연구동향 분석
박사

Gate Modification of Silicon Carbide-based Field Effect Transistors for Power Device Applications = Gate Modification of Silicon Carbide-based Field Effect Transistors for Power Device Applications

강민석 2015년

논문상세정보
인용/피인용
' Gate Modification of Silicon Carbide-based Field Effect Transistors for Power Device Applications = Gate Modification of Silicon Carbide-based Field Effect Transistors for Power Device Applications' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • buried p-region
  • double-implanted mosfet(dnisfet)
  • field-effect transister
  • gate modification
  • power device
  • silicon carbide
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
108 0

0.0%

' Gate Modification of Silicon Carbide-based Field Effect Transistors for Power Device Applications = Gate Modification of Silicon Carbide-based Field Effect Transistors for Power Device Applications' 의 참고문헌

  • stling, M., Ghandi, R., Zetterling, C. -M, Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium, 2011.
  • Zetterling, C. -M, Process Technology for Silicon Carbide Devices, INSPEC, IEEE, 2002.
  • Z. Chen , J. M. Guerrero and F. Blaabjerg, IEEE Trans. Power Electron., vol. 24, no. 8, p.1859, 2009.
  • Y. Zhang, Y. Tan, H. L. Stormer, and P. Kim, Nature (London) 438, 201, 2005.
  • Y. Okuto and C.R. Crowell, Solid-State Electronics, vol. 18, no. 2, p. 161, 1975.
  • Y. Miyamoto and B. D. Yu, Appl. Phys. Lett. 80, 586, 2002.
  • Y. C. Choi, H. Y. Cha, Lester F. Eastman, and Michael G. Spencer, IEEE Trans. Electron Devices, vol. 52, p. 1940, 2005.
  • Xia, Y., Yang, P., Sun, Y., Wu, Y., Mayers, B., Gates, B., Yin,Y., Kim, F., Han, H. AdV. Mater., vol. 15, no. 353, 2003.
  • X.L. Wang, D. Cai, H. Zhang, J. Cryst. Growth, vol.305, p. 122, 2007.
  • X. H. Sun, C. P. Li, W. K. Wong, N. B. Wong, C. S. Lee, S. T. Lee, and B. K. Teo, J. Am. Chem. Soc. 124, 14464, 2002.
  • W.R.L. Lambrecht, S. Limpijumnong, S.N. Rashkeev, B. Segall, Phys. Status Solidi (B), vol. 202, p. 5, 1997.
  • W.J. Choyke, Mater. Res. Bull., vol. 4, 1969.
  • W. Eberle, Z. Zhang, Y.-F. Liu and P. Sen, IEEE Trans. Power Electron., vol. 24, no. 3, p.700, 2009.
  • W. E. Nelson, F. A. Halden, and A. Rosengreen, J. of Appl. Phys. 37, p.333, 1966.
  • V.V. Afanasev, M. Bassler,G. Pensl, and M. Schulz, Phys. Stat. Sol. (A), vol. 162, p. 321, 1997.
  • V. V. Afanas’ev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A, vol. 162, 1997.
  • V. Pancholi, D. Mallick, Ch. AppaRao, I. Samajdar, O.P. Chakrabarti, H.S. Maiti, R. Majamdar, J. Eur. Ceram. Soc., vol. 27, p. 367, 2007.
  • V. A. K. Temple, IEDM Tech. Dig., pp. 423?426, 1977.
  • Tang, C. C., Fan, S. S., Dang, H. Y., Zhao, J. H., Zhang, Z., Li,P., Gu, Q. J. Cryst. Growth, vol. 210, no. 595, 2000.
  • T. Tamaki, Ginger G. Walden, Y. Sui, and James A. Cooper, IEEE Trans. Electron Devices, vol. 55, p. 1920, 2008.
  • T. Ouisse, N. Becourt, C. Jausaud, and F. Templier, J. Appl. Phys., vol. 75, 1994.
  • T. Hiyoshi, T. Masuda, K. Wada, S. Harada, and Y. Namikawa, Mater. Sci. Forum, vol. 740-742, p. 506, 2013.
  • T. Gachovska , J. L. Hudgins , A. Bryant , E. Santi , H. A. Mantooth and A. K. Agarwal, IEEE Trans. Power Electron., vol. 27, no. 10, p.4338, 2012.
  • T. Funaki , J. C. Balda , J. Junghans , A. S. Kashyap , H. A. Mantooth , F. Barlow , T. Kimoto and T. Hikihara, IEEE Trans. Power Electron., vol. 22, no. 4, p.1321, 2007.
  • Spadavecchia J, Prete P, Lovergine N, Tapfer L, and Rella P, J. Phys. Chem. B, 109:17347-17349, 2005.
  • Son, N.T., P. N. Hai, W. M. Chen, C. Hallin, B. Monemar, and E. Janzen, Phys. Rev. B 61,16,p. 10544, 2000.
  • SILVACO ATLAS User’s Manual, SILVACO Inc., Santa Clara, CA 95054, 2012.
  • S.M. Sze, Semiconductor Devices, 2nd ed, Wiley, New York, 2001.
  • S. Ogino, T. Oikawa, and K. Ueno, Mater. Sci. Forum, vol. 338?342, p. 1101, 2000.
  • S. J. Yang, C. K. Kim, I. H. Noh, S. W. Jang, K. H. Jung, and N. I. Cho, Diamond Relat. Mater, vol. 13, p. 1149, 2004.
  • S. Inaba, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, H. Hazama, M. Yoshimi, and A. Toriumi, IEEE Trans. Electron Devices, vol. 41, p. 2399, 1994.
  • S. Hino, T. Hatayama, J. Kato, E. Tokumitsu, N. Miura, and T. Oomori, Appl. Phys. Lett., vol. 92, p. 183503, 2008.
  • S. H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams IEEE Trans. Electron Devices, vol. 23, p. 321, 2002.
  • S. H. Ryu , S. Krishnaswami , M. O €™ Loughlin , J. Richmond , A. Agarwal , J. Palmour and A. R. Hefner, IEEE Electron Device Lett., vol. 25, no. 8, p.556, 2004.
  • S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices, vol. 27, p. 356, 1980.
  • Ruffino F, Crupi I, Irrera A, and Grimaldi MG: Pd/Au/SiC Nanostructured Diodes for Nanoelectronics, IEEE Trans Nanotechnology,, 9:414-421, 2010.
  • Rozen, J., Dhar, S., Zvanut, M. E., Williams, J. R. & Feldman, L. C., J. Appl. Phys. vol. 105, 2005.
  • Raghunathan, R., Baliga, B.J., Appl. Phys. Lett., 72, 24, p.3196, 1998.
  • R.J. Callanan, A. Agarwal, A. Burk, M. DAS, F. Husna, A. Powell, et al., in IEEE industrial electronics 34th annual conference - IECON 2008, p. 2885, 2008.
  • R. W. Johnson, C. Wang, Y. Liu, and J. D. Scofield, IEEE Transactions on Electronics Packaging Manufacturing, vol. 30, no. 3, p. 182, 2007.
  • R. W. De Donker, D. M. Diwan and M. H. Kheraluwala, IEEE Trans. Ind. Applicat., Vol 27, p. 63, 1991.
  • R. A. Wood and T. E. Salem, IEEE Trans. Power Electron., vol. 26, no. 9, p.2504, 2011.
  • Q. Wahab, T. Kimoto, A. Ellison, C. Hallin, M. Tuominen, R. Yakimova, A. Henry, J. P. Bergman, and E. Janz n, Appl. Phys. Lett. vol. 72, 445, 1998.
  • P. Grivickas, V. Grivickas, J. Linnros, A. Galeckas, J. Appl. Phys., vol. 101, p. 123510, 2007.
  • P. G. Neudeck, R. S. Okojie, and L. Chen, Proceedings of the IEEE, vol. 90, no. 6, p. 1065, 2002.
  • P. G. Neudeck, D. J. Spry, L. Y. Chen, R. S. Okojie, G. M. Beheim, R. Meredith, and T. Ferrier, Mater. Sci. Forum, vol. 556/557, p. 831, 2007.
  • P. Bhatnagar, A.B. Horsfall, N.G. Wright, C.M. Johnson, K.V. Vassilevski, A.G. O’Neill, Solid-State Electronics, vol. 49, p. 453, 2005.
  • Neudeck PG, Silicon Carbide Technology. The VLSI Handbook, Chapter 5 (Editor Wai-Kai Chen, CRC Press, Second Edition), 2006.
  • N. S. Saks, S. S. Mani, and A. K. Agrwal, Appl. Phys. Lett., vol. 76, p. 2250, 2000.
  • M. Menon, E. Richter, A. Mavrandonakis, G. Froudakis, and A. N. Andriotis, Phys. Rev. B 69, 115322, 2004.
  • M. Martin, A. Saha, and James A. cooper, IEEE Trans. Electron Devices, vol. 51, p. 1721, 2004.
  • M. Kanaya, J. Takahashi, Yu. Fujiwara, A. Moritani, Appl. Phys. Lett., vol. 58, p. 56, 1991.
  • M. K. Das, J. A. Cooper, and M. R. Melloch, J. Electron. Mater., vol. 27, p.353, 1998.
  • M. K. Das, B. S. Um, and J. A. Cooper Jr., Mater. Sci. Forum, vol. 338?342, p.338, 2000.
  • M. Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, and E. D. Williams, Nano Lett. 7, 1643, 2007.
  • M. Helsper, and B. Brendel, in Proc. European Conference on Power Electronics and Applications (EPE), p. 1, 2009.
  • M. Bhantnagar, and B. J. Baliga, IEEE Trans. Electron Devices, vol. 40, p. 645, 1993.
  • M. Babler, P. Kanschat, F. Umbach, and C. Schaeffer, in PCIM Europe Conference, 2006.
  • Lutz J., Schlangenotto H., Scheuermann U., De Doncker R., Semiconductor Power Devices, Springer, 2011.
  • Lorenz L, Deboy G, Knapp A, and Marz M, in Proc. IEEE Int. Symp. PowerSemiconductor Devices ICs, p. 3, 1999.
  • Lee S-K, Zetterling CM, stling M, berg I, Magnusson MH, Deppert K, Wernersson LE, Samuelson L, and Litwin A, Solid State Electron, 46:1433-1440, 2002.
  • Langhuth H, Fr d rick S, Kaniber M, Finley J, and R hrmair U, J. Fluoresc, 21: 539-543, 2011.
  • L. Q. Huang, B. B. Liu, Q. Z. Zhu, S. H. Chen, M. C. Gao, F. W. Qin, and D. J. Wang, Appl. Phys. Lett., vol. 100, no. 26, p. 263503, 2012.
  • L. A. Lipkin and J.W. Palmour, J. Electron. Mater., vol. 25, p. 909, 1996.
  • Kurnia A, Stielau O.H, Venkataramanan G, Divan, D.M, Power Electronics specialist conference, vol. 2, p. 1011, 1992.
  • Kharlamov, A. I., Loichenko, S. V., Kirillova, N. V., Fomenko,V. V., Bondarenko, M. E., Zaitseva, Z. A. Inorg. Mater., vol. 39, no. 260, 2003.
  • Kang MS, Ahn JJ, Moon KS, and Koo SM, Nanoscale Research Letters, 7:75, 2012.
  • K. Sheng, L. C. Yu, J. Zhang, and J. H. Zhao, Solid State Electron., vol. 50, no. 6, p. 1073, 2006.
  • K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature (London) 438, 197, 2005.
  • K. Matocha, Solid-State Electron, vol. 52, p. 1631, 2008.
  • K. Endo, Y. Ishikawa, Y. Liu, M. Masahara, T. Matsukawa, S. I. O’uchi, K. Ishii, H. Yamauchi, J. Tsukada, and E. Suzuki, IEEE Electron Device Lett., vol. 28, no. 1123, 2007.
  • J.W. Slotboom, H.C. de Graaff, Solid-State Electronics, vol. 19, p. 857, 1976.
  • J. Zhuge, Y. Tian, R. Wang, R. Huang, Y. Wang, B. Chen, J. Liu, X. Zhang, and Y. Wang, IEEE Transactions on Nanotechnology, vol. 9, no. 114, 2010.
  • J. Y. Mori and H. Kohno, Nanotechnology, vol. 20, 2009.
  • J. W. Palmour, S. T. Allen, R. Singh, L. A. Lipkin, and D. G. Waltz, vol. 142, p.813, 1996.
  • J. W. Palmour, R. Singh, L. A. Lipkin, and D. G. Waltz, Trans. 3rd Int. Conf. High-Temperature Electronics (HiTEC), vol. 2, 1996.
  • J. Richmond, S. H. Ryu, S. Krishnaswami, A. Agarwal, J. Palmour, B. Geil, D. Katsis, and C. Scozzie, Mater. Sci. Forum, vol. 527?529, p. 1445, 2006.
  • J. Pernot, W. Zawadzki, S. Contreras, J.L. Robert, E. Neyret, L. Di Cioccio, J. Appl. Phys., vol. 90, p. 1869, 2001.
  • J. N. Shenoy, J. A. Cooper Jr., and M. R. Melloch, IEEE Electron Device Lett., vol. 18, p.93, 1997.
  • J. M. Knaup, P. De k, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. Choyke, Phys. Rev. B, vol. 71, 2005.
  • J. K. Reed, J. McFarland, J. Tangudu, E. Vinot, R. Trigui, G. Venkataramanan, S. Gupta, and T. Jahns, in IEEE Vehicle Power and Propulsion Conference, p. 1, 2010.
  • J. H. Choi, L. Latu-Romain, T. Chevolleau, T. Baron, and E. Bano, Mater. Sci. Forum, vol. 893, 2012.
  • J. A. Cooper, Jr. and A. K. Agarwal, Proc. IEEE, vol. 90, 2002.
  • J. A. Carr , D. Hotz , J. C. Balda , H. A. Mantooth , A. Ong and A. Agarwal, IEEE Trans. Power Electron., vol. 24, no. 1, p.260, 2009.
  • J. A. Carr , D. Hotz , J. C. Balda , H. A. Mantooth , A. Ong and A. Agarwa, IEEE Trans. Power Electron., vol. 24, no. 1, p.260, 2009.
  • I. Yonenaga, T. Hoshi, and A. Usui, J. Phys. Condens. Mater. 12, p.10319, 2001.
  • I. J. McColm, Ceramic Hardness, Plenum Press, New York, 1990.
  • Huebsch N, Mooney DJ, Nature, vol. 462, 2009.
  • Honggang Sheng, Zheng Chen, Wang F, Millner A, Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition, p. 1572, 2010.
  • Han, W. Q., Fan, S. S., Li, Q. Q., Liang, W. J., Gu, B. L., Yu, D., P. Chem. Phys. Lett., vol. 265, no. 374, 1997.
  • H. Zhang, L. M. Tolbert, J. H. Han, M. S. Chinthaval and F. Barlow, in Proc. IEEE Appl. Power Electron. Conf. Expo., p.1108, 2010.
  • H. Yano, T. Hirao, T. Kimoto, H. Matsunami, and H. Shiomi, Appl. Phys. Lett., vol. 81, no. 25, p. 4772, 2002.
  • H. Yano, H. Nakao, T. Hatayama, Y. Uraoka and T. Fuyuki: Mater. Sci. Forum Vol. 556-557, p. 807, 2007.
  • H. Nakao, H. Mikami, H. Yano, T. Hatayama, Y. Uraoka and T. Fuyuki, Mater. Sci. Forum Vol.527-529, p.1293, 2006.
  • H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, and N. Hatta, Phys. Stat. Sol. (b) 245, p. 1272, 2008.
  • H. Li, S. Dimitrijev, H. B. Harrison, and D. Sweatman, Appl. Phys. Lett., vol. 70, p. 2028, 1997.
  • Guichao Hua, Ching-Shan Leu, Yimin Jiang and Lee F.C.Y., IEEE Trans. Power Electronics, Vol 9, p. 213, 1994.
  • G.Y. Chung, C. C. Tin, J. H.Won, and J. R.Williams, Mater. Sci. Forum, vol. 338?342, p. 1097, 2000.
  • G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Dev. Lett. vol. 22, 2001.
  • G. Y. Chung et al., in Proc. 2000 IEEE Aerospace Conf., vol. 1, p. 1001, 2000.
  • G. Y. Chung et al., Appl. Phys. Lett., vol. 76, p. 1713, 2000.
  • G. W. Hunter, P. G. Neudeck, R. S. Okojie, G. M. Beheim, J. A. Powell, and L. Chen, J. Turbomach., vol. 125, no. 4, p. 658, 2003.
  • G. Michot, A. George, A. Chabli-Brenac, and E. Molva, Scr. Metall. 22, p.1043, 1988.
  • F. Devynck, A. Alkauskas, P. Broqvist, and A. Pasquarello, Phys. Rev. B, vol. 83, 2011.
  • Dreike, P.L., Fleetwood, D.M., King, D.B., Sprauer, D. C., Zipperian, T.E., Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on , vol.17, no.4, pp.594,609, 1994.
  • Dai, H. J., Wong, E. W., Lu, Y. Z., Fan, S. S., Lieber, C. M. Nature, vol. 375, no. 769, 1995.
  • D.C. Sheridan, G. Niu, J.N. Merrett, J.D. Cressler, C. Ellis, and C.C. Tin, Solid-State Electronics, vol. 44, p. 1367, 2000.
  • D. Peters, D. Schorner. K.-H. H lzlein, and P. Friedrichs, Appl. Phys. Lett. vol. 71, 1997.
  • D. Jiang, R. Burgos, F. Wang, and D. Boroyevich, IEEE Trans. Power Electronics., vol. 27, no. 2, p. 1013, 2012.
  • Chen QZ, Boccaccini AR, J Biomed Mater Res A, vol. 77, 2006.
  • C.C. Hung et al., Materials Science Forum, vol. 740-742, p. 711, 2013.
  • C. Persson, U. Lindefelt, J. Appl. Phys., vol. 82, p. 5496, 1997.
  • C. Buttay, D. Planson, B. Allard, D. Bergogne, P. Bevilacqua, C. Joubert, M. Lazar, C. Martin, H. Morel, D.Tournier, and C. Raynaud, Materials Science and Engineering: B, vol. 176, no. 4, p. 283, 2011.
  • C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, Science 312, 1191, 2006.
  • B. Wrzecionko, J. Biela, and J. W. Kolar, in Proc. IECON, p. 3834, 2009.
  • B. J. Baliga, Proc. IEEE, vol. 82, 1994.
  • B. J. Baliga, "Fundamentals of Power Semiconductor Devices,"New York: Springer-Verlag, 2008.
  • B. Baumeier, P. Kr ger, and J. Pollmann, Phys. Rev. B 76, 085407, 2007.
  • Anant Agarwal, Robert Callanan, Mrinal Das, Brett Hull, James Richmond, Sei-Hyung Ryu and John Palmour, European Conference on Power Electronics and Applications, p. 1, 2009.
  • Anant Agarwal, Mrinal Das, Brett Hull, Sumi Krishnaswami, John Palmour, James Richmond, Sei-Hyung Ryu, Jon Zhang, Device Research Conference, p. 155, 2006.
  • Ahuja, R., Ferreira da Silva, A. , Persson, C., J. M. Osorio-Guillen, I. Pepe, K. Jarrendahl, O. P. A. Lindquist, N. V. Edwards, Q. Wahab, B. Johansson, J. Appl. Phys., 91,4, p. 2099, 2002.
  • A.K. Agarwal, F. Husna, S. Haney, S.-H. Ryu, IEEE Electron Dev. Lett., vol. 28, no. 7, p. 587, 2007.
  • A. van Duijn-Arnold, Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N, Phys. Rev. B 64, p. 085206, 2001.
  • A. Saha, and James A. Cooper, IEEE Trans. Electron Devices, vol. 54, p.2786, 2007.
  • A. Maity, D. Kalita, T.K. Kayal, T. Goswami, O.P. Chakrabarti, H.S. Maiti, P.G. Rao, Ceram. Int., vol. 36, p. 323, 2010.
  • A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183 (2007).
  • A. K. Agarwal, S. Seshadri, and L. B. Rowland, IEEE Electron Device Lett., vol. 18, no. 12, p.592,1997.
  • A. K. Agarwal, R. R. Siergiej, S. Seshadri, M. H. White, P. G. McMullin, A. A. Burk, L. B. Rowland, C. D. Brandt, and R. H. Hopkins, Mater. Res. Soc. Symp. Proc., vol. 423, p.8, 1996.
  • A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, and C. D. Brandt, IEEE Electron Device Lett., vol. 18, p.518, 1997.
  • A. Itoh, T. Kimoto, and H. Matsunami, IEEE Electron Device Lett., vol. 17, p.139, 1996
  • A. Galeckas, P. Grivickas, V. Grivickas, V. Bikbajevas, J. Linnros, Phys. Status Solidi (A), vol. 191, p. 613, 2002.
  • A. Elasser, M. H. Kheraluwala, M. Ghezzo, R. L. Steigerwald, N. A. Evers, J. Kretchmer, and T. P. Chow, IEEE Trans. Ind. Appl., vol. 39, p. 915, 2003.
  • A. Elasser and T. P. Chow, in Proc. IEEE, vol. 90, no. 6, p. 969, 2002.
  • ?H. Ruething, F. Umbach, O. Hellmund, P. Kanschat, and G. Schmidt, in IEEE Proc. Power Semiconductor Devices and ICs (ISPSD), p. 63, 2003.