연구동향 분석
박사

Graphene-based Hybrid Nanostructures and their applications : 그래핀 기반 하이브리드 나노구조 연구 및 응용소자개발

이동현 2015년

논문상세정보
인용/피인용
' Graphene-based Hybrid Nanostructures and their applications : 그래핀 기반 하이브리드 나노구조 연구 및 응용소자개발' 의 주제별 논문영향력
논문영향력 선정 방법
논문영향력 요약
주제
  • graphene
  • hybrid nanostructure
  • nano devices
동일주제 총논문수 논문피인용 총횟수 주제별 논문영향력의 평균
469 0

0.0%

' Graphene-based Hybrid Nanostructures and their applications : 그래핀 기반 하이브리드 나노구조 연구 및 응용소자개발' 의 참고문헌

  • [15 ] Z. H. Ni, H. M. Wang, J. Kasim, H. M. Fan, T. Yu, Y. H. Wu, Y. P. Feng, andZ. X. Shen. Graphene Thickness Determination Using Reflection andContrast Spectroscopy ?, Nano Lett., 7, 2758-2763, 2007
  • Zhou, S. Y.; Gweon, G.-H.; Fedorov, A. V.; First, P. N.; De Heer, W. A.;Lee, D.-H.; Guinea, F.; Castro, A. H.; Lanzara, A. Substrate-InducedBandgap Opening in Epitaxial Graphene. Nat. Mater. 2007, 6, 770?775.
  • Zhang, Y. B.; Tan, Y. W.; Stormer, H. L.; Kim, P., Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene. Nature, 2005, 438, 201-204.
  • Z. Yan, L. Ma, Y. Zhu, I. Lahiri, M. G. Hahm, Z. Liu, S. Yang, C. Xiang, W.Lu, Z. Peng, Z. Sun, C. Kittrell, J. Lou, W. Choi, P. M. Ajayan, and J. M.Tour, Three-Dimensional Metal-Graphene-Nanotube MultifunctionalHybrid Materials ?, 7, 58-94, 2013.
  • Z. Chen, W. Ren, L. Gao, B. Liu, S. Pei, H.-M. Cheng, Nat. Mater. 2011,10, 424-428.
  • Z. Chen, C. Xu, C. Ma, W. Ren, H.-M. Cheng, Adv. Mater. 2013, 25, 1296-1300.
  • Yi, J.; Lee, J. M.; Park, W. I. Vertically-aligned ZnO nanorods andINTRODUCTIONgraphene hybrid architectures for high-sensitive flexible gas sensors Sensors and Actuators B: Chemical, 2011, 155, 264?269.
  • Yang, H. Y.; Son, D. I.; Kim, T. W.; Lee, J. M.; Park, W. I. Enhancementof the photocurrent in ultraviolet photodetectors fabricated utilizing hybridINTRODUCTIONpolymer-ZnO quantum dot nanocomposites due to an embedded graphenelayer, Organic Electronics, 2010, 11, 1313?1317.
  • Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A.Grill, Ph. Avouris, 100-GHz Transistors from Wafer-Scale EpitaxialGraphene ?, Science 327, 662, 2010.
  • Y.-H. Chang, C.-T. Lin, T.-Y. Chen, C.-L. Hsu, Y.-H. Lee, W. Zhang, K.-H. Wei, L.-J. Li, Adv. Mater. 2013, 25, 756-760.
  • Y. Zhu, S. Murali, W. Cai, X. Li, J. W. Suk, J. R. Potts, R. S. Ruoff, Adv.Mater. 2010, 22, 3906-3924.
  • Y. Zhang, Y. ?W. Tan, H. L. Stormer, and P. Kim, Experimental observationof the quantum Hall effect and Berry ?s phase in graphene ?, Nat., 438, 201-204, 2005.
  • X.-C. Dong, H. Xu, X.-W. Wang, Y.-X. Huang, M. B. C.Park, H. Zhang, L.-H. Wang, W. Huang, and P. Chen, 3D Graphene-Cobalt Oxide Electrodefor High-Performance Supercapacitor and Enzymeless Glucose Detection ?,ACS Nano, 6, 3206-3213, 2012.
  • X. Wang, L. Zhi, K. Mullen, Nano Lett. 2007, 8, 323-327.
  • X. Lu, M. Yu, H. Huang, and R. S. Ruoff, Tailoring graphite with the goalof achieving single sheets ?, Nanotechnology, 10, 269?272, 1999.
  • X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L.Colombo, and R. S. Ruoff, Transfer of Large-Area Graphene FilmsforHigh-Performance Transparent Conductive Electrodes ?, Nano Lett., 9,4359-4363, 2009
  • X. Li, W. Cai, L. Colombo, and R. S. Ruoff, Evolution of Graphene Growthon Ni and Cu by Carbon Isotope Labeling ?, Nano Lett., 9, 12, 2009.
  • X. Li, W. Cai, L. Colombo, R. S. Ruoff, Nano Lett., 2009, 9, 4268-4272.
  • X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I.Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R. S. Ruoff, Large-AreaSynthesis of High-Quality and Uniform Graphene Films on Copper Foils ?,Science, 324, 1312-1314, 2009.
  • X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R. S. Ruoff, Science 2009, 324, 1312-1314.
  • Weng, X.; Rez, P.; Batson, P.E. Single Electron Calculations for the Si L2,3 NearEdge Structure. Solid State Commun. 1990, 74, 1013?1015.CHAPTER 5
  • Wang, Y.; Shao, Y.; Matson, D. W.; Li, J.; Lin, Y. Nitrogen-DopedGraphene and Its Application in Electrochemical Biosensing. ACS Nano2010, 4, 1790?1798.
  • Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. HighlyPolarized Photoluminescence and Photo detection from Single Indium PhosphideNanowires Science 2001, 293, 1455-1457.
  • Wang, H.; Cui, L. -F.; Yang, Y.; Casalongue, H. S.; Robinson, J. T.; Liang,Y.; Cui, Y.; Dai, H. Mn3O4-Graphene Hybrid as a High-Capacity AnodeMaterial for Lithium Ion Batteries, J. Am. Chem. Soc, 2010, 132, 13978?13980.
  • Walther, T.; England, J. Investigation of Boron Implantation Into Silicon byQuantitative Energy-Filtered Transmission Electron Microscopy. J. Phys.:Conf. Ser. 2011, 326, 012053.
  • Wallace, P. R. The Band Theory of Graphite. Phys. Rev. 1947, 71, 622-634.
  • Vincent C. Tung, Li-Min Chen, Matthew J. Allen, Jonathan K. Wassei, KurtNelson, Richard B. Kaner, and Yang Yang. Low-Temperature SolutionProcessing of Graphene-Carbon Nanotube Hybrid Materials for High-Performance Transparent Conductors ?, Nano Lett., 9, 1949-1955, 2009
  • Trauzettel, B.; Bulaev, D. V.; Loss, D.; Burkard, G. Spin Qubits in GrapheneQuantum Dots. Nat. Phys. 2007, 3, 192?196.
  • Terrones, H.; Lv, R.; Terrones, M.; Dresselhaus, M. S. The Role of Defects andDoping in 2D Graphene Sheets and 1D Nanoribbons. Rep. Prog. Phys. 2012,75, 062501.
  • Telling, R. H.; Heggie, M. I. Radiation Defects in Graphite. Philos. Mag. 2007,87, 4797?4846.
  • Someya, T. Optics: Electronic eyeballs. Nature 2008, 454, 703.
  • S. S. Datta, D. R. Strachan, E. J. Mele, and A. T. Charlie Johnson, SurfacePotentials and Layer Charge Distributions in Few-Layer Graphene Films ?,Nano Lett., 9, 7-11, 2009.
  • S. K. Bae, H. K. Kim, Y. B. Lee, X. F. Xu, J. S. Park, Y. Zheng, J. k.Balakrishnan, T. Lei, H. R Kim, Y. I. Song, Y. J. Kim, K. S. Kim, B. O.zyilmaz, J. H. Ahn, B. H. Hong, and S. Iijima, Roll-to-roll production of30-inch graphene films for transparent electrodes ?, Nat. Nanotechnol., 5,574-578, 2010.
  • S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, Y. Zheng, J. Balakrishnan, T. Lei,H. Ri Kim, Y. I. Song, Y.-J. Kim, K. S. Kim, B. Ozyilmaz, J.-H. Ahn, B. H.Hong, S. Iijima, Nat. Nanotechnol. 2010, 5, 574-578.
  • Rutter, G. M.; Crain, J. N.; Guisinger, N. P.; Li, T.; First, P. N.; Stroscio, J. A.Scattering and Interference in Epitaxial Graphene. Science 2007, 317, 219?222.
  • Roy G. Gordon, Criteria for Choosing Transparent Conductors ?, MRSbulletin, 52, 2000.
  • Reich, S.; Maultzsch, J.; Thomsen, C.; Ordejon, P. Tight-Binding Descriptionof Graphene. Phys. Rev. B 2002, 66, 035412.
  • R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T.Stauber, N. M. R. Peres, A. K. Geim, Fine Structure ConstantDefinesVisual Transparency of Graphene ?, Science., 320, 1308, 2008.
  • R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres, A. K. Geim, Science 2008, 320, 1308.
  • R. J. Good, L. A. Girifalco, J. Phy. Chem. 1960, 64, 561-565.CHAPTER 4
  • Q. Yu, J. Lian, S. Siriponglert, H. Li, Y. P. Chen, and S. ?S. Pei, GrapheneLITERATURE REVIEWsegregated on Ni surfaces and transferred to insulators ?, Appl. Phys. Lett.,93, 113103, 2008.
  • Q. H. Wang, Z. Jin, K. K. Kim, A. J. Hilmer, G. L. C. Paulus, C.-J. Shih,M.-H. Ham, J. D. Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, J. Kong,P. Jarillo-Herrero, M. S. Strano, Nat. Chem. 2012, 4, 724-732.
  • Pisana, S.; Lazzeri, M.; Casiraghi, C.; Novoselov, K. S.; Geim, A. K.; Ferrari,A. C.; Mauri, F. Breakdown of the Adiabatic Born?OppenheimerApproximation in Graphene. Nat. Mater. 2007, 6, 198?201.
  • Pippel, E.; Lichtenberger, O.; Woltersdorf, J. Identification of SiliconOxycarbide Bonding in Si-C-O-Glasses by EELS. J. Mater. Sci. Lett. 2000, 19,2059?2060.
  • Patolsky, F.; Zheng, G.; Lieber, C. M. Fabrication of silicon nanowiredevices forultrasensitive, label-free, real-time detection of biological and chemicalspecies. Nat. Protoc. 2006, 1, 1711-1724.
  • Partoens, B.; Peeters, F. M. From Graphene to Graphite: Electronic StructureAround the K Point. Phy. Rev. B 2006, 74, 075404.
  • P.R. Wallace, The band theory of graphite ?, Phys. Rev., 71, 622-634, 1947.
  • P. W. Sutter, J. -I. Flege, and E. A. Sutter, Epitaxial graphene on ruthenium ?,Nat. Mater., 7, 406-411, 2008.
  • P. R. F. Barnes, K. Miettunen, X. Li, A. Y. Anderson, T. Bessho, M. Gratzel,B. C. O'Regan, Adv. Mater. 2013, 25, 1881-1922.
  • P. Matyba, H. Yamaguchi, G. Eda, M. Chhowalla, L. Edman, N. D.Robinson, ACS Nano 2010, 4, 637-642.
  • P. K. Ang, S. Wang, Q. Bao, J. T. L. Thong, and K. P. Loh, High-Throughput Synthesis of Graphene by Intercalation-Exfoliation of GraphiteOxide and Study of Ionic Screening in Graphene Transistor ?, Acs Nano. 3,3587?3594, 2009.
  • P. Avouris, Z. Chen, and V. Perebeinos, Carbon-based electronics ?, Nat.LITERATURE REVIEWNanotechnol., 2, 605-615, 2007.
  • Oubre, C.; Nordlander P. Optical Properties of Metall- odielectricNanostructures Calculated Using the Finite Difference Time Domain Method. J.Phys. Chem. B 2004, 108, 17740-17747.
  • Ohta, T.; Bostwick, A.; Seyller, T.; Horn, K.; Rotenberg, E., Controlling the Electronic Structure of Bilayer Graphene. Science, 2006, 313, 951-954.
  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A., Two-Dimensional Gas of Massless Dirac Fermions in Graphene. Nature, 2005, 438, 197-200.
  • Nomura, K.; Ohta, H.; Ueda, K.; Kamiya, T.; Hirano, M.; Hosono, H. Thin-Film Transistor Fabricated in Single- Crystalline Transparent Oxide Semiconductor.Science 2003, 300, 1269-1272.
  • Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H., Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors UsingAmorphous Oxide Semiconductors. Nature 2004, 432, 488-492.
  • Ni, Z. H.; Chen, W.; Fan, X. F.; Kuo, J. L.; Yu, T.; Wee, A. T. S.; Shen, Z. X.Raman Spectroscopy of Epitaxial Graphene on a SiC Substrate . Phys. Rev. B2008, 77, 115416.
  • Nakada, K.; Fujita, M.; Dresselhaus, G.; Dresselhaus, M. S. Edge State inGraphene Ribbons: Nanometer Size Effect and Edge Shape Dependence. Phys.Rev. B 1996, 54, 17954?17961.
  • N. Yang, J. Zhai, D. Wang, Y. Chen, and L. Jiang, Two-DimensionalGraphene Bridges Enhanced Photoinduced Charge Transport in Dye-Sensitized Solar Cells ?, ACS Nano, 4, 887-894, 2010.
  • N. Yang, J. Zhai, D. Wang, Y. Chen, L. Jiang, ACS Nano 2010, 4, 887-894.
  • N. D. Abazovi?, M. I. ?omor, M. D. Drami?anin, D. J. Jovanovi?, S. P.Ahrenkiel, J. M. Nedeljkovi?, J. Phy. Chem. B 2006, 110, 25366-25370.
  • Morozov, S. V.; Novoselov, K. S.; Katsnelson, M. I.; Schedin, F.; Elias, D. C.; Jaszczak, J. A.; Geim, A. K. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. Phys. Rev. Lett. 2008, 100, 016602.
  • Mallet, P.; Varchon, F.; Naud, C.; Magaud, L.; Berger, C.; Veuillen, J.-Y.Electron States of Mono- and Bilayer Graphene on SiC Probed by STM. Phys.CHAPTER 5Rev. B 2007, 76, 041403.
  • M.-Y. Yen, M.-C. Hsiao, S.-H. Liao, P.-I. Liu, H.-M. Tsai, C.-C. M. Ma,N.-W. Pu, M.-D. Ger, Carbon 2011, 49, 3597-3606.CHAPTER 4
  • M. Poot, H. S. J. Van Der Zant, Nanomechanical properties of few-layergraphene membranes ?, Appl. Phys. Lett., 92, 063111, 2008.
  • M. A. Bissett, M. Tsuji, H. Ago, J. Phy. Chem. C 2013, 117, 3152-3159.
  • Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.;Grill, A.; Ph. Avouris. 100-GHz Transistors from Wafer-Scale EpitaxialGraphene. Science 2010, 327, 662.
  • Li, X.; Zhu, Y.; Cai, W.; Borysiak, M.; Han, B.; Chen, D.; Piner, R. D.;Colombo, L.; Ruoff, R. S. Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes. Nano Lett. 2009, 9, 4359?4363.CHAPTER 5
  • Li, X.; Zhu, Y.; Cai, W.; Borysiak, M.; Han, B.; Chen, D.; Piner, R. D.; Colombo, L.; Ruoff, R. S., Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes. Nano Lett., 2009, 9, 4359-4363.
  • Li, X.; Cai, W.; An, J.; Kim, S. Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.;Jung, I.; Tutuc, E.; et al. Large-Area Synthesis of High-Quality and UniformGraphene Films on Copper Foils. Science 2009, 324, 1312?1314.
  • Lee, J. M.; Pyun, Y. B.; Yi, J.; Choung, J. W.; Park, W. I. ZnO Nanorod-Graphene Hybrid Architectures for MultifunctionalmConductors. J. Phys.Chem. C, 2009, 113, 19134?19138.
  • Lee, C.; Wei, X.; Kysar, J. W.; Hone, J., Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene. Science, 2008, 321, 385-388.
  • Landau, L. D.; Lifshitz, E. M.; Pitaevskii, L. P. Electrodynamics of ContinuousMedia; Pergamon/ Oxford; England, 1984.
  • L. Liao et al. High-?? oxide nanoribbons as gate dielectrics for high mobilitytop gated graphene transistors. Proc. Natl Acad. Sci. 107, 6711?6715 2010.
  • L. Kavan, J.-H. Yum, M. Gratzel, Nano Lett. 2011, 11, 5501-5506.
  • L. Jiao, L. Zhang, X. Wang, G. Diankov, and H. Dai, Narrow graphenenanoribbons from carbon nanotubes ?, Nat., 458, 877-880, 2009.LITERATURE REVIEW
  • Kongkanand, A.; Martinez-Dominguez, R.; Kamat, P. V. Single WallINTRODUCTIONCarbon Nanotube Scaffolds for Photoelectrochemical Solar Cells. Captureand Transport of Photogenerated Electrons. Nano Lett. 2007, 7, 676?680.
  • Kim, Y.-J.; Lee, J. H.; Yi, G.-C. Vertically Aligned ZnO NanostructuresGrown on Graphene Layers. Appl. Phys. Lett. 2009, 95, 213101.
  • Kim, H.; Horwiz, J. S.; Kushto, G. P.; Kafafi, Z. H.; Chrisey, D. B. Indiumtin oxide thin films grown on flexible plastic substrates by pulsed-laser depositionfor organic light-emitting diodes. Appl. Phys. Lett. 2001, 79, 284.
  • K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva & A.A. Firsov, Electric Field Effect in Atomically Thin Carbon Films, Science, 306, 666-669, 2004.
  • K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I.V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Two-dimensional gas ofmassless Dirac fermions in grapheme ?, Nat., 438, 197-200, 2005.
  • K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. ?H. Ahn, P.Kim, J. ?Y. Choi, and B. H. Hong, Large-scale pattern growth of graphenefilms for stretchable transparent electrodes ?, Nat., 457, 706-710, 2009.
  • Ju, S.; Facchetti, A.; Xuan, Y.; Liu, J.; Ishikawa, F.; Ye, P.; Zhou, C.; Marks,T. J.; Janes, D. B. Fabrication of fully transparent nanowire transistors fortransparent and flexible electronics. Nat. Nanotech. 2007, 2, 378-384.
  • Javey, A.; Nam, S.-W.; Friedman, R. S.; Yan, H.; Lieber, C. M. Layer-by-Layer Assembly of Nanowires for Three-Dimensional, Multifunctional Electronics.Nano Lett. 2007, 7, 773-777.
  • J.H. Chen, C. Jang, S. XIAO, M. ISHIGAMI, and M. S. FUHRER, Intrinsicand extrinsic performance limits ?, 3, 206-209,2008
  • J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, Nat. Nanotechnol. 2008, 3, 206-209.
  • J. Liu, H. Bai, Y. Wang, Z. Liu, X. Zhang, D. D. Sun, Adv. Fucn. Mater.2010, 20, 4175-4181.
  • J. Hass, F. Varchon, J. E. Millan-Otoya, M. Sprinkle, N. Sharma, W. A. deHeer, C. Berger, P. N. First, L. Magaud, and E. H. Conrad, Why MultilayerGraphene on 4H-SiC(0001) Behaves Like a Single Sheet of Graphene ?, PRL,100, 125504, 2008.
  • J. Coraux, A. T. NDiaye, C. Busse, and T. Michely, Structural Coherencyof Graphene on Ir(111) ?, Nano Lett., 8, 565-570, 2008.
  • J. -Y. Lee, S. T. Connor, Y. Cui, and P. Peumans, Solution-Processed MetalNanowire Mesh Transparent Electrodes ?, Nano Lett., 8, 2, 2008.
  • Izaki, M.; Omi, T. Transparent zinc oxide films prepared byelectrochemical reaction. Appl. Phys. Lett. 1996, 68, 2439.
  • Ishikawa, F. N.; Chang, H. K.; Ryu, K.; Chen, P.; Badmaev, A.; De ArcoAPPENDIXGomez, L.; Z.Shen, G.; Zhou, C. Transparent Electronics Based on Transfer PrintedAligned Carbon Nanotubes on Rigid and Flexible Substrates. ACS Nano 2008, 3,73-79.
  • I. W. Frank , D. M. Tanenbaum , A. M. Van Der Zande , P. L. McEuen, Mechanical properties of suspended graphene sheets ?, J. Vac. Sci. Technol.B, 25, 2558, 2007.LITERATURE REVIEW
  • Hong, Y. J.; Lee, W. H.; Wu, Y.; Ruoff, R. S.; Fukui, T. van der Waals Epitaxyof InAs Nanowires Vertically Aligned on Single-Layer Graphene. Nano Lett.2012, 12, 1431?1436.
  • Hong, Y. J.; Fukui, T. Controlled van der Waals Heteroepitaxy of InAsNanowires on Carbon Honeycomb Lattices, ACS Nano, 2011, 5 7576?7584.
  • H. Y. Yang, D. I. Son, T. W. Kim, J. M. Lee, W. I. Park, Enhancement ofthe photocurrent in ultraviolet photodetectors fabricated utilizing hybridpolymer-ZnO quantum dot nanocomposites due to an embedded graphenelayer ?, Organic Electronics, 11, 1313?1317, 2010.
  • H. Wang, L. -F. Cui, Y. Yang, H. S. Casalongue, J. T. Robinson, Y. Liang, Y.Cui, and H. Dai, Mn3O4-Graphene Hybrid as a High-Capacity AnodeMaterial for Lithium Ion Batteries ?, J. Am. Chem. Soc, 132, 13978?13980,2010.LITERATURE REVIEW
  • H. W. Tien, Y. L. Huang, S. Y. Yang, J. Y. Wang, C. C. M. Ma, Carbon2011, 49, 1550-1560.
  • H. Ueta, M. Saida, C. Nakai, Y. Yamada, M. Sasaki, S. Yamamoto, Highlyoriented monolayer graphite formation on Pt(1 1 1) by a supersonic methanebeam ?, Surf Sci, 560, 183?190, 2004.
  • Guo, B.; Liu, Q.; Chen, E.; Zhu, H.; Fang, L.; Gong, J. R. Controllable NDopingof Graphene. Nano Lett. 2010, 10, 4975?4980.
  • Futaba, D. N.; Hata, K.; Yamada, T.; Hiraoka, T.; Hayamizu, Y.; Kakudate,Y.; Tanaike, O.; Hatori, H.; Yumura, M.; Iijima, S. Nat. Mater. 2006, 5,987?994.
  • F. M. Koehler, A. Jacobsen, K. Ensslin, C. Stampfer, W. J. Stark, Small2010, 6, 1125-1130.
  • F. Fabregat-Santiago, J. Bisquert, E. Palomares, L. Otero, D. Kuang, S. M.Zakeeruddin, M. Gratzel, J. Phy. Chem. C 2007, 111, 6550-6560.
  • Elias, D. C.; Nair1, R. R.; Mohiuddin, T. M. G.; Morozov, S. V.; Blake, P.M.; Halsall, P.; Ferrari, A. C.; Boukhvalov, D. W.; Katsnelson, M. I.; Geim,A. K.; et al. Control of Graphene ?s Properties by ReversibleHydrogenation: Evidence for Graphane. Science 2009, 323, 610?613.
  • Elias, D. C.; Nair1, R. R.; Mohiuddin, T. M. G.; Morozov, S. V.; Blake, P. M.;Halsall, P.; Ferrari, A. C.; Boukhvalov, D. W.; Katsnelson, M. I.; Geim, A. K.;CHAPTER 5et al. Control of Graphene ?s Properties by Reversible Hydrogenation: Evidencefor Graphane. Science 2009, 323, 610?613.
  • E. Polikarpov, J. S. Swensen, N. Chopra, F. So, and A. B. Padmaperuma, An ambipolar phosphine oxide-based host for high power efficiency bluephosphorescent organic light emitting devices ?, Appl. Phys. Lett., 94,223304, 2009.
  • Duan, X.; Niu, C.; Sahi, V.; Chen, J.; Parce, J. W.; Empedocles, S.;Goldman, J. L. High-performance thin- film transistors using semiconductornanowires and nanoribbons. Nature 2003, 425, 274-278.
  • Dattoli, E. N.; Wan, Q.; Guo, W.; Chen, Y.; Pan, X.; Lu, W. FullyTransparent Thin-Film Transistor Devices Based on SnO2 Nanowires. Nano Lett.2007, 7, 2463-2469.
  • Dang, W.; Peng, H.; Li, H.; Wang, P.; Liu, Z. Epitaxial Heterostructures ofUltrathin Topological Insulator Nanoplate and Graphene. Nano Lett. 2010,10, 2870?2876.
  • D. Zhang, K. Ryu, X. Liu, E. Polikarpov, J. Ly, M. E. Tompson, and C. Zhou, Transparent, Conductive, and Flexible Carbon Nanotube Films and TheirApplication in Organic Light-Emitting Diodes ?, Nano Lett., 6, 1880-1886,2006.
  • D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii, J. R. Lomeda, A. Dimiev,LITERATURE REVIEW Longitudinal unzipping of carbon nanotubes to form graphenenanoribbons ?, Nat., 458, 872, 2009.
  • D. Pasero, N. Reeves, A. R. West, Co-doped Mn3O4: a possible anodematerial for lithium batteries ?, J. power sources, 141, 156?158, 2005.
  • D. Errandonea, Can metals be a liquid glass? ?, Nat. Mater., 8, 170-171,2009.
  • Ci, L.; Song, L.; Jin, C.; Jariwala, D.; Wu, D.; Li, Y.; Srivastava, A.; Wang,Z. F.; Storr, K.; Balicas, L. Atomic Layers of Hybridized Boron Nitrideand Graphene Domains. Nat. Mater. 2010, 9, 430?435.
  • Ci, L.; Song, L.; Jin, C.; Jariwala, D.; Wu, D.; Li, Y.; Srivastava, A.; Wang, Z.F.; Storr, K.; Balicas, L.; et al. Atomic Layers of Hybridized Boron Nitride andGraphene Domains. Nat. Mater. 2010, 9, 430?435.
  • Chu, P. K.; Li, L. Characterization of Amorphous and Nanocrystalline CarbonFilms. Mater. Chem. Phys. 2006, 96, 253?277.
  • Choi, W. M.; Shin, K.-S.; Lee, H. S.; Choi, D.; Kim, K.; Shin, H.-J.; Yoon,S.-M.; Choi, J.-Y.; Kim, S.-W. Selective Growth of ZnO Nanorods onSiO2/Si Substrates Using a Graphene Buffer Layer. Nano Res. 2011, 4,440?447.
  • Chen, J.-H.; Jang, C.; Xiao, S.; Ishigami, M.; Fuhrer, M. S. Intrinsic andExtrinsic Performance Limits of Graphene Devices on SiO2. Nat. Nanotechnol.2008, 3, 206?209.
  • C. Lee, X. Wei, J. W. Kysar, J. Hone, Science 2008, 321, 385-388.
  • Brey, L.; Fertig, H. A. Phys. Rev. B Electronic States of Graphene NanoribbonsStudied with the Dirac Equation. 2006, 73, 235411.
  • Berger, S. D.; McKenzie, D. R.; Martin, P. J. EELS Analysis of Vacuum Arc-Deposited Diamond-Like Films. Philos. Mag. Lett. 1988, 57, 285?290.
  • Barros, E. B.; Demir, N. S.; Souza Filho, A. G.; Filho, J. M.; Jorio, A.;Dresselhaus, G.; Dresselhaus, M. S. Raman Spectroscopy of Graphitic Foams.Phys. Rev. B 2005, 71, 165422.
  • Balandin, A. A.; Ghosh, S.; Bao, W.; Calizo, I.; Teweldebrhan, D.; Miao, F.; Lau, C. N.Superior thermal conductivity of single-layer graphene. Nano Lett. 2008, 8, 902-907.
  • Bai, J.; Zhong, X.; Jiang, S.; Huang, Y.; Duan, X., Graphene nanomesh. Nat. Nanotechnol. 2010, 5, 190-194.
  • Bae, S. K.; Kim, H. K.; Lee, Y. B.; Xu, X. F.; Park, J. S.; Zheng, Y.;Balakrishnan, J. K.; Lei, T.; Kim, H. R.; Song, Y. I.; et al. Roll-to-RollProduction of 30-Inch Graphene Films for Transparent Electrodes. Nat.Nanotechnol. 2010, 5, 574?578.
  • B. Tang, G. Hu, J. Power Sources 2012, 220, 95-102.
  • B. O'Regan, M. Gratzel, Nature 1991, 353, 737-740.CHAPTER 4[17] M. Law, L. E. Greene, J. C. Johnson, R. Saykally, P. Yang, Nat. Mater. 2005,4, 455-459.
  • B. G. Choi, M. Yang, W. H. Hong, J. W. Choi, Y. S. Huh, ACS Nano 2012,6, 4020-4028.
  • Artukovic, E.; Kaempgen, M.; Hecht, D. S.; Roth, S.; Gruner, G. Transparent and Flexible Carbon Nanotube Transistors. Nano Lett. 2005, 5, 757-760.
  • A. Yu, P. Ramesh, M. E. Itkis, E. Bekyarova, and R. C. Haddon, GraphiteNanoplatelet-Epoxy Composite Thermal Interface Materials ?, J. Phys.Chem. C, 111, 21, 2007
  • A. Varykhalov, and O. Rader, Graphene grown on Co(0001) films andislands: Electronic structure and its precise magnetization dependence ?,Phys. Rev. B, 80, 035437, 2009.
  • A. Patra, Y. H. Wijsboom, S. S. Zade, M. Li, Y. Sheynin, G. Leitus, and M.LITERATURE REVIEWBendikov, Poly(3,4-ethylenedioxyselenophene) ?, J. Am. Chem. Soc, 130,6734?6736, 2008.
  • A. K. Geim, and K. S. Novoselov, The rise of graphene, Nat. Mater. 6, 183?191 (2007).
  • A. Hagfeldt, G. Boschloo, L. Sun, L. Kloo, H. Pettersson, Chem. Rev. 2010,110, 6595-6663.
  • A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, The electronic properties of graphene ?, Rev. Mod. Phys., 81, 109, 2009.
  • A. G. Cano-Marquez, F. J. Rodriguez-Mac??as, J. Campos-Delgado, C. G.Espinosa-Gonzalez, F. Tristan-Lopez, D. Ramirez-Gonzalez, D. A. Cullen,D. J. Smith, M. Terrones, and Y. I. Vega-Cantu, Ex-MWNTs: GrapheneSheets and Ribbons Produced by Lithium Intercalation and Exfoliation ofCarbon Nanotubes ?, Nano Lett., 9, 1527, 2009.
  • A. Fasolino, J. H. Los, and M. I. Katsnelson, Intrinsic ripples in graphene ?,Nat. Mater., 6 , 858-861, 2007.
  • A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S.Piscanec, D. Jiang, K. S. Novoselov, S. Roth, A. K. Geim, Phy. Rev. Lett., 2006, 97,187401.