연구동향 분석
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Si1-xGex crystallization for vertical channel in VNAND : 수직 구조 낸드 플래시 메모리 내 수직 채널 적용 목적으로의 Si1-xGex 결정화 연구

이상수 2015년

논문상세정보
인용/피인용
' Si1-xGex crystallization for vertical channel in VNAND : 수직 구조 낸드 플래시 메모리 내 수직 채널 적용 목적으로의 Si1-xGex 결정화 연구' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • grain growth
  • in situ transmission electron microscopy (tem)
  • si1-xgex
  • solid phase crystallization (spc)
  • transmission electron microscopy (tem)
  • vertical nand flash memory (vnand)
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
44 0

0.0%

' Si1-xGex crystallization for vertical channel in VNAND : 수직 구조 낸드 플래시 메모리 내 수직 채널 적용 목적으로의 Si1-xGex 결정화 연구' 의 참고문헌

  • “세계 최초 3차원 수직구조낸드(3D V-NAND)플래시 메모리 양산”
    120Samsung Electronics Company, , Retrived on January 28 2015 fromhttp://www.samsung.com/sec/news/local/samsung-electronic-the-vertical-structureof-the-worlds-first-3d-nand-d-vnand-flash-memory-production [2013]
  • “2013 Executive Summary”, The International Technology Roadmap forSemiconductors, 2013, Retrived on January 28 2015 fromhttp://www.itrs.net/Links/2013ITRS/Summary2013.htm
  • Z. Jin, H. S. Kwok and M. Wong, "High-performance polycrystallineSiGe thin-film transistors using Al2O3 gate insulators", IEEE Electron DeviceLetters, 19, 502 (1998).
  • Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok and M. Wong, "Nickel inducedcrystallization of amorphous silicon thin films", Journal of Applied Physics 84, 194(1998).
  • Y.-H. Son, S. Lee, K. Hwang, S. J. Baik and E. Yoon, "Laser-InducedEpitaxial Growth Technology for Monolithic Three Dimensional IntegratedCircuits", ECS Journal of Solid State Science and Technology 2, 230 (2013).
  • Y.-H. Son, S. J. Baik, S. Jeon, J.-W. Lee, G. Hwang, Y. G. Shin and E.Yoon, "Highly Manufacturable Device Isolation Technology Using Laser-Induced121Epitaxial Growth for Monolithic Stack Devices", Electron Devices, IEEETransactions on 58, 3863 (2011).
  • Y. Wada and S. Nishimatsu, "Grain Growth Mechanism of HeavilyPhosphorus?Implanted Polycrystalline Silicon", Journal of The ElectrochemicalSociety 125, 1499 (1978).
  • Y. Kawazu, H. Kudo, S. Onari and T. Arai, "Low-temperaturecrystallization of hydrogenated amorphous silicon induced by nickel silicideformation", Japanese journal of applied physics 29, 2698 (1990).
  • Y. Fukuzumi, Y. Matsuoka, M. Kito, M. Kido, M. Sato, H. Tanaka, Y.Nagata, Y. Iwata, H. Aochi and A. Nitayama, “Optimal integration andcharacteristics of vertical array devices for ultra-high density, bit-cost scalableflash memory”, presented at the IEDM, 2007, pp. 449-452.
  • X.-Z. Bo, N. Yao, S. R. Shieh, T. S. Duffy and J. Sturm, "Large-grainpolycrystalline silicon films with low intragranular defect density by lowtemperaturesolid-phase crystallization without underlying oxide", Journal ofapplied physics 91, 2910 (2002).
  • W. Read Jr, "XVI. Scattering of electrons by charged dislocations insemiconductors", Philosophical Magazine 46, 111 (1955).
  • V. Novikov, “Grain growth and control of microstructure and texture inpolycrystalline materials”. Publication from CRC Press Incoporation, 1997.
  • T.-J. King, J. P. McVittie, K. C. Saraswat and J. R. Pfiester, "Electricalproperties of heavily doped polycrystalline silicon-germanium films", ElectronDevices, IEEE Transactions on 41, 228 (1994).
  • T.-J. King and K. C. Saraswat, "Polycrystalline silicon-germanium thinfilmtransistors", Electron Devices, IEEE Transactions on 41, 1581 (1994).
  • T.-H. Kim, M.-K. Ryu and K.-B. Kim, "A Comparison of the Kinetics andthe Evolution of Microstructure of the Solid Phase Crystallized a-(Si0. 7Ge0. 3/Si)and a-(Si/Si0. 7Ge0. 3) Bilayer Films; Interface versus Surface Nucleated Films",Japanese journal of applied physics 37, L108 (1998).
  • T. Yonehara, H. I. Smith, C. Thompson and J. Palmer, "Graphoepitaxy of128Ge on SiO2 by solid?state surface?energy?driven grain growth", Applied PhysicsLetters 45, 631 (1984).
  • T. Sameshima, H. Watakabe, H. Kanno, T. Sadoh and M. Miyao, "Pulsed130laser crystallization of silicon?germanium films", Thin Solid Films 487, 67 (2005).
  • T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao, "Low-temperatureformation (≪ 500 C) of poly-Ge thin-film transistor with NiGe Schottkysource/drain", Applied physics letters 89, 192114 (2006).
  • T. Ohshima, T. Noguchi and H. Hayashi, "A super thin film transistor inadvanced poly Si films", Japanese journal of applied physics 25, L291 (1986).
  • T. Matsuyama, N. Terada, T. Baba, T. Sawada, S. Tsuge, K. Wakisaka andS. Tsuda, "High-quality polycrystalline silicon thin film prepared by a solid phasecrystallization method", Journal of Non-Crystalline Solids 198, 940 (1996).
  • T. Matsuyama, M. Tanaka, S. Tsuda, S. Nakano and Y. Kuwano,"Improvement of n-type poly-Si film properties by solid phase crystallizationmethod", Japanese journal of applied physics 32, 3720 (1993).
  • T. Matsuyama, K. Wakisaka, M. Kameda, M. Tanaka, T. Matsuoka, S.Tsuda, S. Nakano, Y. Kishi and Y. Kuwano, "Preparation of high-quality n-typepoly-Si films by the solid phase crystallization (SPC) method", Japanese journal ofapplied physics 29, 2327 (1990).125
  • T. Maeda, K. Ikeda, S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyamaand S. Takagi, "High mobility Ge-on-insulator p-channel MOSFETs using Ptgermanide Schottky source/drain", IEEE Electron Device Letters, 26, 102 (2005).
  • T. Kamins, M. Mandurah and K. Saraswat, "Structure and Stability of LowPressure Chemically Vapor?Deposited Silicon Films", Journal of TheElectrochemical Society 125, 927 (1978).
  • S.-M. Jung, J. Jang, W. Cho, H. Cho, J. Jeong, Y. Chang, J. Kim, Y. Rah, Y.Son and J. Park, “Three dimensionally stacked NAND flash memory technologyusing stacking single crystal Si layers on ILD and TANOS structure for beyond30nm node”, presented at the IEDM, 2006, pp. 1-4.
  • S.-H. Lim, S. Song, G.-D. Lee, E. Yoon and J.-H. Lee, "Facet evolution inselective epitaxial growth of Si by cold-wall ultrahigh vacuum chemical vapordeposition", Journal of Vacuum Science & Technology B 22, 682 (2004).
  • S.-H. Lim, D. W. Kim, T. Nakanishi, S. Yang, J.-Y. Ahn, H. Choi, K.Hwang, Y. Ko and C.-J. Kang, “Investigation of ultra thin polycrystalline siliconchannel for vertical NAND flash”, presented at the IRPS, 2011, pp.2E.4.1-2E.4.4.
  • S. Veprek, F.-A. Sarott and Z. Iqbal, "Effect of grain boundaries on theRaman spectra, optical absorption, and elastic light scattering in nanometer-sizedcrystalline silicon", Physical Review B 36, 3344 (1987).
  • S. Garrison, R. Cammarata, C. Thompson and H. I. Smith,"Surface?energy?driven grain growth during rapid thermal annealing (< 10 s) ofthin silicon films", Journal of applied physics 61, 1652 (1987).
  • S. D. Malhi, H. Shichijo, S. K. Banerjee, R. Sundaresan, M. Elahy, G.Pollack, W. Richardson, A. Shah, L. Hite and R. Womack, "Characteristics andthree-dimensional integration of MOSFET's in small-grain LPCVD polycrystallinesilicon", IEEE Journal of Solid-State Circuits, 20, 178 (1985).
  • S. B. Lee, D.-K. Choi and D. N. Lee, "Transmission electron microscopyobservations of Cu-induced directional crystallization of amorphous silicon",Journal of applied physics 98, 114911 (2005).
  • R. Sinclair, J. Morgiel, A. Kirtikar, I.-W. Wu and A. Chiang, "Directobservation of crystallization in silicon by in situ high-resolution electronmicroscopy", Ultramicroscopy 51, 41 (1993).
  • R. Puglisi, H. Tanabe, C. Chen and H. A. Atwater, "Large-grainedpolycrystalline Si films obtained by selective nucleation and solid phase epitaxy",Materials Science and Engineering: B 73, 212 (2000).
  • R. Katsumata, M. Kito, Y. Fukuzumi, M. Kido, H. Tanaka, Y. Komori, M.Ishiduki, J. Matsunami, T. Fujiwara and Y. Nagata, “Pipe-shaped BiCS flashmemory with 16 stacked layers and multi-level-cell operation for ultra high densitystorage devices”, presented at the VLSI Technology, 2009, pp. 136-137.
  • R. Iverson and R. Reif, "Recrystallization of amorphized polycrystallinesilicon films on SiO2: Temperature dependence of the crystallization parameters",Journal of applied physics 62, 1675 (1987).
  • R. Carluccio, J. Stoemenos, G. Fortunato, D. Meakin and M. Bianconi,"Microstructure of polycrystalline silicon films obtained by combined furnace andlaser annealing", Applied physics letters 66, 1394 (1995).
  • R. Anderson, "Microstructural analysis of evaporated and pyrolyticsilicon thin films", Journal of The Electrochemical Society 120, 1540 (1973).
  • P. Temple-Boyer, B. Rousset and E. Scheid, "Influences of deposition andcrystallization kinetics on the properties of silicon films deposited by low-pressurechemical vapour deposition from silane and disilane", Thin Solid Films 518, 6897129(2010).
  • P. Barna and M. Adamik, "Fundamental structure forming phenomena ofpolycrystalline films and the structure zone models", Thin Solid Films 317, 27(1998).
  • N. Yamauchi and R. Reif, "Polycrystalline silicon thin films processedwith silicon ion implantation and subsequent solid?phase crystallization: Theory,122experiments, and thin?film transistor applications", Journal of applied physics 75,3235 (1994).
  • N. Nagasima and N. Kubota, "Crystallization of amorphous Si filmsformed by chemical vapor deposition", Journal of Vacuum Science and Technology14, 54 (1977).
  • M.-K. Ryu, S.-M. Hwang, T.-H. Kim, K.-B. Kim and S.-H. Min, "Theeffect of surface nucleation on the evolution of crystalline microstructure duringsolid phase crystallization of amorphous Si films on SiO2", Applied physics letters71, 3063 (1997).
  • M.-K. Ryu, J.-W. Kim, T.-H. Kim, K.-B. Kim and C.-W. Hwang,"Reducing the Thermal Budget of Solid Phase Crystallization of Amorphous SiFilm Using Si0. 47Ge0. 53 Seed Layer", Japanese journal of applied physics 34, L1031(1995).
  • M. Dabney, M. van Hest, A. Mahan and D. Ginley, "Nucleation ratereduction through stress relief of thermally annealed hydrogenated amorphoussilicon films", Journal of Applied Physics 113, 173509 (2013).
  • M. Chou, M. L. Cohen and S. G. Louie, "Theoretical study of stackingfaults in silicon", Physical Review B 32, 7979 (1985).
  • L. Kimerling, H. Leamy and J. Patel, "The electrical properties ofstacking faults and precipitates in heat?treated dislocation?free Czochralskisilicon", Applied Physics Letters 30, 217 (1977).
  • L. Hultman, A. Robertsson, H. Hentzell, I. Engstrom and P. Psaras,"Crystallization of amorphous silicon during thin?film gold reaction", Journal ofapplied physics 62, 3647 (1987).
  • L. Haji, P. Joubert, J. Stoemenos and N. Economou, "Mode of growth andmicrostructure of polycrystalline silicon obtained by solid?phase crystallization ofan amorphous silicon film", Journal of applied physics 75, 3944 (1994).
  • J. Y. Seto, "The electrical properties of polycrystalline silicon films",Journal of Applied Physics 46, 5247 (1975).
  • J. Song and J. S. Im, “Nucleation And Growth Rates in IsothermalCrystallization Op Amorphous Si0.5Ge0.5 Films”, MRS Fall meeting Proceedings,124321, 307 (1993).
  • J. S. Im, H. Kim and M. O. Thompson, "Phase transformationmechanisms involved in excimer laser crystallization of amorphous silicon films",Applied Physics Letters 63, 1969 (1993).
  • J. Palmer, C. Thompson and H. I. Smith, "Grain growth and grain sizedistributions in thin germanium films", Journal of applied physics 62, 2492 (1987).
  • J. Levinson, F. Shepherd, P. Scanlon, W. Westwood, G. Este and M. Rider,"Conductivity behavior in polycrystalline semiconductor thin film transistors",Journal of Applied Physics 53, 1193 (1982).
  • J. Lasky, "Wafer bonding for silicon?on?insulator technologies", AppliedPhysics Letters 48, 78 (1986).127
  • J. Jang, H.-S. Kim, W. Cho, H. Cho, J. Kim, S. I. Shim, Y. Jang, J.-H.Jeong, B.-K. Son and D. W. Kim, “Vertical cell array using TCAT (Terabit CellArray Transistor) technology for ultra high density NAND flash memory”,presented at the 2009 Symposium on VLSI Technology, 2009, pp. 192-193.
  • J. C. Fan, B.-Y. Tsaur and M. Geis, "Graphite-strip-heater zone-meltingrecrystallization of Si films", Journal of Crystal Growth 63, 453 (1983).
  • J. A. Tsai, A. J. Tang, T. Noguchi and R. Reif, "Effects of Ge on Materialand Electrical Properties of Polycrystalline Si1? x Gex for Thin?Film Transistors",Journal of The Electrochemical Society 142, 3220 (1995).
  • H. Tanaka, M. Kido, K. Yahashi, M. Oomura, R. Katsumata, M. Kito, Y.Fukuzumi, M. Sato, Y. Nagata and Y. Matsuoka, “Bit cost scalable technology withpunch and plug process for ultra high density flash memory”, presented at theVLSI Technology, 2007, pp. 14-15.
  • H. S. Momose, T. Ohguro, E. Morifuji, H. Sugaya, S.-i. Nakamura and H.Iwai, "Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channellayer", Electron Devices, IEEE Transactions on 48, 1136 (2001).
  • H. S. Kim, “A Transmission Electron Microscopy Study of the CrystalGrowth of Si1-xGex Films Deposited on SiO2 by Molecular Beam Deposition”, Ph.D. Thesis, Korea Advanced Institute of Science and Technology, 1999.
  • H. S. Kim and J. Y. Lee, "Effect of twinning on the grain shape ofcrystallized amorphous Si0. 7Ge0. 3 thin films on SiO2", Applied physics letters 73,2739 (1998).
  • H. Leamy, “Laser fabrication of silicon on dielectric substrates”, MRSProceedings, 4, 459 (1981).
  • H. J. Kim and C. V. Thompson, "Compensation of grain growthenhancement in doped silicon films", Applied physics letters 48, 399 (1986).
  • H. J. Kim and C. Thompson, "The effects of dopants onsurface?energy?driven secondary grain growth in silicon films", Journal of AppliedPhysics 67, 757 (1990).
  • G. Radnoczi, A. Robertsson, H. Hentzell, S. Gong and M. A. Hasan, "Alinduced crystallization of a?Si", Journal of Applied physics 69, 6394 (1991).
  • G. Kartopu, A. Sapelkin, V. Karavanskii, U. Serincan and R. Turan,"Structural and optical properties of porous nanocrystalline Ge", Journal ofApplied Physics 103, 113518 (2008).
  • G. Harbeke, L. Krausbauer, E. Steigmeier, A. Widmer, H. Kappert and G.Neugebauer, "Growth and physical properties of LPCVD polycrystalline siliconfilms", Journal of the Electrochemical Society 131, 675 (1984).
  • G. Celler, M. Robinson, L. Trimble and D. Lischner, "Dielectricallyisolated thick Si films by lateral epitaxy from the melt", Journal of TheElectrochemical Society 132, 211 (1985).
  • G. Celler, "Laser crystallization of thin Si films on amorphous insulatingsubstrates", Journal of Crystal Growth 63, 429 (1983).
  • F. S. Johnson, D. S. Miles, D. T. Grider and J. Wortman, "Selectivechemical etching of polycrystalline SiGe alloys with respect to Si and SiO2",Journal of electronic materials 21, 805 (1992).
  • F. Edelman, Y. Komem, M. Bendayan and R. Beserman, "Initialcrystallization stage of amorphous germanium films", Journal of applied physics 72,5153 (1992).
  • F. Edelman, T. Raz, Y. Komem, P. Zaumseil, H.-J. Osten and M. Capitan,"Crystallization of amorphous Si0. 5 Ge0. 5 films studied by means of in-situ X-raydiffraction and in-situ transmission electron microscopy", Philosophical MagazineA 79, 2617 (1999).
  • E. Chartier, N. Szydlo, F. Boulitrop, N. Proust and J. MagariN O,“Dependence of A-Si: H Tfts Performances on Deposition and ProcessParameters”, MRS Fall meeting Proceedings, 53, 453 (1985).123
  • D.-H. Choi, K. Shimizu, O. Sugiura and M. Matsumura, "Drasticenlargement of grain size of excimer-laser-crystallized polysilicon films", Japanesejournal of applied physics 31, 4545 (1992).
  • C.-Y. Tsao, J. W. Weber, P. Campbell, P. I. Widenborg, D. Song and M. A.Green, "Low-temperature growth of polycrystalline Ge thin film on glass by in situdeposition and ex situ solid-phase crystallization for photovoltaic applications",Applied Surface Science 255, 7028 (2009).
  • C.-W. Chang, C.-K. Deng, C.-L. Chang, T.-C. Liao and T.-F. Lei, "High-Performance Solid-Phase Crystallized Polycrystalline Silicon Thin-FilmTransistors with Floating-Channel Structure", Japanese Journal of Applied Physics12647, 3024 (2008).
  • C. W. Hwang, M. K. Ryu, K. B. Kim, S. C. Lee and C. S. Kim, "Solidphase crystallization of amorphous Si1? xGex films deposited on SiO2 by molecularbeam epitaxy", Journal of applied physics 77, 3042 (1995).
  • C. Thompson, "Secondary grain growth in thin films of semiconductors:Theoretical aspects", Journal of applied physics 58, 763 (1985).
  • C. Thompson and H. I. Smith, "Surface?energy?driven secondary graingrowth in ultrathin (< 100 nm) films of silicon", Applied Physics Letters 44, 603(1984).
  • C. Spinella, S. Lombardo and F. Priolo, "Crystal grain nucleation inamorphous silicon", Journal of applied physics 84, 5383 (1998).
  • C. Hong, C. Park and H. J. Kim, "Structure and crystallization oflow?pressure chemical vapor deposited silicon films using Si2H6 gas", Journal ofapplied physics 71, 5427 (1992).
  • A. Sakai, H. Ono, K. Ishida, T. Niino and T. Tatsumi, "Crystallization ofamorphous silicon with clean surfaces", Japanese journal of applied physics 30,L941 (1991).
  • A. J. Walker, “3-D NAND Flash Strings, Non-Crystalline Channels,Surface Potentials and Vanishing String Currents”, Schiltron Corporation, 2011,Retrived on January 28, 2015 from http://www.schiltron.com/WhitePapers.html.
  • A. J. Walker, "Sub-50-nm dual-gate thin-film transistors for monolithic 3-D flash", Electron Devices, IEEE Transactions on 56, 2703 (2009).
  • A. Hokazono, K. Ohuchi, K. Miyano, I. Mizushima, Y. Tsunashima and Y.Toyoshima, “Source/drain engineering for sub-100 nm CMOS using selectiveepitaxial growth technique”, presented at the IEDM, 2000, pp. 243-246.
  • A. Gupta and P. K. Vasudev, "recent advances in hetero-epitaxial siliconon-insulator technology. 1", Solid State Technology 26, 104 (1983).