
  • Bogenschwirtz, A. F., Krusemark, W., Lwpcherer, K. H., Mussinger, W., 1967, Activation energies in the chemical etching of semiconductors inHNO3-HF-CHSCOOH, Journal of Electrochemical Society: Solid State, vol. 114,pp. 970?973.
  • Blackburn, G. F., Levy, M., Janata, J., 1983, Field effect transistor sensitive todipolar molecules, Applied Physics Letters, vol. 43, pp. 700-701.
  • Bhattacharyya, P., Basu, P. K., 2008, "A low power MEMS gas sensor based onnanocrystalline ZnO thin films for sensing methane," Microelectronics Reliability, vol.48, pp.1772?1779.
  • Bergveld, P., Rooij, N. F., 1981, The history of chemically sensitive semiconductordevices, Sensors and Actuators, vol. 1, pp. 5-15.
  • Bergveld, P., 1985, The impact of MOSFET-based sensors, Sensors andActuators, vol. 8, pp. 109-127.
  • Berg, A., Bergveld, P., Remhout, D. N., Sudholter, E. J. R., 1985, Sensitivitycontrol of ISFETs by chemical surface modification, Sensors and Actuators, vol. 8,pp. 129-148.
  • Bean, K. E., 1978, Anisotropic etching of silicon, IEEE Transactions onElectronic Devices, vol. ED-25, pp. 1185-1193.
  • Bassous, E., 1978, Fabrication of novel three-dimensional microstructures by theanisotropic etching of (100) and (110) silicon, IEEE Transactions on ElectronicDevices, vol. ED-25, pp. 1178-1185.
  • Atashbar, M. Z., Banerji, D., Singamaneni, S., 2005, "Room-temperature hydrogensensor based on palladium nanowires," IEEE Sensors Journal, vol. 5, pp. 792?797.
  • Alireza. S., Moharam. G., 2011, Selectivity enhancement of MOSFET hydrogensensor with transparent ITO gate, IEEE Sensors Journal, vol. 11, pp. 1201-1205.
  • Ahlmada, K., Yano, M., 1980, Application of catheter-tip ISFET for continuous invivo measurement, Medical & Biological Engineering and Computing, vol. 18, pp.741-745.
  • Ackehd, U., Wmquist, F., Lundstrom, I., 1986, Metal-oxide-semiconductor structureswith thermally activated sensitivity to ethanol vapour and unsaturatedhydrocarbons, Proceedings of 2nd International Meeting on Chemical Sensors, vol.1, pp. 395-398.
  • Ackehd, U., Armgarth, M., Spetz, A., Lundstrom, I., 1985, Ethanol sensitivity ofpalladium-gate metal-oxide-semiconductor structures, IEEE Electronic DeviceLetters, vol. EDL-7, pp. 353-355.