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Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors
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Gwan Min Yoo
Young Jun Yoon
Young Jae Kim
Sung Yoon Kim
Seongjae Cho
Jungjoon Kim
Jung-Hee Lee
Jae Hwa Seo
In Man Kang
Hye Su Kang
Hye Rim Eun
대한전자공학회[2014]
Google Scholar네이버 전문정보
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Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope
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In Man Kang
Young Jun Yoon
Sung Yoon Kim
Seongjae Cho
Jung-Hee Lee
Jin-Su Kim
Jae Hwa Seo
대한전기학회[2015]
Google Scholar네이버 전문정보
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Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor
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Hye Rim Eun
Young Jun Yoon
Young In Jang
Ra Hee Kwon
Jung-Hee Lee
Jae Hwa Seo
In Man Kang
Hyuck-In Kwon
대한전자공학회[2015]
Google Scholar네이버 전문정보
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Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications
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Hyuck-In Kwon
Young Jun Yoon
Seongjae Cho
Jung-Hee Lee
Jae Hwa Seo
In Man Kang
대한전자공학회[2016]
Google Scholar네이버 전문정보
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Design and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure
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Bo Gyeong Kim
Young Jun Yoon
Young In Jang
Sang Hyuk Lee
Ra Hee Kwon
Min Su Cho
Jung-Hee Lee
Jae Hwa Seo
In Man Kang
Gwan Min Yoo
대한전자공학회[2017]
Google Scholar네이버 전문정보
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